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STGB3NB60SDT4

STMicroelectronics

STGB3NB60SDT4 by STMicroelectronics

STGB3NB60SDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 6A max collector current, and 70W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 4800ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,585 parts In-Stock

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4,585

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Digiode

USA . 4,381 parts In-Stock

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Anansix

USA . 2,481 parts In-Stock

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2,481

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Distributors (Availability)

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.607

100+ parts

$0.552

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$0.498

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200

$0.607

$0.552

$0.498

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IDEA Electronic Components Group

UK . 1,996 parts In-Stock

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$0.693

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-

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$0.623

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1,996

$0.693

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$0.623

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MKK Technologies

India . 2,278 parts In-Stock

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$1.303

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2,278

$1.303

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DigiPath Technology Company

USA . 2,278 parts In-Stock

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$1.303

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2,278

$1.303

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AZTECH Wire

Italy . 959 parts In-Stock

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$12.850

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959

$12.850

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Component Stockers USA

USA . 768 parts In-Stock

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$99.990

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768

$99.990

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Kepictronics

USA . 30,000 parts In-Stock

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RC Electronics

USA . 10,985 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,497 parts In-Stock

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Corphita

USA . 789 parts In-Stock

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789

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Parana Technologies

USA . 414 parts In-Stock

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$0.828

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414

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$0.828

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Overview

Elevate your motor control applications with the STGB3NB60SDT4 Insulated Gate Bipolar Transistor by STMicroelectronics. Crafted with precision and expertise, this N-CHANNEL transistor offers unparalleled quality and performance. With a built-in diode and a maximum collector-emitter voltage of 600V, this transistor is designed to optimize power dissipation while ensuring efficient operation. Say goodbye to inefficiencies and hello to seamless motor control with the STGB3NB60SDT4 - the ultimate solution for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the IGBT, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

Offers high efficiency and low on-state resistance, making it suitable for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and improves overall efficiency by integrating a diode within the IGBT.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, providing excellent performance and reliability in such scenarios.

Maximum Power Dissipation (Abs): 70 W

Allows for handling high power levels, making it suitable for demanding applications where power dissipation is critical.

Maximum Collector-Emitter Voltage: 600 V

Features a high voltage rating, enabling it to safely operate in applications that require high collector-emitter voltage levels.

Maximum Gate-Emitter Threshold Voltage: 5 V

Provides a low gate-emitter threshold voltage, allowing for efficient switching and control of the IGBT.

Nominal Turn On Time (ton): 275 ns

Offers fast turn on time, enabling quick response and efficient operation in motor control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB3NB60SDT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

4800 ns

Nominal Turn On Time (ton):

275 ns

Trade Compliance

STGB3NB60SDT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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