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STGW35NB60SD

STMicroelectronics

STGW35NB60SD by STMicroelectronics

STGW35NB60SD from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a turn-off time of just 3600 ns. This robust device operates efficiently up to 150 °C.

Median Price

$3.452

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 6 parts In-Stock

1+ parts

$8.530

100+ parts

$6.280

1k+ parts

$4.520

10k+ parts

-

6

$8.530

$6.280

$4.520

-

Verical

USA . 600 parts In-Stock

1+ parts

-

100+ parts

$3.450

1k+ parts

$3.450

10k+ parts

$3.029

600

-

$3.450

$3.450

$3.029

Arrow

USA . 600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.455

10k+ parts

$3.304

600

-

-

$3.455

$3.304

Future Electronics

Canada . 300 parts In-Stock

1+ parts

-

100+ parts

$2.780

1k+ parts

$2.650

10k+ parts

$2.570

300

-

$2.780

$2.650

$2.570

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 50 parts In-Stock

1+ parts

$3.930

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$3.930

-

-

-

Digiode

USA . 115 parts In-Stock

1+ parts

$8.104

100+ parts

-

1k+ parts

-

10k+ parts

-

115

$8.104

-

-

-

Vyrian

USA . 8,289 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,289

-

-

-

-

Anansix

USA . 832 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

832

-

-

-

-

Zilex Electronics Inc.

Canada . 20 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,730 parts In-Stock

1+ parts

$0.331

100+ parts

-

1k+ parts

$0.298

10k+ parts

-

1,730

$0.331

-

$0.298

-

MKK Technologies

India . 2,096 parts In-Stock

1+ parts

$0.623

100+ parts

-

1k+ parts

-

10k+ parts

-

2,096

$0.623

-

-

-

DigiPath Technology Company

USA . 2,096 parts In-Stock

1+ parts

$0.623

100+ parts

-

1k+ parts

-

10k+ parts

-

2,096

$0.623

-

-

-

Continental Prestige Electronics

USA . 6 parts In-Stock

1+ parts

$4.760

100+ parts

$3.160

1k+ parts

$2.280

10k+ parts

-

6

$4.760

$3.160

$2.280

-

Corphita

USA . 2,614 parts In-Stock

1+ parts

$7.677

100+ parts

-

1k+ parts

-

10k+ parts

-

2,614

$7.677

-

-

-

AZTECH Wire

Italy . 889 parts In-Stock

1+ parts

$15.450

100+ parts

-

1k+ parts

-

10k+ parts

-

889

$15.450

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Parana Technologies

USA . 1,389 parts In-Stock

1+ parts

-

100+ parts

$0.396

1k+ parts

-

10k+ parts

-

1,389

-

$0.396

-

-

Perfect Parts

USA . 1,260 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,260

-

-

-

-

Glotronic Ltd.

UK . 480 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

480

-

-

-

-

Overview

Unlock the potential of your projects with the STGW35NB60SD IGBT from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for superior motor control applications, this robust N-channel transistor combines high efficiency with reliability, ensuring optimal performance even under demanding conditions. With exceptional power dissipation and thermal management, it empowers engineers to achieve their design goals while enhancing system durability and longevity. Elevate your designs and experience unparalleled value with STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides reliable insulation and thermal properties, ensuring durability in various operating environments.

Polarity or Channel Type: N-CHANNEL

N-channel configuration typically offers lower on-resistance and higher efficiency, making it suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and adds protection against voltage spikes, enhancing the overall reliability of the system.

Transistor Application: MOTOR CONTROL

Optimized for motor control applications, this IGBT delivers superior performance in driving motors efficiently and effectively.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy integration into different circuit layouts, allowing for versatile design applications.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides excellent mechanical support and thermal conductivity, making it easy to handle during assembly.

Nominal Turn Off Time (toff): 3600 ns

A relatively long turn-off time suits applications requiring stable operation, contributing to minimized switching losses.

No. of Terminals: 3

With three terminals, this device enables straightforward connections and simplifies circuit design for users.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capacity allows operation under heavy loads, making this IGBT suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mounting ensures stable thermal contact with heat sinks, enhancing heat management for prolonged device life.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance even under challenging conditions, increasing application versatility.

Maximum Collector-Emitter Voltage: 600 V

A collector-emitter voltage rating of 600 V allows for use in high-voltage applications, ensuring broad compatibility with various systems.

Transistor Element Material: SILICON

Silicon as the material provides effective electrical characteristics, making this IGBT a standard choice in many electronic circuits.

Maximum Gate-Emitter Voltage: 20 V

A maximum gate-emitter voltage of 20 V permits flexible driving signals, accommodating various control logic levels.

Maximum Collector Current (IC): 70 A

The ability to handle a collector current of 70 A allows this IGBT to drive heavy loads efficiently, suitable for industrial applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

A low threshold voltage enhances the IGBT's responsiveness to control signals, leading to improved switching performance.

Terminal Finish: TIN

Tin finishes on terminals provide good solderability and long-term reliability, ensuring secure connections in various environments.

Terminal Position: SINGLE

Single terminal positioning simplifies PCB layout and assembly processes, reducing potential design complexities.

Nominal Turn On Time (ton): 153 ns

Fast turn-on time contributes to rapid switching capabilities, improving efficiency and performance in high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGW35NB60SD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

3600 ns

Nominal Turn On Time (ton):

153 ns

Trade Compliance

STGW35NB60SD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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