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STGWA20M65DF2

STMicroelectronics

STGWA20M65DF2 by STMicroelectronics

STGWA20M65DF2 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and operates b/w -55 °C to 175 °C. Its compact design supports efficient thermal management in various electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,133 parts In-Stock

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4,133

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Anansix

USA . 1,902 parts In-Stock

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1,902

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Digiode

USA . 1,744 parts In-Stock

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1,744

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,485 parts In-Stock

1+ parts

$0.616

100+ parts

-

1k+ parts

$0.555

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1,485

$0.616

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$0.555

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MKK Technologies

India . 1,438 parts In-Stock

1+ parts

$1.159

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1,438

$1.159

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DigiPath Technology Company

USA . 1,438 parts In-Stock

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$1.159

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1,438

$1.159

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Microchip USA

USA . 4,697 parts In-Stock

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$13.549

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4,697

$13.549

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AZTECH Wire

Italy . 337 parts In-Stock

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$14.980

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337

$14.980

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Corphita

USA . 2,577 parts In-Stock

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2,577

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Parana Technologies

USA . 1,790 parts In-Stock

1+ parts

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$0.737

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1,790

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$0.737

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Overview

Unlock unparalleled performance in your power control applications with the STGWA20M65DF2 from STMicroelectronics. Renowned for their innovative solutions, STMicroelectronics ensures exceptional reliability and efficiency in every product. This N-channel IGBT offers robust thermal management and rapid switching capabilities, making it ideal for a wide range of uses—from industrial machinery to renewable energy systems. Elevate your projects with a trusted component that delivers both quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures robust protection against environmental factors, making the IGBT reliable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel configuration allows for efficient conduction and is well-suited for high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances efficiency by providing a path for current when the transistor is off, reducing switching losses.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, making it ideal for automotive and industrial systems.

Maximum VCEsat: 2 V

A low VCE saturation voltage indicates reduced loss during operation, enhancing the IGBT's efficiency.

Package Shape: RECTANGULAR

Rectangular packaging allows for efficient space utilization in circuit designs, facilitating easier integration.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide improved mechanical stability and heat dissipation, which is essential for high-power devices.

Nominal Turn Off Time (toff): 252 ns

A short turn-off time translates to faster switching, allowing for efficient control in dynamic applications.

No. of Terminals: 3

Three terminals simplify connections and functionality, making it user-friendly for circuit designs.

Maximum Power Dissipation (Abs): 166 W

A high power dissipation capability enables the IGBT to handle substantial power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount design facilitates easy integration into larger systems, providing reliable mechanical support.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows for reliable operation in demanding environments, enhancing durability.

Maximum Collector-Emitter Voltage: 650 V

With a high collector-emitter voltage rating, it can be used in high-voltage applications safely.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties, ensuring stable and efficient operation.

Maximum Gate-Emitter Voltage: 20 V

A higher gate-emitter voltage improves gate drive capability, allowing for better control of the IGBT.

Minimum Operating Temperature: -55 °C

The ability to operate at low temperatures expands the range of environments and applications where the IGBT can be deployed.

Maximum Collector Current (IC): 40 A

A high maximum collector current rating allows the IGBT to support heavy loads, crucial for power management.

Maximum Gate-Emitter Threshold Voltage: 7 V

This threshold enables efficient switching and improved power efficiency during operation.

Terminal Position: SINGLE

A single terminal position simplifies circuit design and integration, enhancing usability.

Nominal Turn On Time (ton): 39.6 ns

Quick turn-on time ensures rapid response in switching applications, crucial for fast load control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGWA20M65DF2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

252 ns

Nominal Turn On Time (ton):

39.6 ns

Maximum VCEsat:

2 V

Trade Compliance

STGWA20M65DF2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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