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STGWT20H60DF

STMicroelectronics

STGWT20H60DF by STMicroelectronics

STGWT20H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 167W power dissipation. Ideal for power control applications due to its fast turn-on/off times and high collector-emitter voltage. Package style: FLANGE MOUNT, terminal form: THROUGH-HOLE, and operating temperature range: -55 to 175 °C.

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Vyrian

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Anansix

USA . 1,990 parts In-Stock

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Digiode

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IDEA Electronic Components Group

UK . 435 parts In-Stock

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$0.956

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MKK Technologies

India . 257 parts In-Stock

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$1.998

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DigiPath Technology Company

USA . 257 parts In-Stock

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AZTECH Wire

Italy . 136 parts In-Stock

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RC Electronics

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Perfect Parts

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Corphita

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Parana Technologies

USA . 382 parts In-Stock

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Overview

Experience the power of innovation with the STGWT20H60DF Insulated Gate Bipolar Transistor by STMicroelectronics. As a leader in semiconductor technology, STMicroelectronics offers top-quality products that exceed industry standards. Ideal for power control applications, this N-CHANNEL transistor with a built-in diode provides unmatched performance and reliability. With a maximum collector-emitter voltage of 600V and a maximum collector current of 40A, this transistor is designed to meet your most demanding requirements. Trust STMicroelectronics to deliver cutting-edge solutions that drive your success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance and higher efficiency compared to P-channel IGBTs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can improve overall system reliability.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance in such scenarios.

Maximum VCEsat: 2 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter terminals, leading to higher efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in various systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are suitable for soldering onto PCBs.

Nominal Turn Off Time (toff): 259 ns

Fast turn-off time ensures quick switching and helps reduce power losses during operation.

No. of Terminals: 3

Having 3 terminals allows for easy connectivity in circuits and ensures proper functionality.

Maximum Power Dissipation (Abs): 167 W

High power dissipation capability enables the IGBT to handle heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure installation and heat dissipation in high-power applications.

Maximum Operating Temperature: 175 °C

High operating temperature range allows for reliable performance in a variety of environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High breakdown voltage rating makes this IGBT suitable for high voltage applications.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and reliability, essential for power semiconductor devices.

Maximum Turn On Time (ton): 259 ns

Quick turn-on time ensures fast response and efficient operation in power control applications.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating provides robustness against voltage spikes and disturbances in the control circuit.

Minimum Operating Temperature: -55 °C

Low operating temperature range allows for reliable performance in extreme cold conditions.

Maximum Collector Current (IC): 40 A

High collector current rating allows for handling large currents without risking damage to the IGBT.

Maximum Gate-Emitter Threshold Voltage: 7 V

Low gate-emitter threshold voltage enables efficient control of the IGBT and reduces power losses during switching.

Terminal Position: SINGLE

Single terminal position simplifies wiring and connections, making installation easier for users.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation and electrical isolation in the system.

Nominal Turn On Time (ton): 55.9 ns

Fast turn-on time allows for quick response in power control applications, enhancing system efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGWT20H60DF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

259 ns

Maximum Turn On Time (ton):

259 ns

Nominal Turn On Time (ton):

55.9 ns

Maximum VCEsat:

2 V

Trade Compliance

STGWT20H60DF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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