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APT35GP120J

Advanced Power Technology

APT35GP120J by Advanced Power Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 284 W; Maximum Collector Current (IC): 64 A; Package Shape: RECTANGULAR;

Median Price

$37.870

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 20 parts In-Stock

1+ parts

$37.870

100+ parts

$30.738

1k+ parts

-

10k+ parts

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20

$37.870

$30.738

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 1 parts In-Stock

1+ parts

$43.800

100+ parts

-

1k+ parts

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10k+ parts

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1

$43.800

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$2.133

100+ parts

$1.941

1k+ parts

$1.749

10k+ parts

-

2,000

$2.133

$1.941

$1.749

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Corohmni

South Africa . 63 parts In-Stock

1+ parts

$30.330

100+ parts

-

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63

$30.330

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Microchip USA

USA . 3,667 parts In-Stock

1+ parts

$70.587

100+ parts

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3,667

$70.587

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Glotronic Ltd.

UK . 3,300 parts In-Stock

1+ parts

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3,300

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West Coast Incorporated

USA . 3,131 parts In-Stock

1+ parts

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3,131

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,000

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Perfect Parts

USA . 18 parts In-Stock

1+ parts

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18

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT35GP120J attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Advanced Power Technology

Specs

Additional Features:

ULTRA FAST, LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

222 ns

Nominal Turn On Time (ton):

36 ns

Trade Compliance

APT35GP120J Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Advanced Power Technology

Established in 1990, Advanced Power Technology is a leading independent supplier of Energy Efficient Critical Power and Cooling Systems. We are experts in designing, building and supporting data centres, server rooms and comms rooms. We always strive to implement the most resilient, yet energy efficient solution. We provide initial consultation and specification, through to project implementation and beyond. We undertake projects of all sizes in all market sectors. We can advise and deliver the solution best suited to your needs whatever the circumstances dictate.

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