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RGT50TM65DGC9

ROHM

RGT50TM65DGC9 by ROHM

ROHM's RGT50TM65DGC9 is an N-CHANNEL IGBT with 650V VCE, 21A IC, and 65ns ton. Ideal for POWER CONTROL applications due to its single configuration with built-in diode and fast turn-off time of 210ns. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

Median Price

$4.085

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 40 parts In-Stock

1+ parts

$2.560

100+ parts

$1.660

1k+ parts

$1.250

10k+ parts

-

40

$2.560

$1.660

$1.250

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Element14

Singapore . 40 parts In-Stock

1+ parts

$3.900

100+ parts

$3.110

1k+ parts

$2.890

10k+ parts

-

40

$3.900

$3.110

$2.890

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Chip1Stop

Japan . 937 parts In-Stock

1+ parts

$4.270

100+ parts

$1.870

1k+ parts

$1.430

10k+ parts

$1.400

937

$4.270

$1.870

$1.430

$1.400

Mouser Electronics

USA . 963 parts In-Stock

1+ parts

$4.550

100+ parts

$2.130

1k+ parts

$1.850

10k+ parts

-

963

$4.550

$2.130

$1.850

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DigiKey

USA . 864 parts In-Stock

1+ parts

$4.550

100+ parts

$2.130

1k+ parts

$1.636

10k+ parts

$1.613

864

$4.550

$2.130

$1.636

$1.613

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$1.573

1k+ parts

$1.447

10k+ parts

-

1,000

-

$1.573

$1.447

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Sensible Micro Corp

USA . 404,200 parts In-Stock

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-

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404,200

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Vyrian

USA . 8,188 parts In-Stock

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8,188

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ACDS - Activité Composants Distribution Service

France . 800 parts In-Stock

1+ parts

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800

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Nova Conductors

Japan . 15 parts In-Stock

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15

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Distributors (Availability)

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Ampacity Inc.

Singapore . 953 parts In-Stock

1+ parts

$1.220

100+ parts

-

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953

$1.220

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CoreStaff

Japan . 1,000 parts In-Stock

1+ parts

$2.516

100+ parts

$0.990

1k+ parts

$0.942

10k+ parts

-

1,000

$2.516

$0.990

$0.942

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Continental Prestige Electronics

USA . 40 parts In-Stock

1+ parts

$2.560

100+ parts

$1.660

1k+ parts

$1.250

10k+ parts

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40

$2.560

$1.660

$1.250

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Microchip USA

USA . 4,326 parts In-Stock

1+ parts

$22.880

100+ parts

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4,326

$22.880

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 1,045 parts In-Stock

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1,045

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Discover the unparalleled quality and reliability of ROHM's RGT50TM65DGC9 Insulated Gate Bipolar Transistor. Made with precision and expertise, this N-CHANNEL transistor is designed for power control applications, offering seamless performance and efficiency. With a maximum collector-emitter voltage of 650V and a nominal turn on time of 65ns, this product ensures optimal functionality and durability. Upgrade your projects with the RGT50TM65DGC9 and experience the unmatched value and benefits it brings to your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control and high performance in various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies the circuit design by eliminating the need for an external diode, saving space and components.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance in high-power systems.

Package Shape: RECTANGULAR

Facilitates easy installation and PCB mounting, making it suitable for a wide range of applications.

Nominal Turn Off Time (toff): 210 ns

Fast turn-off time allows for precise control and efficient operation in power control applications.

Maximum Collector-Emitter Voltage: 650 V

Can handle high voltage levels, making it suitable for use in high-power systems.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability for the transistor element.

Maximum Collector Current (IC): 21 A

Supports high current levels, making it suitable for use in power control applications.

Nominal Turn On Time (ton): 65 ns

Fast turn-on time ensures quick response and efficient operation in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGT50TM65DGC9 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

210 ns

Nominal Turn On Time (ton):

65 ns

Trade Compliance

RGT50TM65DGC9 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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