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IRG4BC30FDPBF

International Rectifier

IRG4BC30FDPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; JESD-609 Code: e3;

Median Price

$3.061

Lifecycle Status

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5

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1k+

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Nova Conductors

Japan . 83 parts In-Stock

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$3.061

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Chip Stock

USA . 38,900 parts In-Stock

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ComSIT Distribution GmbH

Germany . 6,980 parts In-Stock

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Vyrian

USA . 581 parts In-Stock

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Digiode

USA . 516 parts In-Stock

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Modulus Dynamics

Lithuania . 17,995 parts In-Stock

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$0.382

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$0.367

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$0.351

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.556

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$0.506

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$0.456

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70

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Continental Prestige Electronics

USA . 6,681 parts In-Stock

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$3.061

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Argo Parts USA

USA . 2,830 parts In-Stock

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AZTECH Wire

Italy . 226 parts In-Stock

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$6.035

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Ampacity Inc.

Singapore . 1,284 parts In-Stock

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Perfect Parts

USA . 7,672 parts In-Stock

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Microchip USA

USA . 6,963 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 1,920 parts In-Stock

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Corphita

USA . 808 parts In-Stock

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Assy Fe

Spain . 108 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG4BC30FDPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

620 ns

Nominal Turn On Time (ton):

69 ns

Trade Compliance

IRG4BC30FDPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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