Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STGB19N40LZ by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 1.85V, supports up to 150W power dissipation, and operates b/w -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management.
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Vyrian
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Anansix
Digiode
IDEA Electronic Components Group
$0.988
$0.889
MKK Technologies
$1.858
DigiPath Technology Company
AZTECH Wire
$11.690
Parana Technologies
$1.181
Corphita
The use of plastic/epoxy ensures durability and resistance to environmental factors, making this IGBT suitable for various applications.
N-channel configuration is ideal for high-efficiency switching applications, providing better performance in power control.
This configuration enhances functionality and simplifies design while ensuring reliable operation.
Designed specifically for power control, ensuring optimal performance in high-power applications.
Surface mount capability allows for easy integration into modern circuit designs, reducing space and improving assembly efficiency.
A low maximum VCEsat value ensures minimal power loss during operation, contributing to greater energy efficiency.
The rectangular shape provides efficient space utilization on PCB layouts, facilitating compact designs.
Gull wing terminals offer reliable solder connections, enhancing the durability of the component in circuit applications.
A slow turn-off time is effective in applications where gradual energy discharge is desired, helping reduce electromagnetic interference.
With only two terminals, this IGBT simplifies circuitry, making it an efficient choice for straightforward designs.
Able to handle up to 150 W of power dissipation, this IGBT supports high-performance applications without overheating.
The small outline package style optimizes space and supports compact electronic designs, enhancing flexibility in layout.
High operating temperature rating allows for robust performance in demanding environments, increasing reliability.
A high collector-emitter voltage rating enables this IGBT to be used in applications with substantial voltage levels.
Silicon material provides excellent thermal and electrical conductivity, ensuring reliable performance in various conditions.
A maximum gate-emitter voltage of 16 V allows for flexible drive requirements, enhancing compatibility with various control circuits.
The capability to operate at low temperatures increases versatility, allowing use in a wide range of environments.
Handling up to 25 A of collector current makes this IGBT suitable for high-power applications, ensuring efficiency and performance.
A low threshold voltage improves switching efficiency and reduces power losses, making this IGBT a smart choice for power applications.
Matte tin terminal finish ensures good solderability and corrosion resistance, enhancing the component's longevity.
Single terminal position simplifies the design and assembly process, making the product user-friendly.
Collector connection allows for effective heat dissipation, improving the overall performance of the device.
A peak reflow temperature of 245 °C ensures compatibility with modern soldering processes, enhancing manufacturing efficiency.
Moderate turn-on time allows for controlled switching, making the IGBT suitable for applications where timing is crucial.
Insulated Gate Bipolar Transistors (IGBT) STGB19N40LZ attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics
Additional Features:
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JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
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Peak Reflow Temperature (C):
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STGB19N40LZ Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
BAV99
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMBJ18CA
Telefunken Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RC0402FR-0710KL
Yageo
Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.
NC7WZ07P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
LAN8720A-CP-TR
Microchip Technology
LAN8720A-CP-TR by Microchip: Ethernet transceiver with 100 Mbps data rate, operates at 3.3V, and consumes 54mA max supply current. Ideal for network interfaces in commercial applications due to its small size (4x4mm) and low power consumption.
STM32F401CDY6TR
STMicroelectronics
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
Onsemi
The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.
1N4148WS
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20+
Analog Devices
DS18B20+ by Analog Devices is a 12-bit temperature sensor with 3.3/5V supply, -55 to 125°C range, and ±0.50°C accuracy. It features a 1-Wire interface for digital output and is commonly used in applications requiring precise temperature monitoring in various industries.
1N4148
Kec
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Non Repetitive Peak Forward Current: 2 A; Config: SINGLE; Maximum Operating Temperature: 200 Cel;
ULN2803A
Texas Instruments
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
2N7002
Nte Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;
LM317T
Motorola
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;
BSS123-7-F
Diodes Incorporated
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
LM358DR2G
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
NE555DR
NE555DR by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating voltage of 5V, and power supplies ranging from 5-15V. It is a versatile component for pulse generation applications due to its small outline package and commercial temperature grade suitability.
Goodwork Semiconductor
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;
LM358N
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SKM200GB12E4
Semikron International
SKM200GB12E4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 2.05V, IC of 313A, and toff of 597ns. Ideal for POWER CONTROL applications, it operates b/w -40 to 175°C with a VCEmax of 1200V.
IXGA20N120A3
Littelfuse
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 40 A; Package Shape: RECTANGULAR;
IGB30N60H3ATMA1
Infineon Technologies
IGB30N60H3ATMA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 60A. It has a nominal turn-off time of 262ns and turn-on time of 40ns, making it ideal for power control applications. This surface-mount transistor comes in a small outline package with GULL WING terminals.
FS215R04A1E3DBOMA1
Infineon's FS215R04A1E3DBOMA1 is an N-Channel IGBT with VCEsat of 1.7V, toff of 340ns, and Pmax of 715W. Ideal for high-power applications requiring a max VCE of 400V, such as motor drives and renewable energy systems. Operating temperatures range from -40°C to 150°C.
IXGH60N60C3D1
IXGH60N60C3D1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.5V and a max collector current (IC) of 75A. It is commonly used in power control applications due to its high power dissipation of 380W and max operating temperature of 150°C.
RGTV60TS65DGC11
ROHM
ROHM's RGTV60TS65DGC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 60A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and fast turn-off time of 201ns. Suitable for use in various electronic devices requiring efficient power management.
IXGR16N170AH1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Collector Current (IC): 16 A; No. of Elements: 1;
FGL40N120ANDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 64 A; Nominal Turn Off Time (toff): 165 ns;
FGH30S130P
FGH30S130P by Onsemi is an N-CHANNEL IGBT with 1300V VCE, 60A IC, and 500W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and operates up to 175°C. With a fast tf of 210ns and toff of 905ns, this IGBT offers efficient switching performance in a rectangular package with through-hole terminals.
FF1000R17IE4DB2BOSA1
Infineon's FF1000R17IE4DB2BOSA1 IGBT features N-CHANNEL configuration with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.45V and max IC of 1390A. Operates in temp range -40 to 150°C, offering high power dissipation up to 6250W.
SGB02N120ATMA1
SGB02N120ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 6.2A. It has a nominal turn-off time of 375ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
STGD25N40LZAG
STGD25N40LZAG by STMicroelectronics is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.25V, collector-emitter voltage of 435V, and can handle a max current of 25A. Operating temperature ranges from -55 to 175°C.
SGP10N60RUFDTU
SGP10N60RUFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 16A IC, and 75W Pd. Ideal for MOTOR CONTROL applications due to its single configuration with built-in diode. Features fast switching times: ton of 49ns and tf of 220ns.
IRG4BC40WLPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; Maximum Fall Time (tf): 110 ns;
IXGH6N170A
IXGH6N170A by Littelfuse is an N-CHANNEL IGBT transistor with 1700V max collector-emitter voltage, 75W power dissipation, and 65ns fall time. Ideal for power control applications due to its single configuration and through-hole terminal form.
STGW40H60DLFB
STGW40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 283W max power dissipation. It operates up to 175°C making it suitable for high-power applications like motor drives and inverters.
IKW75N60T
IKW75N60T by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a power dissipation of 428W and turn-off time of 401ns, making it ideal for power control applications requiring high efficiency and fast switching capabilities.
IKW30N60TFKSA1
IKW30N60TFKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a 600V max collector-emitter voltage and 60A max collector current. It has a nominal turn-off time of 382ns and nominal turn-on time of 50ns, making it ideal for power control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, suitable for high-power applications up to 175°C operating temperature.
IRG4PH20KPBF
IRG4PH20KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 1200V and Max Power Dissipation of 24W. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 720ns and Max Fall Time of 400ns. Ideal for high-power systems requiring efficient switching capabilities.
FGH80N60FD2TU
FGH80N60FD2TU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 290W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and offers fast switching times of 74ns turn on and 100ns fall time.
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STGB14NC60KDT4
STGB14NC60KDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 25A max collector current, and 80W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 340ns.
STGB25N40LZAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 25 A; No. of Terminals: 2;
STGB20N45LZAG
STGB20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 1.25V and a max collector-emitter voltage of 475V. It is designed for automotive ignition applications, has a small outline package style, and can operate at temperatures up to 175°C.
STGB10NC60KDT4
STGB10NC60KDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 242ns turn-off time. It is used for power control applications, has a small outline package style, and operates at a max temperature of 150°C.
STGB3NC120HDT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 14 A; Package Style (Meter): SMALL OUTLINE; Transistor Application: POWER CONTROL;
STGB30H60DFB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 60 A; Transistor Application: POWER CONTROL; Peak Reflow Temperature (C): NOT SPECIFIED;
STGB30V60DF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 60 A; No. of Terminals: 2; Terminal Position: SINGLE;
STGB30M65DF2
STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.
STGB10NC60KT4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 20 A; Nominal Turn Off Time (toff): 242 ns;
STGB18N40LZT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 30 A; Nominal Turn On Time (ton): 4450 ns;
STGB7H60DF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Maximum Collector Current (IC): 14 A; No. of Terminals: 2;
STGB30V60F
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Package Style (Meter): SMALL OUTLINE;
STGB10NB40LZ
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 10 A; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
STGB10NC60KD
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel;
STGB10N60L
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-PSSO-G2;
STGB10NB40LZT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Terminal Finish: Matte Tin (Sn) - annealed;
STGB12NB60KD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 30 A; Terminal Form: GULL WING;
STGB12NB60KDT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 30 A; Nominal Turn On Time (ton): 39.5 ns;
STGB10HF60KDT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 20 A; Terminal Form: GULL WING;
STGB10N60LT4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 25 A; No. of Terminals: 2; JEDEC-95 Code: TO-263AB;
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