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STGD10NC60KT4

STMicroelectronics

STGD10NC60KT4 by STMicroelectronics

STGD10NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a turn-off time of 242 ns, and can handle up to 20 A. Ideal for compact designs with its surface mount configuration.

Median Price

$1.108

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,479 parts In-Stock

1+ parts

$0.845

100+ parts

-

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10k+ parts

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2,479

$0.845

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Chip1Stop

Japan . 2,479 parts In-Stock

1+ parts

$1.370

100+ parts

-

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2,479

$1.370

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Verical

USA . 2,479 parts In-Stock

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2,479

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Distributors (In-Stock)

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Digiode

USA . 2,927 parts In-Stock

1+ parts

$0.803

100+ parts

-

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2,927

$0.803

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Vyrian

USA . 8,346 parts In-Stock

1+ parts

-

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8,346

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Connector Distribution Corp

USA . 2,000 parts In-Stock

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2,000

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Right Parts Inc.

USA . 2,000 parts In-Stock

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2,000

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Anansix

USA . 689 parts In-Stock

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689

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Distributors (Availability)

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.366

100+ parts

$0.333

1k+ parts

$0.300

10k+ parts

-

10

$0.366

$0.333

$0.300

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Corphita

USA . 3,192 parts In-Stock

1+ parts

$0.760

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3,192

$0.760

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IDEA Electronic Components Group

UK . 1,945 parts In-Stock

1+ parts

$1.527

100+ parts

-

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$1.374

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1,945

$1.527

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$1.374

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MKK Technologies

India . 1,203 parts In-Stock

1+ parts

$2.872

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1,203

$2.872

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DigiPath Technology Company

USA . 1,203 parts In-Stock

1+ parts

$2.872

100+ parts

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1,203

$2.872

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AZTECH Wire

Italy . 300 parts In-Stock

1+ parts

$14.300

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300

$14.300

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Parana Technologies

USA . 479 parts In-Stock

1+ parts

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100+ parts

$1.826

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479

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$1.826

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Overview

Elevate your power control solutions with the STGD10NC60KT4 from STMicroelectronics, a leader in semiconductor innovation. This high-performance IGBT excels in efficiency and reliability, perfect for demanding applications like motor drives and renewable energy systems. With its robust design and fast switching times, you'll benefit from enhanced thermal management and reduced energy losses. Trust in STMicroelectronics for quality that drives your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides durability and resistance to environmental factors, making the IGBT suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel configuration generally allows for higher efficiency and faster switching speeds, making this IGBT ideal for power control applications.

Configuration: SINGLE

Having a single configuration simplifies circuit design and can reduce the overall footprint in power electronics systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT can handle high voltages and currents, making it suitable for industrial use.

Surface Mount: YES

Surface mount technology allows for compact design and easier integration into automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs, facilitating efficient layout in electronic designs.

Terminal Form: GULL WING

Gull wing terminals provide enhanced mechanical stability and solder reliability, ensuring long-term performance in electronic circuits.

Nominal Turn Off Time (toff): 242 ns

A low turn off time enhances the switching performance, reducing heat generation and improving overall efficiency in power applications.

No. of Terminals: 2

Two terminals streamline the connection process, making this device easy to incorporate into existing designs.

Maximum Power Dissipation (Abs): 60 W

A maximum power dissipation of 60 watts indicates the ability to handle substantial power levels, suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for space-saving solutions in compact electronic designs.

Maximum Operating Temperature: 150 °C

Operating at high temperatures ensures reliability under challenging environmental conditions, broadening application possibilities.

Maximum Collector-Emitter Voltage: 600 V

With a collector-emitter voltage of 600 V, this IGBT can be used in high-voltage applications, expanding its versatility in power electronics.

Transistor Element Material: SILICON

Silicon as the material contributes to good thermal and electrical performance, which is critical for efficient energy conversion.

Maximum Gate-Emitter Voltage: 20 V

A maximum gate-emitter voltage of 20 V allows for robust control of the IGBT, providing flexibility in driving circuits.

Maximum Collector Current (IC): 20 A

The ability to handle a maximum collector current of 20 A makes this IGBT suitable for various high-current applications.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

A low threshold voltage improves control over the switching action, which can lead to faster response times.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and corrosion resistance, ensuring long-term reliability in electronic applications.

Terminal Position: SINGLE

Single terminal positioning allows for straightforward integration into circuit boards, reducing assembly complexity.

Nominal Turn On Time (ton): 23 ns

A short turn on time enhances the performance of the IGBT in high-frequency applications, allowing for more efficient power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGD10NC60KT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Additional Features:

ULTRA FAST

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

242 ns

Nominal Turn On Time (ton):

23 ns

Trade Compliance

STGD10NC60KT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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