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STMicroelectronics Insulated Gate Bipolar Transistors (IGBT) 292

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGD25N36LZAG by STMicroelectronics

STGD25N36LZAG

STMicroelectronics

STGD25N36LZAG from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 1.25V, power dissipation of 150W, and operates b/w -55 °C to 175 °C. Its built-in TVS diode enhances reliability in demanding environments.

COLLECTOR

25 A

385 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

TO-252

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V

STGP20IH65DF by STMicroelectronics

STGP20IH65DF

STMicroelectronics

STGP20IH65DF by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05 V, supports up to 650 V collector-emitter voltage, and has a power dissipation of 159 W. Ideal for high-efficiency switching in industrial systems.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

159 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

159 ns

2.05 V

STGP30IH65DF by STMicroelectronics

STGP30IH65DF

STMicroelectronics

STGP30IH65DF by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.05V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance switching tasks.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

30 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

233 ns

2.05 V

STGYA75H120DF2 by STMicroelectronics

STGYA75H120DF2

STMicroelectronics

STMicroelectronics' STGYA75H120DF2 is an N-CHANNEL IGBT with 1200V VCE, 150A IC, and 750W Pmax. Ideal for POWER CONTROL applications due to its low VCEsat of 2.6V and fast turn-off time of 406ns. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

COLLECTOR

150 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

750 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

406 ns

95 ns

2.6 V