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RGS50TSX2DHRC11

ROHM

RGS50TSX2DHRC11 by ROHM

ROHM's RGS50TSX2DHRC11 IGBT is a single N-channel transistor with built-in diode, ideal for power control applications. With a max VCEsat of 2.1V and collector current of 50A, it offers efficient performance. Operating at temperatures up to 175°C, this IGBT has a turn-off time of 450ns, making it suitable for high-power applications.

Median Price

$9.265

Lifecycle Status

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Mouser Electronics

USA . 397 parts In-Stock

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$9.260

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$4.780

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$9.260

$4.780

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Chip1Stop

Japan . 3,603 parts In-Stock

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$9.270

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$5.200

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$4.150

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$3.850

3,603

$9.270

$5.200

$4.150

$3.850

DigiKey

USA . 325 parts In-Stock

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$9.290

100+ parts

$5.460

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$4.175

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325

$9.290

$5.460

$4.175

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Verical

USA . 450 parts In-Stock

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$6.392

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$6.198

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450

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$6.392

$6.198

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Nova Conductors

Japan . 650 parts In-Stock

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$6.021

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650

$6.021

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Vyrian

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ACDS - Activité Composants Distribution Service

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Ampacity Inc.

Singapore . 1,378 parts In-Stock

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$4.730

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Aranea Global

USA . 2,000 parts In-Stock

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$5.900

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$5.664

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2,000

$5.900

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$5.664

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CoreStaff

Japan . 450 parts In-Stock

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$6.045

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$4.200

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$4.053

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450

$6.045

$4.200

$4.053

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Microchip USA

USA . 2,329 parts In-Stock

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$29.708

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2,329

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Argo Parts USA

USA . 1,581 parts In-Stock

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Overview

Experience unparalleled power control with the RGS50TSX2DHRC11 by ROHM. As a leader in the industry, ROHM delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that are designed for efficiency and reliability. Perfect for a wide range of applications, this N-CHANNEL transistor with built-in diode offers customers exceptional value with its high performance and maximum power dissipation of 395W. Whether you're looking to optimize your power control systems or enhance your electronics projects, the RGS50TSX2DHRC11 is the perfect solution for all your needs. Unlock the potential of your devices with ROHM's cutting-edge technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs generally have lower conduction losses and faster switching speeds compared to P-Channel IGBTs, making it efficient for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps improve commutation performance and efficiency in power control applications.

Maximum VCEsat: 2.1 V

Low saturation voltage results in lower power dissipation and higher efficiency during operation.

Nominal Turn Off Time (toff): 450 ns

Fast turn-off time allows for efficient switching and control of power in various applications.

Maximum Power Dissipation (Abs): 395 W

High power dissipation capability ensures the transistor can handle heavy loads without overheating.

Maximum Collector-Emitter Voltage: 1200 V

High voltage rating allows for use in high power applications without the risk of breakdown.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Maximum Collector Current (IC): 50 A

High collector current rating allows for handling of heavy loads in power control applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

Low gate-emitter threshold voltage facilitates easy gate control for efficient switching.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGS50TSX2DHRC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

450 ns

Nominal Turn On Time (ton):

53 ns

Maximum VCEsat:

2.1 V

Trade Compliance

RGS50TSX2DHRC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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