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STMicroelectronics Insulated Gate Bipolar Transistors (IGBT) 292

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGP3NB60HD by STMicroelectronics

STGP3NB60HD

STMicroelectronics

STGP3NB60HD by STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 70 W, and fast switching times (ton: 16 ns, toff: 168 ns). Its flange mount design ensures reliable performance in demanding environments.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

168 ns

16 ns

STGP10NB60SFP by STMicroelectronics

STGP10NB60SFP

STMicroelectronics

STGP10NB60SFP from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 31.5 W, and operates up to 150 °C. Its through-hole design ensures easy integration in various systems.

ISOLATED

20 A

600 V

SINGLE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

31.5 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

1160 ns

STGB3NB60KDT4 by STMicroelectronics

STGB3NB60KDT4

STMicroelectronics

STGB3NB60KDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 10A collector current, and fast switching times (ton: 19ns, toff: 220ns). Ideal for applications in energy conversion and motor drives.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

220 ns

19 ns

STGB7NB60KDT4 by STMicroelectronics

STGB7NB60KDT4

STMicroelectronics

STGB7NB60KDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 14A collector current, and operates at up to 150 °C. Ideal for applications requiring high efficiency in compact designs.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

95 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

202 ns

21 ns

STGP3NB60KD by STMicroelectronics

STGP3NB60KD

STMicroelectronics

STGP3NB60KD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 220ns, and can handle up to 68W dissipation. Ideal for high-performance switching in industrial systems.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

220 ns

19 ns

STGP7NB60KD by STMicroelectronics

STGP7NB60KD

STMicroelectronics

STGP7NB60KD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 202ns. Ideal for high-performance switching in industrial systems.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

95 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

202 ns

21 ns

STGP12NB60HD by STMicroelectronics

STGP12NB60HD

STMicroelectronics

STGP12NB60HD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, a power dissipation of 100W, and fast switching times (ton: 51ns, toff: 295ns). Its robust design ensures reliable performance in demanding environments.

30 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

295 ns

51 ns

STGB7NB40LZT4 by STMicroelectronics

STGB7NB40LZT4

STMicroelectronics

STGB7NB40LZT4 from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 370 V, power dissipation of 100 W, and operates at up to 175 °C. This surface-mount device ensures efficient performance with built-in diode and resistor.

VOLTAGE CLAMPING

COLLECTOR

14 A

370 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.2 V

12 V

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

8000 ns

5400 ns

STGE200NB60S by STMicroelectronics

STGE200NB60S

STMicroelectronics

STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.

ISOLATED

200 A

600 V

SINGLE

20 V

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

600 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

4600 ns

170 ns

1.6 V

STGW40NC60V by STMicroelectronics

STGW40NC60V

STMicroelectronics

STGW40NC60V from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a nominal turn-off time of 247 ns, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

80 A

600 V

SINGLE

5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

61 ns

STGW20NB60KD by STMicroelectronics

STGW20NB60KD

STMicroelectronics

STGW20NB60KD from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 150W, and fast switching times (ton: 76ns, toff: 280ns). Its robust design ensures reliable performance in demanding environments.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

280 ns

76 ns

STGB3NB60FDT4 by STMicroelectronics

STGB3NB60FDT4

STMicroelectronics

STGB3NB60FDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and fast switching times (ton: 16.5ns, toff: 535ns). Its compact design ensures efficient performance in surface mount configurations.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

R-PSSO-G2

e0

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGP3NB60FD by STMicroelectronics

STGP3NB60FD

STMicroelectronics

STGP3NB60FD by STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGP3NB60F by STMicroelectronics

STGP3NB60F

STMicroelectronics

STGP3NB60F from STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 68 W, and operates at up to 150 °C. Its fast switching times (ton: 16.5 ns, toff: 535 ns) enhance efficiency in various systems.

6 A

600 V

SINGLE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGF3NB60FD by STMicroelectronics

STGF3NB60FD

STMicroelectronics

STGF3NB60FD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 25W, and a turn-off time of just 535ns. This robust device operates efficiently up to 150 °C.

ISOLATED

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGB20NB37LZT4 by STMicroelectronics

STGB20NB37LZT4

STMicroelectronics

STGB20NB37LZT4 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max power dissipation of 200W, a collector current of 40A, and operates at up to 175 °C. Its compact surface mount design ensures efficient thermal management.

COLLECTOR

40 A

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2 V

R-PSSO-G2

e3

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

15000 ns

2900 ns

STGB12NB60KDT4 by STMicroelectronics

STGB12NB60KDT4

STMicroelectronics

STGB12NB60KDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and fast switching times (toff: 461ns, ton: 39.5ns). Its compact design ensures efficient performance in surface mount configurations.

30 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

461 ns

39.5 ns

STGP12NB60KD by STMicroelectronics

STGP12NB60KD

STMicroelectronics

STGP12NB60KD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and a turn-off time of 461ns. This robust device operates efficiently at up to 150 °C.

30 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

461 ns

39.5 ns

STGB10NB40LZT4 by STMicroelectronics

STGB10NB40LZT4

STMicroelectronics

STGB10NB40LZT4 from STMicroelectronics is an N-channel IGBT ideal for automotive ignition applications. It features a max collector-emitter voltage of 380V, power dissipation of 150W, and operates at up to 175 °C. Its compact design ensures efficient performance in demanding environments.

COLLECTOR

20 A

380 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.2 V

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

12000 ns

1570 ns

STGP100N30 by STMicroelectronics

STGP100N30

STMicroelectronics

STMicroelectronics' STGP100N30 is an N-CHANNEL IGBT with 330V VCE, 90A IC, and 250W Ptot. Ideal for general purpose switching applications due to its fast 310ns turn-off time and max operating temp of 150°C. Package style is flange mount with through-hole terminals.

90 A

330 V

SINGLE

5.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GENERAL PURPOSE SWITCHING

SILICON

310 ns

STGD10NC60HDT4 by STMicroelectronics

STGD10NC60HDT4

STMicroelectronics

STGD10NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 62W max power dissipation. Ideal for power control applications, it features a built-in diode, 247ns turn-off time, and operates up to 150°C.

COLLECTOR

20 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-252AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

62 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

247 ns

19 ns

STGD3NB60HDT4 by STMicroelectronics

STGD3NB60HDT4

STMicroelectronics

STGD3NB60HDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 50W, and fast switching times (ton: 25ns, toff: 168ns). This compact device ensures efficient performance in demanding environments.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-252AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

50 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

168 ns

25 ns

STGB7NC60HDT4 by STMicroelectronics

STGB7NC60HDT4

STMicroelectronics

STGB7NC60HDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 25A collector current, and a fast turn-off time of 221ns. Ideal for high-performance switching in compact designs.

25 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

POWER CONTROL

SILICON

221 ns

25.5 ns

STGD5NB120SZ-1 by STMicroelectronics

STGD5NB120SZ-1

STMicroelectronics

STGD5NB120SZ-1 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, 10 A collector current, and operates at up to 150 °C. Its built-in diode enhances performance in various electronic systems.

COLLECTOR

10 A

1200 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5 V

20 V

TO-251AA

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

55 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

14100 ns

850 ns

STGF20NB60S by STMicroelectronics

STGF20NB60S

STMicroelectronics

STGF20NB60S by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 24A max collector current, and 40W max power dissipation. Ideal for motor control applications due to its single configuration and fast turn-on time of 162ns.

ISOLATED

24 A

600 V

SINGLE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

40 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

3600 ns

162 ns

STGF7NC60HD by STMicroelectronics

STGF7NC60HD

STMicroelectronics

STGF7NC60HD by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 221ns, and operates at up to 150 °C. Its robust design ensures efficient performance in demanding environments.

ISOLATED

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

221 ns

25.5 ns

STGY40NC60VD by STMicroelectronics

STGY40NC60VD

STMicroelectronics

STMicroelectronics' STGY40NC60VD is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 260W Ptot. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and a turn-off time of 247ns. The package is RECTANGULAR in shape with THROUGH-HOLE terminals.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

61 ns

STGW19NC60W by STMicroelectronics

STGW19NC60W

STMicroelectronics

STGW19NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 140W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.

42 A

600 V

SINGLE

5.75 V

20 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

140 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

204 ns

33 ns

STGB10NB60ST4 by STMicroelectronics

STGB10NB60ST4

STMicroelectronics

STGB10NB60ST4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 29A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

29 A

600 V

SINGLE

5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

POWER CONTROL

SILICON

3100 ns

1160 ns

STGP7NC60H by STMicroelectronics

STGP7NC60H

STMicroelectronics

STGP7NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 25 A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

25 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

221 ns

25.5 ns

STGD6NC60HT4 by STMicroelectronics

STGD6NC60HT4

STMicroelectronics

STGD6NC60HT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 15A collector current, and operates at up to 150 °C. Ideal for applications requiring fast switching and high power dissipation.

15 A

600 V

SINGLE

5.75 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

222 ns

17.3 ns

STGF14NC60KD by STMicroelectronics

STGF14NC60KD

STMicroelectronics

STGF14NC60KD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 11A max collector current, and 25W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 340ns.

ULTRA FAST

ISOLATED

11 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

340 ns

31.5 ns

STGW35HF60W by STMicroelectronics

STGW35HF60W

STMicroelectronics

STGW35HF60W from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 200 W power dissipation, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

LOW CONDUCTION LOSS

60 A

600 V

SINGLE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGP30NC60W by STMicroelectronics

STGP30NC60W

STMicroelectronics

STGP30NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, 60 A collector current, and fast switching times (ton: 42.5 ns, toff: 189 ns). Its robust design supports high power dissipation up to 200 W at temperatures up to 150 °C.

60 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

189 ns

42.5 ns

STGW30NC60W by STMicroelectronics

STGW30NC60W

STMicroelectronics

STGW30NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 200 W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.

60 A

600 V

SINGLE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

189 ns

42.5 ns

STGB6NC60HDT4 by STMicroelectronics

STGB6NC60HDT4

STMicroelectronics

STGB6NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its fast turn-off time of 222ns and built-in diode configuration. Suitable for surface mount with a small outline package style.

15 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

R-PSSO-G2

e3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

222 ns

17.3 ns

STGW39NC60VD by STMicroelectronics

STGW39NC60VD

STMicroelectronics

STGW39NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 366ns.

ISOLATED

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

366 ns

46 ns

STGP10NC60H by STMicroelectronics

STGP10NC60H

STMicroelectronics

STGP10NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 60 W, and fast switching times (ton: 19 ns, toff: 247 ns). Ideal for high-temperature environments with a max operating temp of 150 °C.

20 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

60 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

19 ns

STGIPL14K60 by STMicroelectronics

STGIPL14K60

STMicroelectronics

STGIPL14K60 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 2.5V max, and 14A IC. Ideal for MOTOR CONTROL applications, it has a turn-off time of 425ns and operates up to 125°C. Package: PLASTIC/EPOXY, RECTANGULAR shape with 38 terminals in THROUGH-HOLE form.

ISOLATED

14 A

600 V

COMPLEX

R-PDIP-T38

e3

6

38

125 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

44 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

DUAL

MOTOR CONTROL

SILICON

425 ns

400 ns

2.5 V

STGW40N120KD by STMicroelectronics

STGW40N120KD

STMicroelectronics

STGW40N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 240W max power dissipation. Ideal for motor control applications due to its built-in diode and fast turn-off time of 564ns. Package style is flange mount with through-hole terminals.

COLLECTOR

80 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

25 V

TO-247

R-PSFM-T3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

240 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

564 ns

83 ns

STGW35NB60SD by STMicroelectronics

STGW35NB60SD

STMicroelectronics

STGW35NB60SD from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a turn-off time of just 3600 ns. This robust device operates efficiently up to 150 °C.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-247AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

3600 ns

153 ns

STGB35N35LZ-1 by STMicroelectronics

STGB35N35LZ-1

STMicroelectronics

STGB35N35LZ-1 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 380V, a power dissipation of 176W, and operates at up to 175 °C. Its built-in diode enhances efficiency in various electronic circuits.

VOLTAGE CLAMPING

COLLECTOR

40 A

380 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

12 V

TO-262AA

R-PSIP-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

176 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

37000 ns

7600 ns

STGB35N35LZT4 by STMicroelectronics

STGB35N35LZT4

STMicroelectronics

STGB35N35LZT4 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 380V, 40A collector current, and operates at up to 175 °C. Its compact design ensures efficient performance in surface mount configurations.

VOLTAGE CLAMPING

COLLECTOR

40 A

380 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

12 V

TO-263AA

R-PDSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

176 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

DUAL

30

POWER CONTROL

SILICON

37000 ns

7600 ns

STGP35N35LZ by STMicroelectronics

STGP35N35LZ

STMicroelectronics

STGP35N35LZ from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 380V, 40A collector current, and operates at up to 175 °C. Ideal for high-performance switching in industrial systems.

VOLTAGE CLAMPING

COLLECTOR

40 A

380 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

12 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

176 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

37000 ns

7600 ns

STGF19NC60HD by STMicroelectronics

STGF19NC60HD

STMicroelectronics

STGF19NC60HD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, a turn-off time of 272ns, and handles up to 16A current. Ideal for applications in industrial motor drives and power converters.

ISOLATED

16 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

35 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

272 ns

32 ns

STGB6NC60HT4 by STMicroelectronics

STGB6NC60HT4

STMicroelectronics

STGB6NC60HT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 15A collector current, and fast switching times (toff: 222ns, ton: 17.3ns). Ideal for compact designs with its surface mount configuration.

15 A

600 V

SINGLE

5.75 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

222 ns

17.3 ns

STGSB200M65DF2AG by STMicroelectronics

STGSB200M65DF2AG

STMicroelectronics

STGSB200M65DF2AG from STMicroelectronics is a high-performance N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05V, supports up to 216A collector current, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management and reliability.

ISOLATED

216 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PDSO-G9

1

9

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

714 W

AEC-Q101; UL RECOGNIZED

YES

GULL WING

DUAL

NOT SPECIFIED

POWER CONTROL

SILICON

412.6 ns

193.6 ns

2.05 V

STGW15M120DF3 by STMicroelectronics

STGW15M120DF3

STMicroelectronics

STGW15M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and has a max power dissipation of 259W. Ideal for high-performance switching in industrial systems.

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

259 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

406 ns

39 ns

2.3 V