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STGD7NB120S-1

STMicroelectronics

STGD7NB120S-1 by STMicroelectronics

STGD7NB120S-1 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 10A IC, and 55W Pd. Ideal for MOTOR CONTROL applications due to its SILICON material, 150 °C max temp, and 840ns turn on time. Package: PLASTIC/EPOXY IN-LINE with THROUGH-HOLE terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,772 parts In-Stock

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8,772

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Digiode

USA . 1,412 parts In-Stock

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1,412

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Anansix

USA . 413 parts In-Stock

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413

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,456 parts In-Stock

1+ parts

$0.546

100+ parts

-

1k+ parts

$0.492

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1,456

$0.546

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$0.492

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MKK Technologies

India . 1,417 parts In-Stock

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$1.028

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$1.028

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DigiPath Technology Company

USA . 1,417 parts In-Stock

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$1.028

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1,417

$1.028

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Advanced Electronics

New Zealand . 300 parts In-Stock

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$1.703

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$1.550

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$1.396

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300

$1.703

$1.550

$1.396

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AZTECH Wire

Italy . 274 parts In-Stock

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$11.570

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274

$11.570

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Corphita

USA . 400 parts In-Stock

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400

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Parana Technologies

USA . 13 parts In-Stock

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$0.653

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13

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$0.653

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Perfect Parts

USA . 13 parts In-Stock

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Overview

Unleash the power of precision and reliability with the STGD7NB120S-1 from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-notch quality and cutting-edge technology in every product. The STGD7NB120S-1 falls under the category of Insulated Gate Bipolar Transistors (IGBT) and is specifically designed for motor control applications. With a maximum power dissipation of 55W and a maximum collector-emitter voltage of 1200V, this N-channel transistor offers exceptional performance and efficiency. Trust STMicroelectronics to provide you with the tools you need for success in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Offers efficient current conduction and control, making it suitable for various motor control applications.

Configuration: SINGLE

Simplifies circuit design and implementation, reducing complexity and potential points of failure.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and reliability in such scenarios.

Package Shape: RECTANGULAR

Facilitates easier mounting and integration into existing circuit designs, saving time and effort during installation.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections on the PCB, minimizing the risk of loose connections or disconnections.

Maximum Power Dissipation (Abs): 55 W

Can handle high power dissipation levels, making it suitable for demanding applications that require efficient heat dissipation.

Package Style (Meter): IN-LINE

Compact and space-saving design, suitable for applications where size constraints are a concern.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, ideal for applications where heat dissipation is a challenge.

Maximum Collector-Emitter Voltage: 1200 V

High voltage rating allows for compatibility with a wide range of power supply systems and motor control applications.

Transistor Element Material: SILICON

Provides excellent electrical properties and reliability, ensuring stable performance over extended periods of use.

Maximum Gate-Emitter Voltage: 20 V

Supports efficient control and modulation of the transistor, enabling precise motor control and operation.

Maximum Collector Current (IC): 10 A

Can handle high current levels, suitable for motor control applications that require higher power outputs.

Maximum Gate-Emitter Threshold Voltage: 5 V

Ensures reliable and consistent switching behavior, critical for precise motor control and operation.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity, ensuring secure and reliable connections on the PCB.

Terminal Position: SINGLE

Facilitates straightforward PCB layout design and soldering processes, reducing assembly complexity.

Nominal Turn On Time (ton): 840 ns

Fast turn-on time allows for quick and precise control over the switching operation, essential for efficient motor control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGD7NB120S-1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn On Time (ton):

840 ns

Trade Compliance

STGD7NB120S-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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