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APT80GP60J

Advanced Power Technology

APT80GP60J by Advanced Power Technology

APT80GP60J by Advanced Power Technology is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 151A max collector current. It has a single configuration, 284ns turn off time, and is used for power control applications. The transistor comes in a rectangular package style with flange mount and can handle up to 462W power dissipation at a max operating temperature of 150°C.

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Overview

Discover the power and reliability of the APT80GP60J by Advanced Power Technology. This Insulated Gate Bipolar Transistor (IGBT) offers unparalleled performance in power control applications, with a maximum collector-emitter voltage of 600V and a maximum collector current of 151A. The single-channel configuration and fast turn-on/off times make it ideal for various industrial and automotive uses. Trust in the quality of Advanced Power Technology to deliver top-of-the-line components that exceed expectations and provide long-lasting value for your projects. Experience the difference with the APT80GP60J.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high durability and resistance to environmental factors, making the product suitable for various industrial applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring efficient and reliable performance when handling high power loads.

Maximum Power Dissipation (Abs): 462 W

Can efficiently dissipate heat generated during operation, allowing for continuous and stable performance under heavy load conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the product can withstand elevated temperatures and operate reliably in demanding environments.

Maximum Collector-Emitter Voltage: 600 V

With a high voltage rating, the product is suitable for applications requiring the handling of high voltage requirements.

Maximum Collector Current (IC): 151 A

Capable of handling high current loads, making it ideal for power control applications that require high current switching.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT80GP60J attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Advanced Power Technology

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

284 ns

Nominal Turn On Time (ton):

87 ns

Trade Compliance

APT80GP60J Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Advanced Power Technology

Established in 1990, Advanced Power Technology is a leading independent supplier of Energy Efficient Critical Power and Cooling Systems. We are experts in designing, building and supporting data centres, server rooms and comms rooms. We always strive to implement the most resilient, yet energy efficient solution. We provide initial consultation and specification, through to project implementation and beyond. We undertake projects of all sizes in all market sectors. We can advise and deliver the solution best suited to your needs whatever the circumstances dictate.

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