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IXA70I1200NA

Littelfuse

IXA70I1200NA by Littelfuse

IXA70I1200NA by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 100A IC, and 350W power dissipation. Ideal for power control applications, it features a fast turn-off time of 350ns and operates b/w -40 to 150°C.

Median Price

$38.800

Lifecycle Status

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7

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< 1k

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Mouser Electronics

USA . 14 parts In-Stock

1+ parts

$37.360

100+ parts

$26.710

1k+ parts

$26.690

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14

$37.360

$26.710

$26.690

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Chip1Stop

Japan . 10 parts In-Stock

1+ parts

$38.800

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$26.800

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$26.700

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10

$38.800

$26.800

$26.700

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Verical

USA . 10 parts In-Stock

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$49.625

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10

$49.625

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Distrelec

Netherlands . 3 parts In-Stock

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Nova Conductors

Japan . 29 parts In-Stock

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$27.694

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29

$27.694

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TME

Poland . 22 parts In-Stock

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$40.700

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Vyrian

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AZTECH Wire

Italy . 505 parts In-Stock

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$17.195

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505

$17.195

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Aranea Global

USA . 2,000 parts In-Stock

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$27.140

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$26.054

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2,000

$27.140

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$26.054

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Ampacity Inc.

Singapore . 9 parts In-Stock

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$31.760

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Component Stockers USA

USA . 49 parts In-Stock

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$33.060

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49

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Microchip USA

USA . 8,578 parts In-Stock

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$81.144

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Argo Parts USA

USA . 2,747 parts In-Stock

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2,747

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Authorized Procurement Solutions

USA . 600 parts In-Stock

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600

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Perfect Parts

USA . 12 parts In-Stock

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Overview

Littelfuse's IXA70I1200NA Insulated Gate Bipolar Transistor (IGBT) is a game-changer in power control applications. With its high-quality construction and reliable performance, this N-CHANNEL transistor offers customers unparalleled value and benefits. Ideal for a range of industrial uses, this single-configured transistor provides maximum power dissipation of 350W and a maximum collector-emitter voltage of 1200V. Trust Littelfuse to deliver top-notch products that meet your power control needs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs offer lower conduction losses, making them efficient for power control applications.

Configuration: SINGLE

A single configuration simplifies installation and reduces complexity in circuit design.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and reliability.

Maximum VCEsat: 2.1 V

Low VCEsat value results in reduced power dissipation and improved efficiency.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and fitting in tight spaces.

Nominal Turn Off Time (toff): 350 ns

Fast turn-off time enhances switching speed and efficiency of power control operations.

No. of Terminals: 4

Four terminals provide flexibility in connection and compatibility with various circuit configurations.

Maximum Power Dissipation (Abs): 350 W

High power dissipation capability allows for handling heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting and ensures stable operation.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance ensures reliability in demanding environmental conditions.

Maximum Collector-Emitter Voltage: 1200 V

The high VCE rating enables the IGBT to handle high voltage applications effectively.

Transistor Element Material: SILICON

Silicon material ensures high performance and durability for long-term use.

Maximum Gate-Emitter Voltage: 20 V

The high gate-emitter voltage rating provides safety and stability during operation.

Minimum Operating Temperature: -40 °C

Low operating temperature tolerance allows for use in a wide range of environments.

Maximum Collector Current (IC): 100 A

The high collector current rating enables the IGBT to handle high current loads efficiently.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

The gate-emitter threshold voltage ensures reliable switching and control of the IGBT.

Terminal Position: UPPER

The upper terminal position makes it convenient for installation and wiring in various setups.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents electrical interference in the circuit.

Nominal Turn On Time (ton): 110 ns

Fast turn-on time enhances switching speed and improves overall efficiency.

Reference Standard: IEC-60747; UL RECOGNIZED

Compliance with international standards ensures quality, safety, and performance reliability.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXA70I1200NA attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60747; UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

350 ns

Nominal Turn On Time (ton):

110 ns

Maximum VCEsat:

2.1 V

Trade Compliance

IXA70I1200NA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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