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A2C35S12M3-F

STMicroelectronics

A2C35S12M3-F by STMicroelectronics

A2C35S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,713 parts In-Stock

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4,713

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Vyrian

USA . 3,753 parts In-Stock

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3,753

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Anansix

USA . 2,886 parts In-Stock

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2,886

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,295 parts In-Stock

1+ parts

$1.673

100+ parts

-

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$1.505

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1,295

$1.673

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$1.505

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MKK Technologies

India . 1,192 parts In-Stock

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$3.145

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$3.145

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DigiPath Technology Company

USA . 1,192 parts In-Stock

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$3.145

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1,192

$3.145

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Native Components

USA . 171 parts In-Stock

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$5.498

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171

$5.498

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AZTECH Wire

Italy . 61 parts In-Stock

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$11.830

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61

$11.830

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Continental Prestige Electronics

USA . 14 parts In-Stock

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$38.470

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14

$38.470

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Microchip USA

USA . 2,430 parts In-Stock

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$167.555

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2,430

$167.555

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Corphita

USA . 1,901 parts In-Stock

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1,901

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Northwest PG Solutions

USA . 1,605 parts In-Stock

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$5.388

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1,605

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$5.388

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Perfect Parts

USA . 101 parts In-Stock

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101

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Parana Technologies

USA . 63 parts In-Stock

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$2.000

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63

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$2.000

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Overview

Elevate your power control solutions with the A2C35S12M3-F from STMicroelectronics, a leader in semiconductor innovation. This N-channel IGBT offers exceptional efficiency and reliability, perfectly suited for demanding applications like motor drives and renewable energy systems. With a robust design capable of handling high voltages and temperatures, you can trust its superior performance to optimize your projects, reduce energy costs, and enhance system longevity. Experience quality that empowers your next big idea!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their higher efficiency and better performance in high-voltage applications, making this product suitable for power control.

Configuration: COMPLEX

The complex configuration allows for improved switching characteristics and energy efficiency, essential for modern power electronics.

Transistor Application: POWER CONTROL

Designed specifically for power control, this IGBT can handle large current and voltage loads, ideal for various applications including automotive and industrial.

Maximum VCEsat: 2.45 V

The low VCEsat ensures minimal power loss during operation, leading to higher overall efficiency in power management systems.

Package Shape: RECTANGULAR

The rectangular package shape allows for easier integration into compact designs, facilitating space-saving layouts in end applications.

No. of Elements: 7

Having multiple elements enhances the capability to handle larger power levels and improves thermal management within the device.

Nominal Turn Off Time (toff): 364 ns

The relatively fast turn off time aids in reducing switching losses, leading to better switching performance in applications.

No. of Terminals: 35

A higher number of terminals provides flexibility in circuit design, allowing for more complex configurations and connections.

Maximum Power Dissipation (Abs): 250 W

The high power dissipation rating allows this IGBT to handle significant loads without overheating, ideal for high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mount packages facilitate robust mounting options, ensuring stable operation even in more demanding environments.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures expands its usability in harsh environments without loss of performance.

Maximum Collector-Emitter Voltage: 1200 V

With a high voltage rating, this IGBT can be utilized in high-voltage applications, ensuring its versatility across different industries.

Transistor Element Material: SILICON

Silicon as the element material ensures good thermal conductivity and efficiency, making it a reliable choice for power control applications.

Maximum Gate-Emitter Voltage: 20 V

The robust voltage rating provides flexibility in gate drive designs, accommodating various control strategies.

Minimum Operating Temperature: -40 °C

The ability to function in low temperatures ensures reliable operation in a range of environmental conditions.

Maximum Collector Current (IC): 35 A

The high collector current rating allows this IGBT to be employed in power-intensive applications, enhancing its functionality.

Maximum Gate-Emitter Threshold Voltage: 7 V

The moderate threshold voltage ensures quick response times and compatibility with various gate drive circuits.

Terminal Position: UPPER

Upper terminal positioning simplifies connections, aiding in efficient circuit design and assembly.

Case Connection: ISOLATED

Isolated case connections help in ensuring safety and preventing unwanted interference, making it suitable for sensitive applications.

Nominal Turn On Time (ton): 145 ns

The fast turn on time improves overall switching performance, allowing for efficient control in high-frequency applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) A2C35S12M3-F attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X35

No. of Elements:

7

No. of Terminals:

35

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

364 ns

Nominal Turn On Time (ton):

145 ns

Maximum VCEsat:

2.45 V

Trade Compliance

A2C35S12M3-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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