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IRGB14C40L

International Rectifier

IRGB14C40L by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Package Style (Meter): FLANGE MOUNT;

Median Price

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Lifecycle Status

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3

In-Stock Inventory

< 1k

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Vyrian

USA . 421 parts In-Stock

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Digiode

USA . 204 parts In-Stock

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LittleDiode

UK . 6 parts In-Stock

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Modulus Dynamics

Lithuania . 4,554 parts In-Stock

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$0.997

100+ parts

$0.957

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$0.917

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4,554

$0.997

$0.957

$0.917

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A-Z Elektronik GmbH

Germany . 6,993 parts In-Stock

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6,993

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Alle Elektronik GmbH

Germany . 4,662 parts In-Stock

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Corphita

USA . 226 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGB14C40L attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

LOW SATURATION VOLTAGE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

370 V

Maximum Gate-Emitter Threshold Voltage:

2.2 V

Maximum Gate-Emitter Voltage:

12 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

4000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn On Time (ton):

3700 ns

Trade Compliance

IRGB14C40L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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