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A1P25S12M3

STMicroelectronics

A1P25S12M3 by STMicroelectronics

A1P25S12M3 by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.45V, supports up to 197W dissipation, and operates b/w -40 °C to 150 °C. Ideal for complex applications requiring robust performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,476 parts In-Stock

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7,476

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Digiode

USA . 1,648 parts In-Stock

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1,648

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Anansix

USA . 706 parts In-Stock

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706

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,755 parts In-Stock

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$0.764

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-

1k+ parts

$0.687

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1,755

$0.764

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$0.687

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MKK Technologies

India . 2,091 parts In-Stock

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$1.436

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2,091

$1.436

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DigiPath Technology Company

USA . 2,091 parts In-Stock

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$1.436

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2,091

$1.436

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AZTECH Wire

Italy . 840 parts In-Stock

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$17.210

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840

$17.210

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Microchip USA

USA . 9,235 parts In-Stock

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$100.536

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9,235

$100.536

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Native Components

USA . 257 parts In-Stock

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$144.882

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$139.086

257

$144.882

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$139.086

Northwest PG Solutions

USA . 1,932 parts In-Stock

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$159.370

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1,932

$159.370

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Component Stockers USA

USA . 167 parts In-Stock

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$482.580

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167

$482.580

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Corphita

USA . 1,611 parts In-Stock

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1,611

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Perfect Parts

USA . 202 parts In-Stock

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202

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Parana Technologies

USA . 183 parts In-Stock

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$0.913

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183

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$0.913

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Overview

Unlock the power of precision with the A1P25S12M3 from STMicroelectronics, a leader in semiconductor innovation. This N-channel insulated gate bipolar transistor (IGBT) is designed for exceptional power control in demanding applications, delivering reliability at temperatures ranging from -40 °C to 150 °C. With its robust design and efficient performance, it enhances energy management and operational efficiency, making it the perfect choice for industrial, automotive, and renewable energy solutions. Experience unparalleled quality and performance that elevate your projects to new heights!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-Channel transistors usually offer lower on-state resistance, improving efficiency and thermal performance, making this product suitable for high power applications.

Configuration: COMPLEX

Complex configuration allows for flexible and versatile use in various applications, enhancing the versatility of circuit design.

Transistor Application: POWER CONTROL

Designed specifically for power control, this IGBT ensures reliable performance in managing high voltage and current conditions.

Maximum VCEsat: 2.45 V

A low collector-emitter saturation voltage reduces power losses during operation, making this device efficient for high-performance applications.

Package Shape: RECTANGULAR

The rectangular package shape can be advantageous for space-constrained designs, facilitating easier assembly in various applications.

No. of Elements: 6

Having multiple elements allows for increased functionality in power management, making this IGBT suitable for complex circuit designs.

Nominal Turn Off Time (toff): 326 ns

The fast turn-off time enables rapid switching, enhancing overall performance in dynamic applications.

No. of Terminals: 22

A higher number of terminals offers more connection options, improving design flexibility and enabling advanced configurations.

Maximum Power Dissipation (Abs): 197 W

High power dissipation capability means the device can handle significant power without overheating, ensuring reliable continuous operation.

Package Style (Meter): FLANGE MOUNT

Flange mount style is ideal for robust applications, providing better thermal management and mechanical stability.

Maximum Operating Temperature: 150 °C

Operating at elevated temperatures allows for use in harsh environments while maintaining functionality, enhancing reliability.

Maximum Collector-Emitter Voltage: 1200 V

A high maximum voltage rating makes this IGBT suitable for high voltage applications, broadening its usability in various industries.

Transistor Element Material: SILICON

Silicon material offers a good balance of performance and cost, making this IGBT a practical choice for a range of applications.

Maximum Gate-Emitter Voltage: 20 V

This voltage rating provides flexibility in driving the gate, accommodating various control circuitry configurations.

Minimum Operating Temperature: -40 °C

Ability to operate at low temperatures expands application potential in diverse environments, ensuring consistent performance.

Maximum Collector Current (IC): 25 A

This maximum current rating ensures reliable performance in high-load applications, making it suitable for power electronics.

Maximum Gate-Emitter Threshold Voltage: 7 V

A moderate threshold voltage simplifies interface with control circuits, enhancing design convenience and reliability.

Terminal Position: UPPER

Upper terminal position can simplify assembly and connection in many electronic designs, facilitating easier integration into systems.

Case Connection: ISOLATED

An isolated case connection enhances safety and reduces noise interference, improving overall system reliability.

Nominal Turn On Time (ton): 139 ns

Fast turn-on time allows for efficient switching, leading to improved performance in dynamic applications such as motor control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) A1P25S12M3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X22

No. of Elements:

6

No. of Terminals:

22

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

326 ns

Nominal Turn On Time (ton):

139 ns

Maximum VCEsat:

2.45 V

Trade Compliance

A1P25S12M3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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