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FPF1C2P5MF07AM

Onsemi

FPF1C2P5MF07AM by Onsemi

FPF1C2P5MF07AM by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 1.6V, it has a Max Collector-Emitter Voltage of 620V and can handle up to 39A of Max Collector Current (IC). Ideal for high-power systems requiring efficient power management.

Median Price

$53.680

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 657 parts In-Stock

1+ parts

$34.306

100+ parts

-

1k+ parts

-

10k+ parts

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657

$34.306

-

-

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Rochester

USA . 766 parts In-Stock

1+ parts

-

100+ parts

$53.680

1k+ parts

$48.030

10k+ parts

$45.200

766

-

$53.680

$48.030

$45.200

Verical

USA . 659 parts In-Stock

1+ parts

-

100+ parts

$67.100

1k+ parts

$60.038

10k+ parts

$56.500

659

-

$67.100

$60.038

$56.500

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,594 parts In-Stock

1+ parts

$32.591

100+ parts

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1,594

$32.591

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Vyrian

USA . 7,830 parts In-Stock

1+ parts

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7,830

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,785 parts In-Stock

1+ parts

$0.440

100+ parts

-

1k+ parts

-

10k+ parts

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2,785

$0.440

-

-

-

AZTECH Wire

Italy . 901 parts In-Stock

1+ parts

$18.920

100+ parts

-

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901

$18.920

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Continental Prestige Electronics

USA . 766 parts In-Stock

1+ parts

$26.450

100+ parts

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766

$26.450

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Semicontronic

India . 683 parts In-Stock

1+ parts

$29.160

100+ parts

$28.431

1k+ parts

$28.285

10k+ parts

-

683

$29.160

$28.431

$28.285

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Corphita

USA . 842 parts In-Stock

1+ parts

$30.875

100+ parts

-

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842

$30.875

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Corohmni

South Africa . 290 parts In-Stock

1+ parts

$34.306

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290

$34.306

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Ampacity Inc.

Singapore . 580 parts In-Stock

1+ parts

$63.470

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580

$63.470

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Microchip USA

USA . 160 parts In-Stock

1+ parts

$122.765

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160

$122.765

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Kulean Microsystems

USA . 5,947 parts In-Stock

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5,947

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Argo Parts USA

USA . 2,549 parts In-Stock

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2,549

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TANS Electronics

Latvia . 2,288 parts In-Stock

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2,288

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SupplyDigital Components

Austria . 1,800 parts In-Stock

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1,800

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Problanco Electronics

Mexico . 1,626 parts In-Stock

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1,626

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Bastille Electronics

Australia . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 866 parts In-Stock

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866

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Overview

Unleash the power of innovation with the FPF1C2P5MF07AM by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their Insulated Gate Bipolar Transistors (IGBT). Perfect for power control applications, this N-CHANNEL transistor offers a maximum VCEsat of 1.6V and a maximum IC of 39A. With a package style of FLANGE MOUNT and UL approval, this transistor is designed to withstand high temperatures and deliver exceptional performance. Elevate your projects with the FPF1C2P5MF07AM and experience unparalleled value and efficiency like never before.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL -

Allows for efficient power control and high performance in various electronic applications.

Configuration: COMPLEX -

Provides more complex functionality and capabilities for advanced power control systems.

Transistor Application: POWER CONTROL -

Ideal for applications requiring precise control over power distribution and management.

Maximum VCEsat: 1.6 V -

Low voltage drop ensures minimal power loss and improved efficiency during operation.

Package Shape: RECTANGULAR -

Offers a compact and versatile design for easy integration into different circuit layouts.

No. of Elements: 2 -

Provides redundancy and stability for continuous operation in case of failure of one element.

No. of Terminals: 24 -

Allows for multiple connection options and flexibility in circuit configurations.

Maximum Power Dissipation (Abs): 231 W -

Capable of handling high power loads without overheating or performance degradation.

Package Style (Meter): FLANGE MOUNT -

Facilitates secure mounting and heat dissipation for reliable and long-lasting operation.

Maximum Operating Temperature: 150 °C -

Withstands high temperatures to operate efficiently in demanding environments.

Maximum Collector-Emitter Voltage: 620 V -

Handles high voltage levels with ease for a wide range of power control applications.

Transistor Element Material: SILICON -

Offers durability and reliability in various operating conditions.

Maximum Gate-Emitter Voltage: 20 V -

Ensures stable gate control and precise input signals for accurate power modulation.

Minimum Operating Temperature: -40 °C -

Can operate in extreme cold temperatures without compromising performance.

Maximum Collector Current (IC): 39 A -

Capable of handling high current levels for demanding power control applications.

Maximum Gate-Emitter Threshold Voltage: 7 V -

Provides a suitable threshold for gate control and efficient power regulation.

Terminal Position: UPPER -

Eases installation and connection process in circuit designs with convenient terminal placement.

Reference Standard: UL APPROVED -

Meets safety and quality standards for reliable operation and compliance in various industries.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FPF1C2P5MF07AM attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

620 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X24

No. of Elements:

2

No. of Terminals:

24

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL APPROVED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

FPF1C2P5MF07AM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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