Loading...

FGL60N100D

Fairchild Semiconductor

FGL60N100D by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Collector Current (IC): 60 A; Additional Features: LOW CONDUCTION LOSS, HIGH SPEED SWITCHING;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 776 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

776

-

-

-

-

Vyrian

USA . 336 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

336

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 100 parts In-Stock

1+ parts

$1.054

100+ parts

$1.054

1k+ parts

$1.054

10k+ parts

-

100

$1.054

$1.054

$1.054

-

Andel Nordic

Denmark . 5,877 parts In-Stock

1+ parts

$3.136

100+ parts

-

1k+ parts

$3.011

10k+ parts

$3.011

5,877

$3.136

-

$3.011

$3.011

Supply Digital

USA . 548 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

548

-

-

-

-

Corphita

USA . 444 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

444

-

-

-

-

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGL60N100D attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fairchild Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1000 V

Maximum Fall Time (tf):

330 ns

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

700 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

650 ns

Nominal Turn On Time (ton):

520 ns

Trade Compliance

FGL60N100D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.