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STGWT20IH125DF

STMicroelectronics

STGWT20IH125DF by STMicroelectronics

STGWT20IH125DF from STMicroelectronics is a high-performance N-channel IGBT ideal for power applications. It features a max VCEsat of 2.5V, 1250V collector-emitter voltage, and handles up to 40A current. Its robust design suits industrial motor drives and renewable energy systems.

Median Price

$3.570

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 613 parts In-Stock

1+ parts

$3.570

100+ parts

$1.640

1k+ parts

$1.530

10k+ parts

$1.330

613

$3.570

$1.640

$1.530

$1.330

DigiKey

USA . 370 parts In-Stock

1+ parts

$3.570

100+ parts

$1.631

1k+ parts

$1.303

10k+ parts

$1.163

370

$3.570

$1.631

$1.303

$1.163

Arrow

USA . 600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.396

10k+ parts

$1.259

600

-

-

$1.396

$1.259

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,442 parts In-Stock

1+ parts

$2.945

100+ parts

-

1k+ parts

-

10k+ parts

-

3,442

$2.945

-

-

-

Vyrian

USA . 6,423 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,423

-

-

-

-

Chip Stock

USA . 4,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,800

-

-

-

-

Anansix

USA . 558 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

558

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 169 parts In-Stock

1+ parts

$1.107

100+ parts

-

1k+ parts

$0.996

10k+ parts

-

169

$1.107

-

$0.996

-

MKK Technologies

India . 959 parts In-Stock

1+ parts

$2.081

100+ parts

-

1k+ parts

-

10k+ parts

-

959

$2.081

-

-

-

DigiPath Technology Company

USA . 959 parts In-Stock

1+ parts

$2.081

100+ parts

-

1k+ parts

-

10k+ parts

-

959

$2.081

-

-

-

Corphita

USA . 1,800 parts In-Stock

1+ parts

$2.790

100+ parts

-

1k+ parts

-

10k+ parts

-

1,800

$2.790

-

-

-

Microchip USA

USA . 145 parts In-Stock

1+ parts

$23.595

100+ parts

-

1k+ parts

-

10k+ parts

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145

$23.595

-

-

-

RC Electronics

USA . 2,833 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,833

-

-

-

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iodParts Technologies Inc.

India . 2,329 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,329

-

-

-

-

Parana Technologies

USA . 1,379 parts In-Stock

1+ parts

-

100+ parts

$1.323

1k+ parts

-

10k+ parts

-

1,379

-

$1.323

-

-

Authorized Procurement Solutions

USA . 727 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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727

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-

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Kepictronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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100

-

-

-

-

Overview

Unlock unparalleled performance with the STGWT20IH125DF from STMicroelectronics, a leader in power semiconductor technology. This rugged N-channel IGBT combines exceptional efficiency and reliability in a compact design, making it ideal for demanding applications like motor drives and renewable energy systems. With built-in protection features and high thermal management, you can trust this powerhouse to enhance your projects while delivering significant energy savings and optimized performance. Experience the STMicroelectronics difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material enhances durability and provides good thermal stability, making it suitable for various application environments.

Polarity or Channel Type: N-CHANNEL

N-channel configuration is commonly preferred for high-efficiency applications due to lower on-resistance and higher performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and improves efficiency by reducing component count and enhancing heat dissipation.

Maximum VCEsat: 2.5 V

A low VCEsat means better efficiency during operation, reducing power losses and heat generation, which is critical in power electronic applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, facilitating compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures robust mechanical connection and is ideal for high-power applications, enhancing reliability.

Nominal Turn Off Time (toff): 285 ns

A relatively short turn-off time allows for fast switching capabilities, which is essential in high-frequency and high-efficiency applications.

No. of Terminals: 3

The three-terminal configuration provides simplicity in design while catering to essential control and power management needs.

Maximum Power Dissipation (Abs): 259 W

High maximum power dissipation capability allows the device to handle demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount design offers excellent thermal management and ease of installation, ideal for heavy-duty industrial applications.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature ensures reliable performance in extreme environments, making it suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 1250 V

The capability to endure high collector-emitter voltage makes this IGBT suitable for high-voltage applications, ensuring versatility.

Transistor Element Material: SILICON

Silicon provides good thermal properties and efficiency, making it a suitable choice for high-performance power electronics.

Maximum Gate-Emitter Voltage: 20 V

Generous gate-emitter voltage rating allows for flexibility in driving circuits, accommodating various controller requirements.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures reliable operation in cold environments, broadening application possibilities.

Maximum Collector Current (IC): 40 A

A high collector current rating allows this IGBT to handle significant load currents, making it suitable for heavy-duty applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

The 7 V threshold gives a good balance between reliable switching and sensitivity, ensuring proper operation with a range of controllers.

Terminal Position: SINGLE

The single terminal position simplifies integration into circuits, allowing for straightforward design and assembly.

Case Connection: COLLECTOR

Collector case connection ensures effective heat dissipation and enhances electrical performance during operation.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGWT20IH125DF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1250 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

285 ns

Maximum VCEsat:

2.5 V

Trade Compliance

STGWT20IH125DF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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