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STMicroelectronics Insulated Gate Bipolar Transistors (IGBT) 292

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGWT20V60F by STMicroelectronics

STGWT20V60F

STMicroelectronics

STGWT20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 49ns ton. It is used for power control applications due to its single configuration with built-in diode and flange mount package style.

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

173 ns

49 ns

STGB40V60F by STMicroelectronics

STGB40V60F

STMicroelectronics

STGB40V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V VCE, 80A IC, and 283W power dissipation. Ideal for power control applications, it has a toff of 241ns and ton of 73ns.

COLLECTOR

80 A

600 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

283 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

STGP40V60F by STMicroelectronics

STGP40V60F

STMicroelectronics

STGP40V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 283W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 241ns and high operating temperature range (-55 °C to 175°C).

COLLECTOR

80 A

600 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

283 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

STGW20H60DF by STMicroelectronics

STGW20H60DF

STMicroelectronics

STGW20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V and IC of 40A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and turn-off time of 259ns. This SINGLE transistor in PLASTIC/EPOXY package operates b/w -55 to 175 °C.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

259 ns

259 ns

55.9 ns

2 V

STGWT20H60DF by STMicroelectronics

STGWT20H60DF

STMicroelectronics

STGWT20H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 167W power dissipation. Ideal for power control applications due to its fast turn-on/off times and high collector-emitter voltage. Package style: FLANGE MOUNT, terminal form: THROUGH-HOLE, and operating temperature range: -55 to 175 °C.

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

259 ns

259 ns

55.9 ns

2 V

STGB20V60F by STMicroelectronics

STGB20V60F

STMicroelectronics

STGB20V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.2V, IC of 20A, and Ptot of 167W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 173ns and turn-on time (ton) of 49ns. Suitable for surface mount with a max operating temperature of 175 °C.

COLLECTOR

20 A

600 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

167 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

173 ns

49 ns

2.2 V

STGB30V60F by STMicroelectronics

STGB30V60F

STMicroelectronics

STGB30V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V and IC of 60A, ideal for POWER CONTROL applications. It has a toff of 225ns, ton of 59ns, and can handle up to 260W power dissipation. Suitable for surface mount with operating temperature range from -55°C to 175°C.

COLLECTOR

60 A

600 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGFW30V60F by STMicroelectronics

STGFW30V60F

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Maximum Collector Current (IC): 60 A; Transistor Application: POWER CONTROL;

ISOLATED

60 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

58 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGP20V60F by STMicroelectronics

STGP20V60F

STMicroelectronics

STGP20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 20A IC, and 2.2V VCE. Ideal for POWER CONTROL applications, it has a toff of 173ns and ton of 49ns. The package style is FLANGE MOUNT with a max power dissipation of 167W at 175 °C operating temperature.

COLLECTOR

20 A

600 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

173 ns

49 ns

2.2 V

STGP30V60F by STMicroelectronics

STGP30V60F

STMicroelectronics

STGP30V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 260W power dissipation, and 60A collector current. Ideal for POWER CONTROL applications, it has a turn-off time of 225ns and operates b/w -55 to 175°C.

COLLECTOR

60 A

600 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

260 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGW30V60F by STMicroelectronics

STGW30V60F

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Transistor Element Material: SILICON;

60 A

600 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGW60H65FB by STMicroelectronics

STGW60H65FB

STMicroelectronics

STGW60H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC. It is used for POWER CONTROL applications, featuring a 375W power dissipation and -55 to 175°C operating temperature range.

80 A

650 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

230 ns

104 ns

2 V

STGWT30V60F by STMicroelectronics

STGWT30V60F

STMicroelectronics

STGWT30V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 60A, and Ptot of 260W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 225ns and high operating temperature range (-55 to 175 °C).

COLLECTOR

60 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGWT40H65FB by STMicroelectronics

STGWT40H65FB

STMicroelectronics

STGWT40H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 283W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 202ns and high operating temperature range (-55 °C to 175°C).

COLLECTOR

80 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

283 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

202 ns

52 ns

2 V

STGWT60H65FB by STMicroelectronics

STGWT60H65FB

STMicroelectronics

STGWT60H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC. It is designed for POWER CONTROL applications, featuring a max power dissipation of 375W and operating temperature range from -55 °C to 175°C.

COLLECTOR

80 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

230 ns

104 ns

2 V

STGFW30H65FB by STMicroelectronics

STGFW30H65FB

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Maximum Collector Current (IC): 60 A; JESD-30 Code: R-PSFM-T3;

60 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

58 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGWT30H65FB by STMicroelectronics

STGWT30H65FB

STMicroelectronics

STGWT30H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 260W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 223ns and low VCEsat of 2V. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

COLLECTOR

60 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGP7NB60HD by STMicroelectronics

STGP7NB60HD

STMicroelectronics

STGP7NB60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 14A max collector current, and 80W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 220ns.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

220 ns

63 ns

STGFW40H65FB by STMicroelectronics

STGFW40H65FB

STMicroelectronics

STGFW40H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat, 80A IC, and 62.5W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 202ns and high operating temperature range (-55 to 175 °C).

ISOLATED

80 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

62.5 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

202 ns

52 ns

2 V

STGY80H65DFB by STMicroelectronics

STGY80H65DFB

STMicroelectronics

STMicroelectronics' STGY80H65DFB is an N-CHANNEL IGBT with 650V VCEsat, 120A IC, and 469W Pd. Ideal for POWER CONTROL applications due to its fast turn-off time of 358ns and high operating temperature range (-55 °C to 175°C).

COLLECTOR

120 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSIP-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

358 ns

128 ns

2 V

STGB7NB60HDT4 by STMicroelectronics

STGB7NB60HDT4

STMicroelectronics

STGB7NB60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 14A max collector current, and 80W max power dissipation. Ideal for motor control applications due to its built-in diode, fast turn-off time of 220ns, and small outline package style.

COLLECTOR

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

220 ns

63 ns

STGB10NB37LZ by STMicroelectronics

STGB10NB37LZ

STMicroelectronics

STGB10NB37LZ by STMicroelectronics is an N-CHANNEL IGBT with 375V max collector-emitter voltage, 20A max collector current, and 125W max power dissipation. It's designed for automotive ignition applications due to its built-in diode and resistor, small outline package style, and matte tin terminal finish.

VOLTAGE CLAMPING

COLLECTOR

20 A

375 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.4 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

17800 ns

860 ns

STGB20N40LZ by STMicroelectronics

STGB20N40LZ

STMicroelectronics

STGB20N40LZ IGBT from STMicroelectronics features a max VCEsat of 1.8V, supports automotive ignition applications, and operates at up to 175 °C. It offers a max collector current of 25A and includes built-in TVS diode for enhanced protection. Ideal for compact designs with its surface mount configuration.

COLLECTOR

25 A

425 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.5 V

16 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

8200 ns

5200 ns

1.8 V

STGFW40V60DF by STMicroelectronics

STGFW40V60DF

STMicroelectronics

STGFW40V60DF from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 600V collector-emitter voltage, and operates at temperatures from -55 °C to 175°C. Ideal for high-performance switching in industrial systems.

ISOLATED

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

98.5 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

STGB20NB32LZ by STMicroelectronics

STGB20NB32LZ

STMicroelectronics

STGB20NB32LZ from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 325 V, power dissipation of 150 W, and operates at up to 175 °C. Its compact surface mount design ensures efficient performance in demanding environments.

COLLECTOR

40 A

325 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2 V

TO-263

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

15900 ns

2900 ns

STGB20NB37LZ by STMicroelectronics

STGB20NB37LZ

STMicroelectronics

STGB20NB37LZ from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector current of 40 A, power dissipation of 150 W, and operates up to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.

ESD PROTECTED

COLLECTOR

40 A

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

15000 ns

2900 ns

STGW28IH125DF by STMicroelectronics

STGW28IH125DF

STMicroelectronics

STGW28IH125DF from STMicroelectronics is a robust N-channel IGBT ideal for high-power applications. It features a max VCEsat of 2.5V, 375W power dissipation, and operates up to 175 °C. Perfect for industrial drives and renewable energy systems.

COLLECTOR

60 A

1250 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

322 ns

2.5 V

STGWT28IH125DF by STMicroelectronics

STGWT28IH125DF

STMicroelectronics

STGWT28IH125DF from STMicroelectronics is a robust N-channel IGBT designed for high-efficiency applications. It features a max VCEsat of 2.5V, supports up to 375W power dissipation, and operates in extreme temps (-55 °C to 175 °C). Ideal for industrial motor control and power conversion.

COLLECTOR

60 A

1250 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

322 ns

2.5 V

STGWT20IH125DF by STMicroelectronics

STGWT20IH125DF

STMicroelectronics

STGWT20IH125DF from STMicroelectronics is a high-performance N-channel IGBT ideal for power applications. It features a max VCEsat of 2.5V, 1250V collector-emitter voltage, and handles up to 40A current. Its robust design suits industrial motor drives and renewable energy systems.

COLLECTOR

40 A

1250 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

259 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

285 ns

2.5 V

STGP30H65F by STMicroelectronics

STGP30H65F

STMicroelectronics

STMicroelectronics' STGP30H65F is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2.4V VCEsat. Ideal for POWER CONTROL applications, it has a toff of 234ns and ton of 64ns. The transistor operates b/w -55 °C to 175°C in a PLASTIC/EPOXY package with FLANGE MOUNT style.

COLLECTOR

60 A

650 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

234 ns

64 ns

2.4 V

STGD7NB120S-1 by STMicroelectronics

STGD7NB120S-1

STMicroelectronics

STGD7NB120S-1 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 10A IC, and 55W Pd. Ideal for MOTOR CONTROL applications due to its SILICON material, 150 °C max temp, and 840ns turn on time. Package: PLASTIC/EPOXY IN-LINE with THROUGH-HOLE terminals.

10 A

1200 V

SINGLE

5 V

20 V

TO-251

R-PSIP-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

55 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

840 ns

STGB3NB60SDT4 by STMicroelectronics

STGB3NB60SDT4

STMicroelectronics

STGB3NB60SDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 6A max collector current, and 70W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 4800ns.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

70 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

4800 ns

275 ns

STGP10NB37LZ by STMicroelectronics

STGP10NB37LZ

STMicroelectronics

STGP10NB37LZ by STMicroelectronics is an N-CHANNEL IGBT with 375V max collector-emitter voltage, 20A max collector current, and 125W max power dissipation. Primarily used in automotive ignition systems due to its single configuration with built-in diode and nominal turn-off time of 17800ns.

VOLTAGE CLAMPING

20 A

375 V

SINGLE WITH BUILT-IN DIODE

2.4 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

17800 ns

860 ns

STGFW20V60DF by STMicroelectronics

STGFW20V60DF

STMicroelectronics

STGFW20V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.2V, IC of 40A, and Pmax of 86.7W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 173ns and high operating temperature range (-55 to 175 °C).

ISOLATED

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

86.7 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

173 ns

49 ns

2.2 V

STGFW30V60DF by STMicroelectronics

STGFW30V60DF

STMicroelectronics

STGFW30V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 60A, and Pmax of 58W. Ideal for power control applications due to its fast turn-off time (toff) of 225ns and high collector-emitter voltage of 600V. Suitable for use in isolated case connections at temperatures ranging from -55 °C to 175°C.

ISOLATED

60 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

58 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

STGFW80V60F by STMicroelectronics

STGFW80V60F

STMicroelectronics

STGFW80V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 120A, and Ptot of 79W. Ideal for POWER CONTROL applications due to its fast turn-off time (262ns) and high operating temperature range (-55 to 175 °C).

ISOLATED

120 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

79 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

90 ns

2.3 V

STGW80V60F by STMicroelectronics

STGW80V60F

STMicroelectronics

STGW80V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V, IC of 120A, and Pmax of 469W. Ideal for power control applications due to its fast turn-off time (262ns) and high collector-emitter voltage (600V). Package style: FLANGE MOUNT.

120 A

600 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

90 ns

2.3 V

STGWT80V60F by STMicroelectronics

STGWT80V60F

STMicroelectronics

STGWT80V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 120A, and Pmax of 469W. Ideal for POWER CONTROL applications due to its fast ton of 90ns and toff of 262ns at a max VCE of 600V.

COLLECTOR

120 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

90 ns

2.3 V

STGW40NC60W by STMicroelectronics

STGW40NC60W

STMicroelectronics

STGW40NC60W by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

46 ns

STGW45NC60WD by STMicroelectronics

STGW45NC60WD

STMicroelectronics

STGW45NC60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 90A max collector current, and 285W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.

90 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

285 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

280 ns

46 ns

STGF10NC60SD by STMicroelectronics

STGF10NC60SD

STMicroelectronics

STGF10NC60SD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, a turn-off time of 560ns, and can handle up to 10A current. Ideal for applications in industrial motor drives and power converters.

ULTRA FAST

ISOLATED

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

560 ns

22.5 ns

STGP10NC60S by STMicroelectronics

STGP10NC60S

STMicroelectronics

STGP10NC60S from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, a power dissipation of 62.5W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various circuits.

21 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

62.5 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

560 ns

22.5 ns

STGB14NC60KT4 by STMicroelectronics

STGB14NC60KT4

STMicroelectronics

STGB14NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 25 A collector current, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic systems.

25 A

600 V

SINGLE

6.5 V

20 V

R-PDSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

DUAL

POWER CONTROL

SILICON

340 ns

31.5 ns

STGW35HF60WDI by STMicroelectronics

STGW35HF60WDI

STMicroelectronics

STGW35HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a turn-off time of just 295 ns, and can handle up to 200 W dissipation. Ideal for high-performance switching in industrial systems.

60 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGW45HF60WDI by STMicroelectronics

STGW45HF60WDI

STMicroelectronics

STGW45HF60WDI by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications requiring a single transistor with built-in diode in a rectangular package style.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

STGWA35HF60WDI by STMicroelectronics

STGWA35HF60WDI

STMicroelectronics

STGWA35HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 70A current capacity, and a fast turn-off time of 295ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGWA45HF60WDI by STMicroelectronics

STGWA45HF60WDI

STMicroelectronics

STGWA45HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max power dissipation of 310 W, operates up to 150 °C, and supports voltages up to 600 V. Ideal for applications requiring robust performance in demanding environments.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

310 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

STGD10NC60KT4 by STMicroelectronics

STGD10NC60KT4

STMicroelectronics

STGD10NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a turn-off time of 242 ns, and can handle up to 20 A. Ideal for compact designs with its surface mount configuration.

ULTRA FAST

20 A

600 V

SINGLE

6.5 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

60 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

242 ns

23 ns