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STGD6NC60HT4

STMicroelectronics

STGD6NC60HT4 by STMicroelectronics

STGD6NC60HT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 15A collector current, and operates at up to 150 °C. Ideal for applications requiring fast switching and high power dissipation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,381 parts In-Stock

1+ parts

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5,381

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Connector Distribution Corp

USA . 2,500 parts In-Stock

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2,500

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Right Parts Inc.

USA . 2,498 parts In-Stock

1+ parts

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2,498

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Digiode

USA . 1,791 parts In-Stock

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1,791

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Anansix

USA . 140 parts In-Stock

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140

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 463 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

$0.900

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463

$1.000

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$0.900

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MKK Technologies

India . 1,246 parts In-Stock

1+ parts

$1.881

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1,246

$1.881

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DigiPath Technology Company

USA . 1,246 parts In-Stock

1+ parts

$1.881

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1,246

$1.881

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$2.225

100+ parts

$2.025

1k+ parts

$1.824

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50

$2.225

$2.025

$1.824

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AZTECH Wire

Italy . 1,202 parts In-Stock

1+ parts

$19.130

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1,202

$19.130

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 4,188 parts In-Stock

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4,188

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Corphita

USA . 1,868 parts In-Stock

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1,868

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Parana Technologies

USA . 738 parts In-Stock

1+ parts

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$1.196

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738

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$1.196

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Overview

Unlock the potential of your power control applications with the STGD6NC60HT4 IGBT from STMicroelectronics. Renowned for its exceptional quality and reliability, STMicroelectronics delivers cutting-edge technology that stands the test of time. This versatile N-channel device is designed for peak performance, ensuring efficiency and durability in demanding environments. Experience reduced switching losses and enhanced thermal management, empowering your projects to thrive with precision and confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides a lightweight and durable package, enhancing reliability and protection in various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration allows for efficient electronic switching, making it suitable for high-performance power control applications.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces the footprint, making it ideal for compact electronic devices.

Transistor Application: POWER CONTROL

Designed specifically for power control, this IGBT is optimized for managing high voltage and current loads efficiently.

Surface Mount: YES

Surface mount technology allows for automated assembly and saves space on circuit boards, enhancing the overall design flexibility.

Package Shape: RECTANGULAR

The rectangular shape facilitates easier integration into various PCB designs, ensuring efficient layout and electrical performance.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and ensure reliable solder joints, contributing to long-term durability.

Nominal Turn Off Time (toff): 222 ns

A fast turn-off time allows for rapid switching speeds, enhancing performance in high-frequency applications.

No. of Terminals: 2

With only two terminals, this IGBT reduces complexity in circuit design, making it user-friendly and easy to implement.

Maximum Power Dissipation (Abs): 56 W

A high maximum power dissipation capability indicates robust performance under load, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-efficient, allowing for higher density designs in modern electronics.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature enhances reliability and performance in harsh environments, extending product lifespan.

Maximum Collector-Emitter Voltage: 600 V

With a maximum collector-emitter voltage of 600V, this IGBT is well-suited for high-voltage applications, providing versatility in usage.

Transistor Element Material: SILICON

Silicon as the element material ensures good thermal stability and efficiency, ideal for various power control applications.

Maximum Gate-Emitter Voltage: 20 V

The capability to handle up to 20V on the gate-emitter maintains control under varying input conditions, providing design flexibility.

Maximum Collector Current (IC): 15 A

A maximum collector current rating of 15 A allows this IGBT to drive substantial loads effectively, making it suitable for power applications.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

A low threshold voltage of 5.75V ensures efficient switching and minimal power loss in the control circuit.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and corrosion resistance, ensuring long-lasting electrical connections.

Terminal Position: SINGLE

Single terminal positioning simplifies board layout and connectivity, enhancing design efficiency.

Nominal Turn On Time (ton): 17.3 ns

A nominal turn-on time of 17.3 ns allows for fast switching, increasing the overall performance in high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGD6NC60HT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

222 ns

Nominal Turn On Time (ton):

17.3 ns

Trade Compliance

STGD6NC60HT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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