Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STGB35N35LZ-1 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 380V, a power dissipation of 176W, and operates at up to 175 °C. Its built-in diode enhances efficiency in various electronic circuits.
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The use of plastic/epoxy for the package body provides excellent insulation properties, making it durable and suitable for various environmental conditions.
N-channel IGBTs are known for lower on-resistance and better performance, making them ideal for power control applications.
This configuration offers versatility and enhances efficiency by providing integrated components that simplify circuit design.
Designed specifically for power control, this IGBT is optimized for high-power applications, ensuring reliable and efficient operation.
A rectangular package shape allows for efficient space utilization on circuit boards, facilitating easier integration into designs.
Through-hole terminals provide strong mechanical support and reliable electrical connections, making installation straightforward and secure.
A relatively long turn-off time can provide improved switching performance in certain applications, suitable for high-power contexts.
Three terminals indicate a simple and efficient design, enabling straightforward connections and reducing complexity in circuitry.
With a maximum power dissipation of 176 W, this IGBT can handle substantial loads effectively, making it a strong choice for high-performance systems.
An in-line package style allows for better airflow and heat dissipation, enhancing the overall reliability of the component in demanding applications.
This high maximum operating temperature ensures that the IGBT can perform well in harsh environments, extending its applicability and lifespan.
A high collector-emitter voltage rating allows this IGBT to be used in various high-voltage applications, boosting versatility.
Silicon as the transistor material ensures good conductivity and reliability, making this IGBT suitable for a wide range of electronic applications.
A maximum gate-emitter voltage of 12V allows for easy interfacing with standard logic circuits, providing flexibility in design.
With a maximum collector current of 40 A, this IGBT is capable of handling significant current loads, perfect for power-intensive applications.
A low gate-emitter threshold voltage means this IGBT can be activated with standard logic levels, simplifying control circuitry.
A single terminal position simplifies the installation process and helps to reduce assembly errors during manufacturing.
The collector case connection enables efficient heat dissipation and maintains stable operating temperatures, which is crucial for performance.
A faster turn-on time (ton) enhances switching performance, resulting in improved efficiency and faster response in power control applications.
Insulated Gate Bipolar Transistors (IGBT) STGB35N35LZ-1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
STGB35N35LZ-1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - IPD/15/9345 04/Aug/2015
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
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Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
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President, Sales & Marketing
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Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
BSS138BK,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
LM317BD2TG
Onsemi
LM317BD2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max load regulation of 5.8%. Operating temperature ranges from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact designs.
BSS138
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
OPA2277UA/2K5E4
Texas Instruments
OPA2277UA/2K5E4 by Texas Instruments is a dual operational amplifier with low-offset and micropower features. It has a max input offset voltage of 100uV, nominal common mode reject ratio of 140dB, and min slew rate of 0.8V/us. Ideal for industrial applications requiring precise signal amplification in compact designs.
INA826AIDGKR
INA826AIDGKR by Texas Instruments is an instrumentation amplifier with 150uV max input offset voltage, 0.095uA max average bias current, and 1MHz nominal bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode rejection ratio of 120dB.
TM4C1294NCPDTI3
TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
LL4148
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148W-T
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Amphenol
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body or Shell Style: RECEPTACLE; Body Length: 1.228 inch; No. of Rows Loaded: 2;
Inchange Semiconductor
Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;
1N4148WS
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Weitron Technology
MMSZ5245BT1G
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
DS18B20Z+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Body Width: 3.9 inch; Maximum Supply Voltage: 5.5 V;
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
BAV99
Electronic Devices
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
EU2B-YS3203F
Idec
ROTARY SWITCH;
2N7002
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
IKW50N65F5FKSA1
Infineon Technologies
IKW50N65F5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V and IC of 80A, ideal for POWER CONTROL applications. It has a toff of 205ns, ton of 35ns, and can handle up to 650V. The transistor operates b/w -40°C to 175°C, making it suitable for high-power systems requiring fast switching speeds.
HGTG11N120CND
HGTG11N120CND by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 43A. It has a nominal turn-off time of 570ns and a turn-on time of 33ns, making it ideal for motor control applications. The package style is flange mount with through-hole terminals in a rectangular shape.
2MBI150NC-120
Fuji Electric
Fuji Electric's 2MBI150NC-120 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.3V, IC of 150A, and Pmax of 1100W. Ideal for POWER CONTROL applications due to its fast ton (650ns) and toff (850ns) times.
APT80GP60B2G
Microchip Technology
APT80GP60B2G by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 284ns and a turn-on time of 87ns, making it ideal for power control applications requiring fast switching capabilities. The transistor comes in a rectangular package style with through-hole terminals, suitable for high-power electronic systems operating at temperatures up to 150°C.
FZ1000R33HL3BPSA1
FZ1000R33HL3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 3300V. It has a nominal turn off time of 4700ns and a nominal turn on time of 1050ns. This IGBT is commonly used in applications requiring high voltage switching capabilities.
FF450R12KE4HOSA1
Infineon's FF450R12KE4HOSA1 IGBT features N-CHANNEL polarity, 2 elements with diode in series configuration. With VCEsat of 2.15V and IC of 520A, it suits high-power applications like motor drives and renewable energy systems. Operating at up to 150°C, it offers fast turn-off time (toff) of 800ns for efficient power control.
IKW30N65EL5XKSA1
IKW30N65EL5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 650V and Max Collector Current of 85A. It has a Nominal Turn Off Time of 520ns and Nominal Turn On Time of 44ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals, suitable for FLANGE MOUNT installation.
TSG60N100CEC0
Taiwan Semiconductor
TSG60N100CEC0 by Taiwan Semiconductor is an N-CHANNEL IGBT with 1000V max collector-emitter voltage and 60A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 1510ns.
APT50GP60J
Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Case Connection: ISOLATED; Transistor Element Material: SILICON;
HGTD3N60C3S9A
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Nominal Turn Off Time (toff): 325 ns; Case Connection: COLLECTOR;
IGB50N65S5ATMA1
IGB50N65S5ATMA1 by Infineon is an N-CHANNEL IGBT for power control applications. It has a max VCEsat of 1.7V, IC of 80A, and toff of 215ns. With a package style of SMALL OUTLINE and operating temperature range from -40 to 175 °C, it offers efficient power management in various electronic systems.
SKM800GA176D
Semikron International
SKM800GA176D by Semikron is an N-CHANNEL IGBT with a max VCEsat of 2.45V and IC of 830A. Ideal for power control applications, it has a toff of 1190ns and ton of 320ns. This single transistor with built-in diode operates at up to 150°C and features a collector-emitter voltage of 1700V.
FGH30S130P
FGH30S130P by Onsemi is an N-CHANNEL IGBT with 1300V VCE, 60A IC, and 500W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and operates up to 175°C. With a fast tf of 210ns and toff of 905ns, this IGBT offers efficient switching performance in a rectangular package with through-hole terminals.
IRGR2B60KDTRLPBF
IRGR2B60KDTRLPBF by Infineon Technologies is an N-CHANNEL IGBT with 25 ns rise time and 75 ns fall time. It has a max power dissipation of 35 W, operating temperature up to 150°C, and can handle a collector-emitter voltage of 600 V. Ideal for applications requiring high-speed switching and efficient power control in various electronic systems.
IGW50N60TXK
IGW50N60TXK by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations at up to 175°C.
IRG4PC50FDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;
APT30GP60BDQ1G
Microchip Technology's APT30GP60BDQ1G is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 100A. It is designed for power control applications, offering a nominal turn-off time of 165ns and a nominal turn-on time of 31ns.
IGW08T120
IGW08T120 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 16A. It is designed for power control applications, featuring a nominal turn-off time of 710ns and a max power dissipation of 70W. The package style is flange mount with through-hole terminals, making it suitable for high-power electronic systems.
CM600DU-12NFH
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED;
IXXH75N60C3D1
Littelfuse
IXXH75N60C3D1 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 150A IC, and 750W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and a fast turn-off time of 185ns.
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STGB14NC60KDT4
STMicroelectronics
STGB14NC60KDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 25A max collector current, and 80W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 340ns.
STGB25N40LZAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 25 A; No. of Terminals: 2;
STGB20N45LZAG
STGB20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 1.25V and a max collector-emitter voltage of 475V. It is designed for automotive ignition applications, has a small outline package style, and can operate at temperatures up to 175°C.
STGB10NC60KDT4
STGB10NC60KDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 242ns turn-off time. It is used for power control applications, has a small outline package style, and operates at a max temperature of 150°C.
STGB3NC120HDT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 14 A; Package Style (Meter): SMALL OUTLINE; Transistor Application: POWER CONTROL;
STGB30H60DFB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 60 A; Transistor Application: POWER CONTROL; Peak Reflow Temperature (C): NOT SPECIFIED;
STGB30V60DF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 60 A; No. of Terminals: 2; Terminal Position: SINGLE;
STGB30M65DF2
STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.
STGB10NC60KT4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 20 A; Nominal Turn Off Time (toff): 242 ns;
STGB18N40LZT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 30 A; Nominal Turn On Time (ton): 4450 ns;
STGB7H60DF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Maximum Collector Current (IC): 14 A; No. of Terminals: 2;
STGB30V60F
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Package Style (Meter): SMALL OUTLINE;
STGB10NB40LZ
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 10 A; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
STGB10NC60KD
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel;
STGB10N60L
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-PSSO-G2;
STGB10NB40LZT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Terminal Finish: Matte Tin (Sn) - annealed;
STGB12NB60KD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 30 A; Terminal Form: GULL WING;
STGB12NB60KDT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 30 A; Nominal Turn On Time (ton): 39.5 ns;
STGB10HF60KDT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 20 A; Terminal Form: GULL WING;
STGB10N60LT4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 25 A; No. of Terminals: 2; JEDEC-95 Code: TO-263AB;
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