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STGFW40V60DF

STMicroelectronics

STGFW40V60DF by STMicroelectronics

STGFW40V60DF from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 600V collector-emitter voltage, and operates at temperatures from -55 °C to 175°C. Ideal for high-performance switching in industrial systems.

Median Price

$2.592

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 491 parts In-Stock

1+ parts

$4.010

100+ parts

$2.208

1k+ parts

$1.517

10k+ parts

$1.361

491

$4.010

$2.208

$1.517

$1.361

Avnet

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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-

1,500

-

-

-

-

Verical

USA . 870 parts In-Stock

1+ parts

-

100+ parts

$1.174

1k+ parts

$1.029

10k+ parts

$0.982

870

-

$1.174

$1.029

$0.982

EBV Elektronik

Germany . 510 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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510

-

-

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-

Distributors (In-Stock)

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Digiode

USA . 2,550 parts In-Stock

1+ parts

$2.138

100+ parts

-

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-

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2,550

$2.138

-

-

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Vyrian

USA . 8,841 parts In-Stock

1+ parts

-

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-

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8,841

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Anansix

USA . 1,423 parts In-Stock

1+ parts

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1,423

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,809 parts In-Stock

1+ parts

$0.507

100+ parts

-

1k+ parts

$0.456

10k+ parts

-

1,809

$0.507

-

$0.456

-

MKK Technologies

India . 1,991 parts In-Stock

1+ parts

$0.953

100+ parts

-

1k+ parts

-

10k+ parts

-

1,991

$0.953

-

-

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DigiPath Technology Company

USA . 1,991 parts In-Stock

1+ parts

$0.953

100+ parts

-

1k+ parts

-

10k+ parts

-

1,991

$0.953

-

-

-

Corphita

USA . 3,124 parts In-Stock

1+ parts

$2.025

100+ parts

-

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-

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3,124

$2.025

-

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Microchip USA

USA . 5,279 parts In-Stock

1+ parts

$22.815

100+ parts

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5,279

$22.815

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Perfect Parts

USA . 21,134 parts In-Stock

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21,134

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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RC Electronics

USA . 2,683 parts In-Stock

1+ parts

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2,683

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Parana Technologies

USA . 1,771 parts In-Stock

1+ parts

-

100+ parts

$0.606

1k+ parts

-

10k+ parts

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1,771

-

$0.606

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-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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100+ parts

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500

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Overview

Elevate your power control solutions with the STGFW40V60DF from STMicroelectronics, a trusted leader in innovation and quality. This high-performance N-channel IGBT combines exceptional efficiency with robust reliability, making it ideal for demanding applications like motor drives and renewable energy systems. With its built-in diode and superior thermal management, enjoy reduced energy costs and enhanced device longevity—empowering your projects with unparalleled performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for various industrial applications.

Polarity or Channel Type: N-CHANNEL

N-channel configuration typically offers better performance and efficiency in power management applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode improves circuit efficiency and reduces component count, simplifying design and improving reliability.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, making it ideal for regulating large electrical loads.

Maximum VCEsat: 2.3 V

A low VCEsat value indicates higher efficiency during operation, resulting in less heat generation and energy loss.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into various circuit layouts and optimizes space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical stability and ease of handling during assembly and soldering.

Nominal Turn Off Time (toff): 241 ns

Fast turn-off time contributes to efficient switching and improved frequency response in power conversion applications.

No. of Terminals: 3

Three terminals simplify circuit design and implementation while still providing necessary functionality for power control.

Maximum Power Dissipation (Abs): 98.5 W

High power dissipation capability allows for reliable performance even in demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount design enhances attachment stability, ensuring secure placement in various operational environments.

Maximum Operating Temperature: 175 °C

High operating temperature capacity enables the device to function reliably in harsh conditions typically found in industrial settings.

Maximum Collector-Emitter Voltage: 600 V

A high maximum voltage rating allows the IGBT to handle substantial voltage loads, enhancing its versatility in high-power applications.

Transistor Element Material: SILICON

Silicon is a well-established semiconductor material known for its effective performance in power electronics.

Maximum Gate-Emitter Voltage: 20 V

A relatively high gate-emitter voltage allows for flexibility in control circuit design, accommodating various drive characteristics.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature expands the usability range, making it suitable for cold-climate or extreme environmental conditions.

Maximum Collector Current (IC): 80 A

Capable of handling significant current levels, this IGBT is ideal for high-power applications requiring substantial load management.

Maximum Gate-Emitter Threshold Voltage: 7 V

A moderate threshold voltage optimizes the switching behavior, ensuring effective gate control and system performance.

Terminal Position: SINGLE

Single terminal position simplifies the design and reduces the complexity of circuit board layouts.

Case Connection: ISOLATED

An isolated case connection enhances safety by preventing unintended electrical paths, reducing the risk of short circuits.

Nominal Turn On Time (ton): 73 ns

A fast turn-on time allows for rapid switching, improving overall system efficiency and performance in high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGFW40V60DF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

241 ns

Nominal Turn On Time (ton):

73 ns

Maximum VCEsat:

2.3 V

Trade Compliance

STGFW40V60DF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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