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RGS50TSX2DGC11

ROHM

RGS50TSX2DGC11 by ROHM

ROHM's RGS50TSX2DGC11 IGBT features 1200V VCE, 50A IC, and 2.1V VCEsat. Ideal for power control applications with N-CHANNEL polarity in a PLASTIC/EPOXY package style. Operating temperature ranges from -40 to 175°C, making it suitable for various industrial uses.

Median Price

$9.210

Lifecycle Status

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Farnell

UK . 318 parts In-Stock

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$6.980

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$4.000

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$3.920

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318

$6.980

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$3.920

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Chip1Stop

Japan . 430 parts In-Stock

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$9.200

100+ parts

$4.580

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$4.120

10k+ parts

$3.820

430

$9.200

$4.580

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$3.820

Mouser Electronics

USA . 238 parts In-Stock

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$9.220

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$9.220

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DigiKey

USA . 340 parts In-Stock

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$10.590

100+ parts

$6.296

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$4.961

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340

$10.590

$6.296

$4.961

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Element14

Singapore . 318 parts In-Stock

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$12.550

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$8.050

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318

$12.550

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Verical

USA . 450 parts In-Stock

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$5.885

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$5.707

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450

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$5.707

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Nova Conductors

Japan . 600 parts In-Stock

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600

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ACDS - Activité Composants Distribution Service

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Continental Prestige Electronics

USA . 395 parts In-Stock

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$7.700

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$5.750

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395

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CoreStaff

Japan . 450 parts In-Stock

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$9.248

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$3.537

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450

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Microchip USA

USA . 3,009 parts In-Stock

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$28.028

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Aranea Global

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500

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Overview

Upgrade your power control applications with the RGS50TSX2DGC11 by ROHM, a high-quality N-CHANNEL Insulated Gate Bipolar Transistor with a single configuration and built-in diode. Manufactured with precision and expertise, this transistor offers a maximum VCEsat of 2.1V and a maximum collector-emitter voltage of 1200V, ensuring optimal performance in various power control scenarios. With a fast turn-off time of 450ns and a nominal turn-on time of 53ns, this transistor provides efficient and reliable operation. Trust ROHM for innovation and quality in semiconductor technology, and experience the value and benefits that the RGS50TSX2DGC11 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package of this IGBT durable and resistant to environmental factors.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have lower on-state voltage drop and higher efficiency compared to P-channel types.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and helps in minimizing voltage spikes during switching, enhancing the overall reliability of the product.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring efficient and reliable performance in high-power circuits.

Maximum VCEsat: 2.1 V

Low VCEsat value indicates reduced power dissipation and high efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular packages are easy to mount and provide better thermal management compared to other shapes.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer a strong mechanical connection and are suitable for applications where reliability and stability are crucial.

Nominal Turn Off Time (toff): 450 ns

Fast turn-off time ensures quick switching speed, reducing power losses and improving efficiency.

No. of Terminals: 3

The minimal number of terminals simplifies the connection process and reduces the risk of errors during installation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy mounting and secure attachment, ideal for industrial applications where vibration resistance is required.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance in elevated temperature environments.

Maximum Collector-Emitter Voltage: 1200 V

High voltage rating allows for use in high-power circuits and applications without the risk of voltage breakdown.

Transistor Element Material: SILICON

Silicon material offers a good balance of performance and cost-effectiveness, making it suitable for a wide range of applications.

Maximum Gate-Emitter Voltage: 30 V

Adequate gate-emitter voltage rating ensures safe and reliable operation within the specified limits.

Minimum Operating Temperature: -40 °C

Wide temperature range makes the IGBT suitable for use in extreme environmental conditions without compromising performance.

Maximum Collector Current (IC): 50 A

High collector current rating allows for handling large currents, making it suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

Threshold voltage within the specified limit ensures proper gate control and reliable switching behavior.

Terminal Finish: TIN

Tin terminal finish provides good solderability and prevents corrosion, ensuring a reliable electrical connection.

Terminal Position: SINGLE

Single terminal position simplifies the wiring process and minimizes the chances of misconnections.

Nominal Turn On Time (ton): 53 ns

Fast turn-on time allows for quick response and switching speed, improving overall efficiency of the device.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGS50TSX2DGC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

450 ns

Nominal Turn On Time (ton):

53 ns

Maximum VCEsat:

2.1 V

Trade Compliance

RGS50TSX2DGC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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