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STGFW30V60DF

STMicroelectronics

STGFW30V60DF by STMicroelectronics

STGFW30V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 60A, and Pmax of 58W. Ideal for power control applications due to its fast turn-off time (toff) of 225ns and high collector-emitter voltage of 600V. Suitable for use in isolated case connections at temperatures ranging from -55 °C to 175°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,598 parts In-Stock

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5,598

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Digiode

USA . 4,423 parts In-Stock

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4,423

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Anansix

USA . 2,155 parts In-Stock

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2,155

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.997

100+ parts

$0.907

1k+ parts

$0.818

10k+ parts

-

50

$0.997

$0.907

$0.818

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IDEA Electronic Components Group

UK . 1,761 parts In-Stock

1+ parts

$1.677

100+ parts

-

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$1.509

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1,761

$1.677

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$1.509

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MKK Technologies

India . 229 parts In-Stock

1+ parts

$3.154

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229

$3.154

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DigiPath Technology Company

USA . 229 parts In-Stock

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$3.154

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229

$3.154

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AZTECH Wire

Italy . 1,065 parts In-Stock

1+ parts

$12.900

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1,065

$12.900

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Parana Technologies

USA . 1,650 parts In-Stock

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$2.005

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1,650

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$2.005

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Corphita

USA . 1,650 parts In-Stock

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1,650

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Authorized Procurement Solutions

USA . 600 parts In-Stock

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600

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Overview

Unleash the power of innovation with the STGFW30V60DF by STMicroelectronics, a high-quality Insulated Gate Bipolar Transistor designed for power control applications. With its N-Channel configuration and built-in diode, this product offers unmatched reliability and performance. Experience seamless operation and efficient power management with a maximum collector-emitter voltage of 600V and a maximum gate-emitter voltage of 20V. Trust in STMicroelectronics' expertise to deliver cutting-edge solutions that exceed your expectations. Elevate your projects with the STGFW30V60DF and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control capabilities and allows for high-speed switching, increasing performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor package.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and efficiency in power management.

Maximum VCEsat: 2.3 V

Low saturation voltage results in lower power dissipation and improved efficiency in power control applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and connection in various systems, enhancing versatility and usability.

Terminal Form: THROUGH-HOLE

Allows for secure and stable connection to the circuit board, reducing the risk of disconnection or damage.

Nominal Turn Off Time (toff): 225 ns

Fast turn-off time enables quick switching transitions, improving overall performance and responsiveness.

No. of Terminals: 3

Simple and straightforward pin configuration simplifies installation and reduces chances of error in connections.

Maximum Power Dissipation (Abs): 58 W

High power dissipation capability allows the transistor to handle significant power levels without overheating or damage.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and heat dissipation, ensuring stable operation in demanding environments.

Maximum Operating Temperature: 175 °C

Wide operating temperature range makes the transistor suitable for various industrial and automotive applications.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating allows for reliable operation in high-power applications without breakdown or damage.

Transistor Element Material: SILICON

Silicon material offers good thermal performance, high reliability, and longevity, contributing to the product's overall quality.

Maximum Gate-Emitter Voltage: 20 V

Safe operating voltage for gate-emitter ensures reliable and stable performance of the transistor in power control applications.

Minimum Operating Temperature: -55 °C

Wide temperature range enables the transistor to function in extreme cold conditions, expanding its usage capabilities.

Maximum Collector Current (IC): 60 A

High collector current rating allows for handling of large power loads, suitable for heavy-duty applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

Threshold voltage ensures controlled switching behavior, preventing accidental activation or deactivation of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection process, reducing complexity and potential errors.

Case Connection: ISOLATED

Isolated case connection enhances electrical safety and reduces the risk of short circuits or malfunctions in the system.

Nominal Turn On Time (ton): 59 ns

Fast turn-on time enables quick response and activation, crucial for precise power control and efficient operation.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGFW30V60DF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

225 ns

Nominal Turn On Time (ton):

59 ns

Maximum VCEsat:

2.3 V

Trade Compliance

STGFW30V60DF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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