Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STGWA15M120DF3
STMicroelectronics
STGWA15M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and has a max power dissipation of 259W. Ideal for high-performance switching in industrial systems.
COLLECTOR
30 A
1200 V
SINGLE WITH BUILT-IN DIODE
7 V
20 V
TO-247
R-PSFM-T3
1
3
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
259 W
NO
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
406 ns
39 ns
2.3 V
STGW15S120DF3
STGW15S120DF3 IGBT from STMicroelectronics features a max VCEsat of 2.05V and supports power control applications with a collector current of up to 30A. It operates efficiently in temperatures ranging from -55 °C to 175 °C. This single-channel device is ideal for high-power switching tasks.
584 ns
31.2 ns
2.05 V
STGW25S120DF3
STGW25S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 375W power dissipation, and operates at temperatures from -55 °C to 175 °C. Ideal for high-voltage systems with a max collector-emitter voltage of 1200V.
50 A
375 W
593 ns
43 ns
2.1 V
STGW40S120DF3
STGW40S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, a collector current of 80 A, and fast switching times (ton: 50 ns, toff: 158.46 ns). Ideal for industrial and automotive uses, it comes in a flange mount package with through-hole terminals.
80 A
158.46 ns
50 ns
STGWA15S120DF3
STGWA15S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.05V, supports up to 1200V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with a built-in diode.
STGWA25S120DF3
STGWA25S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 375W power dissipation, and operates at temperatures from -55 °C to 175 °C. Ideal for high-voltage applications with a max collector-emitter voltage of 1200V.
STGWA40S120DF3
STGWA40S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, a collector current of 80 A, and fast switching times (ton: 50 ns, toff: 158.46 ns). Its robust plastic/epoxy package ensures reliability in demanding environments.
STGB20NC60V
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 60 A; Transistor Application: POWER CONTROL;
60 A
600 V
5.75 V
TO-263AB
R-PSSO-G2
2
150 Cel
SMALL OUTLINE
200 W
YES
GULL WING
280 ns
42.5 ns
2.5 V
STGB30H60DLFB
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
260 W
Insulated Gate BIP Transistors
STGB30M65DF2
STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.
650 V
258 W
310 ns
47 ns
2 V
STGB7H60DF
STGB7H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 14A, and Pmax of 88W. Ideal for POWER CONTROL applications due to its fast turn-off time (263ns) and high operating temperature range (-55 to 175°C). The device comes in a small outline package with built-in diode for surface mount installation.
14 A
6.9 V
88 W
263 ns
42.8 ns
1.95 V
STGFW20H65FB
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Threshold Voltage: 7 V; Maximum Operating Temperature: 175 Cel;
40 A
52 W
STGW20H65FB
STGW20H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 40A IC, and 168W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
168 W
STGW30H60DLFB
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
STGW80H65FB
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
120 A
469 W
STGWA15H120DF2
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 259 W; Maximum Collector Current (IC): 30 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 175 Cel;
STGWA25H120F2
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 50 A; Peak Reflow Temperature (C): NOT SPECIFIED;
339 ns
41 ns
STGWA30M65DF2
STGWA30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCEsat, 60A IC, and 258W power dissipation. Ideal for power control applications due to its fast turn-off time of 310ns and high operating temperature of 175°C. Package style is flange mount with through-hole terminals.
STGWA40M120DF3
STGWA40M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with a max power dissipation of 468W. It operates at a max temperature of 175°C and has a collector-emitter voltage of 1200V. It is commonly used in high-power applications such as motor drives and inverters.
468 W
STGWA80H65DFB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 470 W; Maximum Collector Current (IC): 120 A; Nominal Turn Off Time (toff): 358 ns;
470 W
358 ns
128 ns
STGWA80H65FB
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Gate-Emitter Threshold Voltage: 7 V;
STGWT80H65FB
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;
STGWA25H120DF2
STGWA25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.6V, IC of 50A, and Pmax of 375W. Ideal for power control applications due to its fast turn-off time (toff) of 339ns and high collector-emitter voltage of 1200V. Package style: FLANGE MOUNT, suitable for high-power operations in various industries.
2.6 V
STGB5H60DF
STGB5H60DF from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 1.95V, supports up to 600V collector-emitter voltage, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.
BULK: 1000
10 A
STGB30H60DFB
STGB30H60DFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 223ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package.
223 ns
51.1 ns
STGW30M65DF2
STGW30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 258W power dissipation. Ideal for POWER CONTROL applications, it features a built-in diode, 310ns turn-off time, and -55 to 175°C operating temperature range.
STGWA20M65DF2
STGWA20M65DF2 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and operates b/w -55 °C to 175 °C. Its compact design supports efficient thermal management in various electronic systems.
166 W
252 ns
39.6 ns
STGWA40H65DFB
STGWA40H65DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 80A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode functionality.
283 W
202 ns
52 ns
STGF10M65DF2
STGF10M65DF2 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and operates b/w -55 °C to 175 °C. Its compact design ensures efficient thermal management in various electronic systems.
ISOLATED
20 A
TO-220AB
30 W
260 ns
27 ns
STGW80H65DFB-4
STGW80H65DFB-4 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V and IC of 120A. Ideal for POWER CONTROL applications, it has a max VCE of 650V and can handle up to 470W power dissipation. With fast ton of 104ns and toff of 448ns, this IGBT operates in temperatures ranging from -55°C to 175°C.
R-PSFM-T4
e3
4
MATTE TIN
448 ns
104 ns
STGWA60V60DF
STGWA60V60DF from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.3 V, supports up to 600 V collector-emitter voltage, and has a power dissipation of 375 W. Its robust design ensures reliable performance in demanding environments.
243 ns
80 ns
STGB4M65DF2
STGB4M65DF2 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.1V, supports up to 68W power dissipation, and operates b/w -55 °C to 175 °C. Ideal for efficient switching in compact designs.
8 A
68 W
296 ns
19.6 ns
STGW75M65DF2
STGW75M65DF2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 120A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode functionality.
292 ns
73 ns
STGWA50M65DF2
STGWA50M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 80A, and Pmax of 375W. Ideal for power control applications due to its fast turn-off time (315ns) and high collector-emitter voltage rating (650V). Suitable for use in various industrial settings requiring efficient power management.
315 ns
66 ns
STGWA75M65DF2
STGWA75M65DF2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 120A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications requiring robust thermal management.
STGWA30H60DFB
STGWA30H60DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 600V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with a built-in diode.
STGWA8M120DF3
STGWA8M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with low turn-off times.
16 A
167 W
356 ns
28.8 ns
STGB3HF60HD
STGB3HF60HD from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.95V, 600V collector-emitter voltage, and operates at temperatures up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic systems.
7.5 A
38 W
140 ns
15 ns
2.95 V
STGF3HF60HD
STGF3HF60HD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.95V, supports up to 600V collector-emitter voltage, and operates in temperatures from -55 °C to 150 °C. Ideal for high-performance switching tasks, it ensures reliable operation with minimal losses.
18 W
STGWA40H65FB
STGWA40H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 80A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance switching tasks.
STGWT20HP65FB
STGWT20HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. With a built-in diode and fast switching times (ton: 159ns, toff: 185ns), it's ideal for high-performance systems.
185 ns
159 ns
STGW40H65DFB-4
STGW40H65DFB-4 IGBT from STMicroelectronics features a max VCEsat of 2V, supports up to 80A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for power control applications, it ensures efficient performance in demanding environments. Its robust design includes a built-in diode for enhanced reliability.
209 ns
54.8 ns
STGW80H65FB-4
STGW80H65FB-4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 120A collector current, and operates in temperatures from -55 °C to 175 °C. Its robust design includes a built-in diode and Kelvin sensor for enhanced performance.
SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR
STGWT30HP65FB
STGWT30HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures ranging from -55 °C to 175 °C. Its robust design ensures reliable performance in demanding environments.
169 ns
STGB30H60DLLFBAG
STGB30H60DLLFBAG from STMicroelectronics is a robust N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 2.15V, supports up to 60A collector current, and operates within -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management and reliability.
AEC-Q101
AUTOMOTIVE IGNITION
370 ns
2.15 V
STGWT15H60F
STGWT15H60F by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 600V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.
115 W
225 ns
34 ns
STGB25N40LZAG
STGB25N40LZAG by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.25V, IC of 25A, and Ptot of 150W. Ideal for automotive ignition applications due to its built-in TVS diode and resistor. Operates b/w -55°C to 175°C temperature range, meeting AEC-Q101 standards.
25 A
435 V
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
16 V
150 W
14500 ns
4560 ns
1.25 V
STGW60H65DFB-4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Transistor Application: POWER CONTROL;
329 ns
91 ns
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