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STGP10NB37LZ

STMicroelectronics

STGP10NB37LZ by STMicroelectronics

STGP10NB37LZ by STMicroelectronics is an N-CHANNEL IGBT with 375V max collector-emitter voltage, 20A max collector current, and 125W max power dissipation. Primarily used in automotive ignition systems due to its single configuration with built-in diode and nominal turn-off time of 17800ns.

Median Price

$1.169

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 102 parts In-Stock

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$1.169

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$1.169

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$1.169

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$1.169

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$1.169

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$1.169

$1.169

Chip1Stop

Japan . 102 parts In-Stock

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$2.100

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Verical

USA . 102 parts In-Stock

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$1.169

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$1.169

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$1.169

102

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$1.169

$1.169

Distributors (In-Stock)

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Digiode

USA . 3,482 parts In-Stock

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$1.111

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Vyrian

USA . 12,066 parts In-Stock

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Anansix

USA . 385 parts In-Stock

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LWI Electronics Inc

India . 40 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.386

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$0.351

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$0.317

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100

$0.386

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$0.317

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IDEA Electronic Components Group

UK . 1,417 parts In-Stock

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$0.719

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$0.647

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$0.719

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$0.647

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Corphita

USA . 689 parts In-Stock

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$1.052

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MKK Technologies

India . 435 parts In-Stock

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$1.353

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DigiPath Technology Company

USA . 435 parts In-Stock

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$1.353

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AZTECH Wire

Italy . 717 parts In-Stock

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$14.160

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A-Z Elektronik GmbH

Germany . 6,612 parts In-Stock

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Perfect Parts

USA . 3,254 parts In-Stock

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Parana Technologies

USA . 1,903 parts In-Stock

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$0.860

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$0.860

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Overview

Elevate your automotive ignition systems with the STGP10NB37LZ Insulated Gate Bipolar Transistor from STMicroelectronics. Designed with precision and reliability in mind, this N-CHANNEL transistor offers a single configuration with a built-in diode for seamless integration. With a high maximum power dissipation of 125W and a nominal turn off time of 17800 ns, this transistor ensures optimal performance in demanding applications. Trust in STMicroelectronics' reputation for excellence in semiconductor manufacturing and experience the unparalleled value and benefits that the STGP10NB37LZ brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product suitable for rugged automotive applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and control, contributing to overall performance and reliability.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring reliable performance in demanding conditions.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation in automotive electronic systems.

Nominal Turn Off Time (toff): 17800 ns

Ensures efficient switching off, enhancing overall system performance.

No. of Terminals: 3

Provides necessary connections for proper functioning in automotive applications.

Maximum Power Dissipation (Abs): 125 W

Can handle high power levels, suitable for automotive ignition systems.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and heat dissipation in automotive environments.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures typically encountered in automotive applications.

Maximum Collector-Emitter Voltage: 375 V

Supports high voltage requirements, ensuring reliable operation in automotive circuits.

Transistor Element Material: SILICON

Provides good electrical properties and reliability for the transistor.

Maximum Collector Current (IC): 20 A

Capable of handling high current levels commonly found in automotive systems.

Maximum Gate-Emitter Threshold Voltage: 2.4 V

Allows for efficient control and switching of the transistor.

Terminal Finish: MATTE TIN

Ensures good electrical connections and corrosion resistance.

Terminal Position: SINGLE

Simplifies installation and circuit design for automotive applications.

Nominal Turn On Time (ton): 860 ns

Enables fast switching on, contributing to system efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGP10NB37LZ attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Additional Features:

VOLTAGE CLAMPING

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

375 V

Maximum Gate-Emitter Threshold Voltage:

2.4 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

17800 ns

Nominal Turn On Time (ton):

860 ns

Trade Compliance

STGP10NB37LZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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