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RGW60TK65DGVC11

ROHM

RGW60TK65DGVC11 by ROHM

ROHM RGW60TK65DGVC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 33A max collector current. It has a built-in diode, 209ns turn-off time, and 50ns turn-on time. Ideal for power control applications requiring isolated case connection in a flange mount package style.

Median Price

$4.210

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 16 parts In-Stock

1+ parts

$2.390

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$2.390

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Chip1Stop

Japan . 30 parts In-Stock

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$4.120

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$4.120

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Mouser Electronics

USA . 450 parts In-Stock

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$4.300

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$3.030

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$2.970

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450

$4.300

$3.030

$2.970

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DigiKey

USA . 410 parts In-Stock

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$5.030

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$2.976

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410

$5.030

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Element14

Singapore . 16 parts In-Stock

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$6.871

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$4.588

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$4.410

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16

$6.871

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Verical

USA . 30 parts In-Stock

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$3.950

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$3.950

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Semtec, LLC

USA . 30 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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CoreStaff

Japan . 20 parts In-Stock

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$5.687

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$2.162

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20

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Microchip USA

USA . 5,049 parts In-Stock

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$18.732

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5,049

$18.732

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QUARKTWIN TECHNOLOGY LTD

USA . 23,874 parts In-Stock

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23,874

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Overview

Experience the ultimate power control with the RGW60TK65DGVC11 by ROHM, a top-of-the-line Insulated Gate Bipolar Transistor (IGBT) designed for optimal performance. With a maximum collector-emitter voltage of 650V and a nominal turn off time of just 209ns, this single-channel transistor is perfect for a wide range of applications requiring precise power regulation. Trust in ROHM's reputation for quality and innovation, and take advantage of the value and benefits that this product offers to customers seeking superior performance and reliability in their electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and electrical insulation, enhancing the durability and reliability of the product.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have lower conduction losses and higher efficiency compared to P-channel IGBTs.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for better control of switching and protection against reverse current flow.

Transistor Application: POWER CONTROL

Designed for power control applications, ensuring stable and precise performance in power management systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, ideal for industrial applications.

Maximum Collector-Emitter Voltage: 650 V

Can handle high voltages, suitable for power electronics and high voltage applications.

Maximum Collector Current (IC): 33 A

High collector current rating allows for efficient handling of large currents, making it suitable for power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGW60TK65DGVC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

209 ns

Nominal Turn On Time (ton):

50 ns

Trade Compliance

RGW60TK65DGVC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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