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STGW35HF60W

STMicroelectronics

STGW35HF60W by STMicroelectronics

STGW35HF60W from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 200 W power dissipation, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

Median Price

$1.720

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

1+ parts

$1.299

100+ parts

$1.299

1k+ parts

$1.299

10k+ parts

$1.299

1

$1.299

$1.299

$1.299

$1.299

Chip1Stop

Japan . 1 parts In-Stock

1+ parts

$2.140

100+ parts

-

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-

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1

$2.140

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Distributors (In-Stock)

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Digiode

USA . 1,133 parts In-Stock

1+ parts

$1.234

100+ parts

-

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-

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1,133

$1.234

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Vyrian

USA . 4,259 parts In-Stock

1+ parts

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4,259

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Anansix

USA . 255 parts In-Stock

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255

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,821 parts In-Stock

1+ parts

$0.420

100+ parts

-

1k+ parts

$0.378

10k+ parts

-

1,821

$0.420

-

$0.378

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MKK Technologies

India . 1,675 parts In-Stock

1+ parts

$0.789

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1,675

$0.789

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DigiPath Technology Company

USA . 1,675 parts In-Stock

1+ parts

$0.789

100+ parts

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1,675

$0.789

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Corphita

USA . 1,476 parts In-Stock

1+ parts

$1.169

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1,476

$1.169

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AZTECH Wire

Italy . 1,094 parts In-Stock

1+ parts

$20.090

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1,094

$20.090

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Perfect Parts

USA . 29,836 parts In-Stock

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29,836

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Parana Technologies

USA . 678 parts In-Stock

1+ parts

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100+ parts

$0.502

1k+ parts

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678

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$0.502

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Overview

Unlock the power of innovation with the STGW35HF60W from STMicroelectronics—a leader in semiconductor solutions. This high-performance Insulated Gate Bipolar Transistor is designed for superior power control, ensuring reliability and efficiency across diverse applications. With its robust construction and fast switching times, it excels in demanding environments, making it the ideal choice for your next project. Trust in STMicroelectronics for quality that empowers your designs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent durability and resistance to environmental factors, making the device reliable in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel configuration generally offers better performance in terms of switching speed and efficiency, making this IGBT suitable for high-performance power control applications.

Configuration: SINGLE

A single-channel configuration simplifies circuit design and allows for straightforward integration into a variety of power control systems.

Transistor Application: POWER CONTROL

Designed specifically for power control, this IGBT is ideal for applications requiring efficient and reliable performance in managing high-power loads.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy mounting and integration into power electronics systems, benefiting installation and layout efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure strong mechanical connections, making this device suitable for applications requiring durability and stability under varying conditions.

Nominal Turn Off Time (toff): 295 ns

A relatively short turn-off time enhances switching efficiency, contributing to reduced energy losses in applications where fast response is critical.

No. of Terminals: 3

The three-terminal design supports versatile connectivity options, enabling ease of integration into existing circuitry.

Maximum Power Dissipation (Abs): 200 W

With a maximum power dissipation capability of 200W, this IGBT can handle substantial power levels, making it suitable for heavy-duty applications.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides additional stability and heat dissipation, enhancing the thermal management of the device in high-power environments.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures that this IGBT can function effectively in demanding ambient conditions without compromising performance.

Maximum Collector-Emitter Voltage: 600 V

With a maximum voltage rating of 600V, this IGBT is capable of handling high voltage applications, offering flexibility in various power control scenarios.

Transistor Element Material: SILICON

Silicon as the element material provides good thermal conductivity and reliability, ensuring long-term performance under different operating conditions.

Maximum Gate-Emitter Voltage: 20 V

The 20V gate-emitter voltage rating ensures compatibility with commonly utilized control circuits for effective operation.

Maximum Collector Current (IC): 60 A

A high collector current capability of 60A enables this IGBT to manage significant loads, perfect for industrial and commercial applications.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

A moderate threshold voltage allows for easier drive signal implementation while maintaining effective control over the power state of the transistor.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish enhances solderability and corrosion resistance, ensuring reliable electrical connections for the lifespan of the device.

Terminal Position: SINGLE

Single terminal position supports straightforward wiring configurations, simplifying integration into power electronic systems.

Nominal Turn On Time (ton): 45 ns

A fast turn-on time of 45 ns promotes rapid switching capabilities, contributing to improved performance in high-frequency applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGW35HF60W attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Additional Features:

LOW CONDUCTION LOSS

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

295 ns

Nominal Turn On Time (ton):

45 ns

Trade Compliance

STGW35HF60W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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