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STGP30V60F

STMicroelectronics

STGP30V60F by STMicroelectronics

STGP30V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 260W power dissipation, and 60A collector current. Ideal for POWER CONTROL applications, it has a turn-off time of 225ns and operates b/w -55 to 175°C.

Median Price

$4.020

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 1,000 parts In-Stock

1+ parts

$4.020

100+ parts

$2.660

1k+ parts

$1.910

10k+ parts

$1.740

1,000

$4.020

$2.660

$1.910

$1.740

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.720

100+ parts

-

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-

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50

$1.720

-

-

-

Chip Stock

USA . 8,150 parts In-Stock

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-

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8,150

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Vyrian

USA . 6,429 parts In-Stock

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6,429

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-

-

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Anansix

USA . 724 parts In-Stock

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-

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724

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Digiode

USA . 720 parts In-Stock

1+ parts

-

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720

-

-

-

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Bristol Electronics

USA . 70 parts In-Stock

1+ parts

-

100+ parts

$1.232

1k+ parts

$1.232

10k+ parts

$1.232

70

-

$1.232

$1.232

$1.232

Microfarads

USA . 67 parts In-Stock

1+ parts

-

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-

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67

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,270 parts In-Stock

1+ parts

$0.863

100+ parts

-

1k+ parts

-

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-

4,270

$0.863

-

-

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IDEA Electronic Components Group

UK . 1,822 parts In-Stock

1+ parts

$1.295

100+ parts

-

1k+ parts

$1.166

10k+ parts

-

1,822

$1.295

-

$1.166

-

Corohmni

South Africa . 233 parts In-Stock

1+ parts

$1.540

100+ parts

-

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-

10k+ parts

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233

$1.540

-

-

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Bastille Electronics

Australia . 15,740 parts In-Stock

1+ parts

$1.720

100+ parts

$1.634

1k+ parts

$1.552

10k+ parts

$1.531

15,740

$1.720

$1.634

$1.552

$1.531

Continental Prestige Electronics

USA . 2,323 parts In-Stock

1+ parts

$1.720

100+ parts

-

1k+ parts

-

10k+ parts

$1.686

2,323

$1.720

-

-

$1.686

Argo Parts USA

USA . 456 parts In-Stock

1+ parts

$1.720

100+ parts

-

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456

$1.720

-

-

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MKK Technologies

India . 2,138 parts In-Stock

1+ parts

$2.436

100+ parts

-

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2,138

$2.436

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DigiPath Technology Company

USA . 2,138 parts In-Stock

1+ parts

$2.436

100+ parts

-

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2,138

$2.436

-

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AZTECH Wire

Italy . 475 parts In-Stock

1+ parts

$16.796

100+ parts

-

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475

$16.796

-

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Microchip USA

USA . 152 parts In-Stock

1+ parts

$19.695

100+ parts

-

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152

$19.695

-

-

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Semicontronic

India . 581 parts In-Stock

1+ parts

$23.050

100+ parts

$22.474

1k+ parts

$22.358

10k+ parts

-

581

$23.050

$22.474

$22.358

-

Ampacity Inc.

Singapore . 636 parts In-Stock

1+ parts

$63.050

100+ parts

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636

$63.050

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Lixinc

USA . 13,774 parts In-Stock

1+ parts

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13,774

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RC Electronics

USA . 6,600 parts In-Stock

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6,600

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Corphita

USA . 2,112 parts In-Stock

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2,112

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Parana Technologies

USA . 2,012 parts In-Stock

1+ parts

-

100+ parts

$1.549

1k+ parts

-

10k+ parts

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2,012

-

$1.549

-

-

Overview

Unleash the power of the STGP30V60F from STMicroelectronics, a top-tier manufacturer known for delivering high-quality electronic components. As an Insulated Gate Bipolar Transistor (IGBT), this single-channel device is designed for power control applications, offering a maximum collector-emitter voltage of 600V and a maximum collector current of 60A. With a nominal turn-off time of 225ns and a maximum power dissipation of 260W, this IGBT ensures efficient performance and reliability. Whether you're looking to optimize your power management system or enhance your industrial applications, the STGP30V60F provides unmatched value, benefits, and advantages that cater to your specific needs. Experience the difference with STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material combination provides strong protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel design allows for efficient power control, making this transistor suitable for applications requiring high performance.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easier to use in different electronic systems.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, this transistor can handle high power levels effectively and efficiently.

Maximum VCEsat: 2.3 V

With a low VCEsat value, this transistor minimizes power loss and improves overall efficiency in power management systems.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and integration into various electronic devices and systems.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide secure and stable connections, ensuring reliable performance in different environments.

Nominal Turn Off Time (toff): 225 ns

The fast turn-off time enhances the switching speed of the transistor, making it suitable for applications requiring quick response times.

No. of Terminals: 3

The three terminals offer flexibility in connection options, allowing for versatile use in different circuit configurations.

Maximum Power Dissipation (Abs): 260 W

The high power dissipation capability enables the transistor to handle large power loads without overheating or performance degradation.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides easy and secure mounting options, making it suitable for various installation requirements.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, this transistor can withstand extreme heat conditions and maintain stable performance.

Maximum Collector-Emitter Voltage: 600 V

The high collector-emitter voltage rating allows the transistor to handle high voltage levels, making it suitable for power control applications.

Transistor Element Material: SILICON

The silicon element material ensures reliable performance and durability, making this transistor a long-lasting option for various applications.

Maximum Gate-Emitter Voltage: 20 V

The high gate-emitter voltage rating provides improved gate control, enhancing the overall efficiency and performance of the transistor.

Minimum Operating Temperature: -55 °C

With a wide temperature range, this transistor can operate in harsh environmental conditions, ensuring reliable performance in diverse applications.

Maximum Collector Current (IC): 60 A

The high collector current rating allows the transistor to handle large current loads, making it ideal for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

The gate-emitter threshold voltage ensures proper gate control, enhancing the overall performance and efficiency of the transistor.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures stable electrical connections, extending the lifespan of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies the installation process, making it easier to integrate this transistor into different electronic systems.

Case Connection: COLLECTOR

The collector case connection improves heat dissipation and ensures efficient thermal management, enhancing the overall reliability of the transistor.

Nominal Turn On Time (ton): 59 ns

The fast turn-on time enhances the switching speed of the transistor, making it suitable for applications requiring quick response times.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGP30V60F attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

225 ns

Nominal Turn On Time (ton):

59 ns

Maximum VCEsat:

2.3 V

Trade Compliance

STGP30V60F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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