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STGP12NB60HD

STMicroelectronics

STGP12NB60HD by STMicroelectronics

STGP12NB60HD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, a power dissipation of 100W, and fast switching times (ton: 51ns, toff: 295ns). Its robust design ensures reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,277 parts In-Stock

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Anansix

USA . 983 parts In-Stock

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983

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Digiode

USA . 152 parts In-Stock

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152

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 339 parts In-Stock

1+ parts

$1.785

100+ parts

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$1.606

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339

$1.785

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$1.606

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MKK Technologies

India . 300 parts In-Stock

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$3.356

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300

$3.356

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DigiPath Technology Company

USA . 300 parts In-Stock

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$3.356

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300

$3.356

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AZTECH Wire

Italy . 432 parts In-Stock

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$13.420

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432

$13.420

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 18,844 parts In-Stock

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Corphita

USA . 3,303 parts In-Stock

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3,303

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Parana Technologies

USA . 1,978 parts In-Stock

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$2.134

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1,978

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$2.134

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Overview

Elevate your projects with the STGP12NB60HD IGBT from STMicroelectronics—a trusted leader in semiconductor technology. This robust, N-channel transistor excels in motor control applications, delivering reliability and performance even in demanding environments. With its compact design and efficient operation, it enables powerful solutions that enhance your system’s efficiency while maximizing energy savings. Choose STMicroelectronics for quality you can count on, ensuring your innovations thrive!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures the IGBT is lightweight and provides good thermal and electrical insulation, enhancing durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel design offers higher electron mobility, resulting in better performance and efficiency in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient reverse recovery, making this IGBT ideal for applications like motor control where back-emf can occur.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, this IGBT can handle the demands of high-power motor drives effectively.

Package Shape: RECTANGULAR

The rectangular shape facilitates easier mounting in various applications and efficient use of PCB space.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure robust mechanical connections, making the device suitable for high-stress environments.

Nominal Turn Off Time (toff): 295 ns

Quick turn-off time contributes to improved switching performance, reducing overall system losses in high-frequency applications.

No. of Terminals: 3

Having three terminals simplifies circuit design and integration while allowing for effective control and monitoring.

Maximum Power Dissipation (Abs): 100 W

A high power dissipation rating enables this IGBT to handle significant power levels, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures solid attachment to heatsinks, enhancing thermal management and performance in high-power applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliable operation in harsh environments and increases longevity of the device.

Maximum Collector-Emitter Voltage: 600 V

The ability to withstand high collector-emitter voltages makes this IGBT versatile for various high-voltage applications.

Transistor Element Material: SILICON

Silicon material is established for its excellent electrical properties, ensuring optimal performance in switching applications.

Maximum Gate-Emitter Voltage: 20 V

A higher gate-emitter voltage allows for better control of the transistor and improved overall performance in switching circuits.

Maximum Collector Current (IC): 30 A

A maximum collector current of 30 A permits this IGBT to handle substantial loads, ideal for high-power motor control and industrial applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

A relatively low gate-emitter threshold voltage ensures easy drive requirements and compatibility with various control circuits.

Terminal Finish: MATTE TIN

Matte tin finish on terminals enhances solderability and corrosion resistance, providing reliable long-term performance.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and improves ease of installation in various applications.

Nominal Turn On Time (ton): 51 ns

Fast turn-on time contributes to efficient switching behavior, minimizing losses and increasing the efficiency of power electronic systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGP12NB60HD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

295 ns

Nominal Turn On Time (ton):

51 ns

Trade Compliance

STGP12NB60HD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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