Loading...

STGP7NB60HD

STMicroelectronics

STGP7NB60HD by STMicroelectronics

STGP7NB60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 14A max collector current, and 80W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 220ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,122 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,122

-

-

-

-

Anansix

USA . 2,594 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,594

-

-

-

-

Lantek

USA . 1,493 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,493

-

-

-

-

Digiode

USA . 492 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

492

-

-

-

-

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

300

-

-

-

-

Elcom Components

USA . 197 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

197

-

-

-

-

Pegasus Components GmbH

Germany . 32 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

32

-

-

-

-

ComSIT Distribution GmbH

Germany . 28 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

28

-

-

-

-

Bristol Electronics

USA . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

Atlantic Semiconductor

USA . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

LittleDiode

UK . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,216 parts In-Stock

1+ parts

$1.504

100+ parts

-

1k+ parts

$1.354

10k+ parts

-

2,216

$1.504

-

$1.354

-

Corohmni

South Africa . 65 parts In-Stock

1+ parts

$1.752

100+ parts

-

1k+ parts

-

10k+ parts

-

65

$1.752

-

-

-

MKK Technologies

India . 680 parts In-Stock

1+ parts

$2.829

100+ parts

-

1k+ parts

-

10k+ parts

-

680

$2.829

-

-

-

DigiPath Technology Company

USA . 680 parts In-Stock

1+ parts

$2.829

100+ parts

-

1k+ parts

-

10k+ parts

-

680

$2.829

-

-

-

Ampacity Inc.

Singapore . 1,153 parts In-Stock

1+ parts

$10.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,153

$10.050

-

-

-

AZTECH Wire

Italy . 640 parts In-Stock

1+ parts

$17.000

100+ parts

-

1k+ parts

-

10k+ parts

-

640

$17.000

-

-

-

A-Z Elektronik GmbH

Germany . 5,498 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,498

-

-

-

-

Continental Prestige Electronics

USA . 3,454 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,454

-

-

-

-

Argo Parts USA

USA . 1,522 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,522

-

-

-

-

GreenTree Electronics

Israel . 1,493 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,493

-

-

-

-

Corphita

USA . 915 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

915

-

-

-

-

Parana Technologies

USA . 176 parts In-Stock

1+ parts

-

100+ parts

$1.798

1k+ parts

-

10k+ parts

-

176

-

$1.798

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Upgrade your motor control systems with the STGP7NB60HD insulated gate bipolar transistor by STMicroelectronics. Designed with precision and reliability in mind, this N-channel transistor boasts a built-in diode for seamless operation. Ideal for various applications, this product offers a nominal turn-off time of 220 ns, maximum power dissipation of 80 W, and a maximum collector-emitter voltage of 600 V. Experience enhanced performance and efficiency with the STGP7NB60HD, a top-quality component that delivers unmatched value and benefits to customers looking to optimize their motor control processes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability to protect the internal components, making the transistor reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drop and faster switching speeds, making them efficient for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy and efficient current flow in motor control circuits, improving overall performance.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and reliability in such systems.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and fitting in standard electronic circuits, making installation straightforward.

Nominal Turn Off Time (toff): 220 ns

The fast turn-off time enhances efficiency and reduces heat generation in the transistor during operation.

Maximum Power Dissipation (Abs): 80 W

With a high maximum power dissipation, this IGBT can handle heavy loads and prolonged operation without overheating.

Maximum Collector-Emitter Voltage: 600 V

The high voltage rating allows for use in high-power applications without risk of damage to the transistor.

Maximum Collector Current (IC): 14 A

The high collector current rating ensures that the IGBT can handle large currents without reliability issues.

Maximum Gate-Emitter Voltage: 20 V

The high gate-emitter voltage rating provides adequate protection against voltage spikes and ensures stable operation.

Maximum Gate-Emitter Threshold Voltage: 5 V

The low gate-emitter threshold voltage allows for efficient control of the IGBT, making it suitable for precision applications.

Nominal Turn On Time (ton): 63 ns

The fast turn-on time ensures quick response in switching operations, improving overall efficiency in motor control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGP7NB60HD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

220 ns

Nominal Turn On Time (ton):

63 ns

Trade Compliance

STGP7NB60HD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19