Loading...

STMicroelectronics Insulated Gate Bipolar Transistors (IGBT) 292

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
A1C15S12M3-F by STMicroelectronics

A1C15S12M3-F

STMicroelectronics

A1C15S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 1200V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a compact flange mount design, it excels in high-power systems.

ISOLATED

15 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X23

7

23

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

142.8 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

199 ns

134.5 ns

2.45 V

A1C15S12M3 by STMicroelectronics

A1C15S12M3

STMicroelectronics

STMicroelectronics A1C15S12M3 is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.45V, Nominal Turn Off Time of 199ns, and Max Collector Current of 15A. Ideal for high-power systems requiring efficient switching with a max operating temperature of 150°C.

ISOLATED

15 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X23

7

23

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

142.8 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

199 ns

134.5 ns

2.45 V

A1P25S12M3 by STMicroelectronics

A1P25S12M3

STMicroelectronics

A1P25S12M3 by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.45V, supports up to 197W dissipation, and operates b/w -40 °C to 150 °C. Ideal for complex applications requiring robust performance.

ISOLATED

25 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

197 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

326 ns

139 ns

2.45 V

A1P35S12M3 by STMicroelectronics

A1P35S12M3

STMicroelectronics

A1P35S12M3 by STMicroelectronics is a complex N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

ISOLATED

35 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

398 ns

142 ns

2.45 V

A1P50S65M2-F by STMicroelectronics

A1P50S65M2-F

STMicroelectronics

A1P50S65M2-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 50A collector current, and operates at temperatures from -40 °C to 150 °C. Ideal for high-efficiency power management systems.

ISOLATED

50 A

650 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

208 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

331 ns

167.2 ns

2.3 V

A1P50S65M2 by STMicroelectronics

A1P50S65M2

STMicroelectronics

A1P50S65M2 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 650V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a robust design, it handles up to 208W power dissipation.

ISOLATED

50 A

650 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

208 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

331 ns

167.2 ns

2.3 V

A2C25S12M3-F by STMicroelectronics

A2C25S12M3-F

STMicroelectronics

STMicroelectronics A2C25S12M3-F is an N-CHANNEL IGBT for POWER CONTROL applications. With VCEsat of 2.45V, IC of 25A, and toff of 338ns, it offers efficient power management. Operating b/w -40°C to 150°C, this transistor has a max VCE of 1200V in a RECTANGULAR package with 35 terminals.

ISOLATED

25 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X35

7

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

197 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

338 ns

125.2 ns

2.45 V

A2C25S12M3 by STMicroelectronics

A2C25S12M3

STMicroelectronics

A2C25S12M3 by STMicroelectronics is an N-channel IGBT designed for motor control applications. It features a max VCEsat of 2.45V, 1200V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. Its robust design includes a bridge configuration with built-in diodes.

25 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

7 V

20 V

R-XUFM-X35

6

35

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

197 W

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

338 ns

125.2 ns

2.45 V

A2C35S12M3-F by STMicroelectronics

A2C35S12M3-F

STMicroelectronics

A2C35S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

ISOLATED

35 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X35

7

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

364 ns

145 ns

2.45 V

A2C35S12M3 by STMicroelectronics

A2C35S12M3

STMicroelectronics

A2C35S12M3 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency power management in industrial systems.

35 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

7 V

20 V

R-XUFM-X35

6

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

364 ns

170 ns

2.45 V

A2C50S65M2-F by STMicroelectronics

A2C50S65M2-F

STMicroelectronics

A2C50S65M2-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 650V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a power dissipation of 208W, it's ideal for high-performance systems.

ISOLATED

50 A

650 V

COMPLEX

7 V

20 V

R-XUFM-X35

7

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

208 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

298 ns

167 ns

2.3 V

A2C50S65M2 by STMicroelectronics

A2C50S65M2

STMicroelectronics

A2C50S65M2 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 50A collector current, and operates in temperatures from -40 °C to 150 °C. Ideal for high-efficiency power management systems.

ISOLATED

50 A

650 V

COMPLEX

7 V

20 V

R-XUFM-X35

7

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

208 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

298 ns

167 ns

2.3 V

STGB30H65FB by STMicroelectronics

STGB30H65FB

STMicroelectronics

STGB30H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.

COLLECTOR

60 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGWA30H65FB by STMicroelectronics

STGWA30H65FB

STMicroelectronics

STGWA30H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures ranging from -55 °C to 175 °C. Ideal for high-performance switching tasks, it ensures reliable operation with minimal losses.

60 A

650 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

A1P25S12M3-F by STMicroelectronics

A1P25S12M3-F

STMicroelectronics

A1P25S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, 197W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

ISOLATED

25 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

197 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

326 ns

139 ns

2.45 V

A1P35S12M3-F by STMicroelectronics

A1P35S12M3-F

STMicroelectronics

A1P35S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

ISOLATED

35 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

398 ns

142 ns

2.45 V

STGWA30H65DFB by STMicroelectronics

STGWA30H65DFB

STMicroelectronics

STGWA30H65DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode support.

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

62.8 ns

2 V

A2P75S12M3-F by STMicroelectronics

A2P75S12M3-F

STMicroelectronics

A2P75S12M3-F by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector current (IC) of 75A. It is commonly used for power control applications due to its high power dissipation capability and wide operating temperature range (-40°C to 150°C).

ISOLATED

75 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X33

6

33

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

454.4 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

517 ns

235 ns

2.3 V

A2P75S12M3 by STMicroelectronics

A2P75S12M3

STMicroelectronics

A2P75S12M3 by STMicroelectronics is an N-channel IGBT designed for motor control applications. It features a max VCEsat of 2.3V, supports up to 75A collector current, and operates at temperatures from -40 °C to 150 °C. Its bridge configuration with 6 elements ensures efficient performance.

ISOLATED

75 A

1200 V

BRIDGE, 6 ELEMENTS

7 V

20 V

R-XUFM-X33

6

33

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

454.5 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

517 ns

235 ns

2.3 V

STGP8M120DF3 by STMicroelectronics

STGP8M120DF3

STMicroelectronics

STGP8M120DF3 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.3V, operates up to 175 °C, and supports 1200V with a collector current of 16A. Its compact design ensures efficient thermal management in various systems.

COLLECTOR

16 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

356 ns

28.8 ns

2.3 V

STGWA40HP65FB2 by STMicroelectronics

STGWA40HP65FB2

STMicroelectronics

STGWA40HP65FB2 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2V, supports up to 72A collector current, and operates b/w -55 °C to 175 °C. Its robust design ensures efficient performance in demanding environments.

COLLECTOR

72 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

230 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

189 ns

2 V

STGWA40IH65DF by STMicroelectronics

STGWA40IH65DF

STMicroelectronics

STGWA40IH65DF from STMicroelectronics is a robust N-channel IGBT ideal for high-power applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and handles up to 80A current. Its compact design ensures efficient thermal management in demanding environments.

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

238 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

263 ns

2 V

STGWA40H60DLFB by STMicroelectronics

STGWA40H60DLFB

STMicroelectronics

STGWA40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Ptot of 283W. Ideal for applications requiring high power dissipation in a compact package such as motor drives, inverters, and industrial equipment.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

283 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

202 ns

2 V

STGB19N40LZ by STMicroelectronics

STGB19N40LZ

STMicroelectronics

STGB19N40LZ by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 1.85V, supports up to 150W power dissipation, and operates b/w -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management.

BULK: 1000

COLLECTOR

25 A

425 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.6 V

16 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

150 W

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

22200 ns

4450 ns

1.85 V

STGWA40H65DFB2 by STMicroelectronics

STGWA40H65DFB2

STMicroelectronics

STGWA40H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 72A IC, and 230W power dissipation. Ideal for power control applications due to its fast turn-off time of 158ns and built-in diode configuration. Operates b/w -55°C to 175°C temperature range in a rectangular package style.

COLLECTOR

72 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

230 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

158 ns

34 ns

2 V

STGWA40H65DHFB2 by STMicroelectronics

STGWA40H65DHFB2

STMicroelectronics

STGWA40H65DHFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 650V collector-emitter voltage, and has a power dissipation of 230W. Ideal for high-performance switching in industrial systems.

COLLECTOR

72 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

230 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

183 ns

24.6 ns

2 V

STGWA30HP65FB by STMicroelectronics

STGWA30HP65FB

STMicroelectronics

STGWA30HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance switching tasks.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

169 ns

2 V

STGWA40HP65FB by STMicroelectronics

STGWA40HP65FB

STMicroelectronics

STGWA40HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 80A collector current, and operates in temperatures from -55 °C to 175 °C. Its robust design ensures reliable performance in demanding environments.

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

283 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

202 ns

169 ns

2 V

STGWA60V60DWFAG by STMicroelectronics

STGWA60V60DWFAG

STMicroelectronics

STGWA60V60DWFAG from STMicroelectronics is a robust N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 600V collector-emitter voltage, and operates efficiently at temperatures from -55 °C to 175 °C. Ideal for high-power systems, it ensures reliable performance with a built-in diode.

COLLECTOR

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

55 ns

2.3 V

STGWA50H65DFB2 by STMicroelectronics

STGWA50H65DFB2

STMicroelectronics

STGWA50H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 86A, and Pmax of 272W. Ideal for power control applications due to its fast turn-off time (toff) of 225ns and turn-on time (ton) of 41ns. Package style is flange mount with a max operating temperature of 175°C.

COLLECTOR

86 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

272 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

225 ns

41 ns

2 V

STGWA50HP65FB2 by STMicroelectronics

STGWA50HP65FB2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 272 W; Maximum Collector Current (IC): 86 A; Minimum Operating Temperature: -55 Cel;

COLLECTOR

86 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

272 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

225 ns

2 V

STGB50H65FB2 by STMicroelectronics

STGB50H65FB2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 272 W; Maximum Collector Current (IC): 86 A; Case Connection: COLLECTOR;

COLLECTOR

86 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

272 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

225 ns

41 ns

2 V

STGWA75H65DFB2 by STMicroelectronics

STGWA75H65DFB2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 115 A; Maximum Gate-Emitter Voltage: 20 V;

COLLECTOR

115 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

357 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

210 ns

44 ns

2 V

STGF30H65DFB2 by STMicroelectronics

STGF30H65DFB2

STMicroelectronics

STGF30H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 50A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.

ISOLATED

50 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

50 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

184 ns

27.5 ns

2.1 V

STGP20H65DFB2 by STMicroelectronics

STGP20H65DFB2

STMicroelectronics

STGP20H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 40A, and Ptot of 147W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 178ns and high collector-emitter voltage rating of 650V. Package style is FLANGE MOUNT with through-hole terminals.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

147 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

STGWA20HP65FB2 by STMicroelectronics

STGWA20HP65FB2

STMicroelectronics

STGWA20HP65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 40A collector current, and operates in temps from -55 °C to 175 °C. Ideal for high-performance applications like motor drives and power converters.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

147 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

178 ns

2.1 V

STGB20H65FB2 by STMicroelectronics

STGB20H65FB2

STMicroelectronics

STGB20H65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, 650V collector-emitter voltage, and operates at temperatures up to 175 °C. Ideal for high-performance applications in energy conversion systems.

COLLECTOR

40 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

147 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

STGP20H65FB2 by STMicroelectronics

STGP20H65FB2

STMicroelectronics

STGP20H65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.

COLLECTOR

40 A

650 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

147 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

STGWA30H65DFB2 by STMicroelectronics

STGWA30H65DFB2

STMicroelectronics

STGWA30H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 50A, and Pmax of 167W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 184ns and high collector-emitter voltage rating of 650V. Suitable for use in various power control systems requiring efficient switching capabilities.

COLLECTOR

50 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

184 ns

27.5 ns

2.1 V

STGB20H65DFB2 by STMicroelectronics

STGB20H65DFB2

STMicroelectronics

STGB20H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 40A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode functionality.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

147 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

STGP30H65DFB2 by STMicroelectronics

STGP30H65DFB2

STMicroelectronics

STGP30H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 50A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode support.

COLLECTOR

50 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

184 ns

27.5 ns

2.1 V

STGWA20IH65DF by STMicroelectronics

STGWA20IH65DF

STMicroelectronics

STGWA20IH65DF from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.05V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

159 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

230 ns

2.05 V

STGWA30IH65DF by STMicroelectronics

STGWA30IH65DF

STMicroelectronics

STGWA30IH65DF from STMicroelectronics is a robust N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05V, supports up to 60A collector current, and operates efficiently b/w -55 °C to 175 °C. Ideal for high-power switching tasks in various electronic systems.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

180 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

312 ns

2.05 V

STGW75H65DFB2-4 by STMicroelectronics

STGW75H65DFB2-4

STMicroelectronics

STGW75H65DFB2-4 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 115A, and Pmax of 357W. Ideal for power control applications due to its fast turn-off time (toff) of 231ns and high collector-emitter voltage of 650V. Package style is flange mount with through-hole terminals.

COLLECTOR

115 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

357 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

231 ns

42 ns

2 V

STGW50H65DFB2-4 by STMicroelectronics

STGW50H65DFB2-4

STMicroelectronics

STGW50H65DFB2-4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 86A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications in industrial and automotive sectors.

COLLECTOR

86 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

272 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

34 ns

2 V

STGW100H65FB2-4 by STMicroelectronics

STGW100H65FB2-4

STMicroelectronics

STGW100H65FB2-4 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2V, supports up to 441W power dissipation, and operates b/w -55 °C to 175 °C. Ideal for high-efficiency switching in industrial systems.

COLLECTOR

145 A

650 V

SINGLE

6.5 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

441 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

255 ns

49 ns

2 V

STGB25N36LZAG by STMicroelectronics

STGB25N36LZAG

STMicroelectronics

STGB25N36LZAG IGBT from STMicroelectronics features a max VCEsat of 1.25V, supports up to 25A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for automotive ignition applications, it ensures reliable performance with built-in TVS diode. Its compact surface mount design enhances space efficiency in electronic circuits.

COLLECTOR

25 A

385 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V

STGI25N36LZAG by STMicroelectronics

STGI25N36LZAG

STMicroelectronics

STGI25N36LZAG from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 1.25V, supports up to 25A collector current, and operates b/w -55 °C to 175 °C. Its built-in TVS diode enhances reliability in harsh environments.

COLLECTOR

25 A

385 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

R-PSIP-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

150 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V