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A2C35S12M3

STMicroelectronics

A2C35S12M3 by STMicroelectronics

A2C35S12M3 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency power management in industrial systems.

Median Price

$54.450

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 8 parts In-Stock

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-

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$54.450

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$53.900

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8

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$54.450

$53.900

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Distributors (In-Stock)

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Vyrian

USA . 2,286 parts In-Stock

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Digiode

USA . 977 parts In-Stock

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Anansix

USA . 390 parts In-Stock

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390

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Distributors (Availability)

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Native Components

USA . 42 parts In-Stock

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$0.332

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$0.319

42

$0.332

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$0.319

Northwest PG Solutions

USA . 2,324 parts In-Stock

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$0.365

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$0.322

2,324

$0.365

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$0.322

IDEA Electronic Components Group

UK . 1,105 parts In-Stock

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$1.103

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$0.993

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1,105

$1.103

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$0.993

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MKK Technologies

India . 1,169 parts In-Stock

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$2.074

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$2.074

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DigiPath Technology Company

USA . 1,169 parts In-Stock

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$2.074

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1,169

$2.074

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AZTECH Wire

Italy . 580 parts In-Stock

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$8.120

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Microchip USA

USA . 8,069 parts In-Stock

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$165.209

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Component Stockers USA

USA . 91 parts In-Stock

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$680.550

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Corphita

USA . 1,337 parts In-Stock

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Parana Technologies

USA . 525 parts In-Stock

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$1.319

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Perfect Parts

USA . 302 parts In-Stock

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Overview

Elevate your power management solutions with the A2C35S12M3 from STMicroelectronics, a leader in semiconductor innovation. This N-channel IGBT is engineered for optimal performance in demanding applications, delivering remarkable efficiency and reliability. With its robust design and built-in diode, it ensures seamless power control while supporting high voltages up to 1200V. Trust in STMicroelectronics' dedication to quality and performance, and unlock superior capabilities for your projects!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs provide better performance in terms of switching speed and on-state resistance, making them suitable for high-efficiency power control applications.

Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

The 6-element bridge configuration allows for versatile circuit designs and provides built-in protection against reverse currents, enhancing reliability.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT ensures efficient management of power flow in various electronic systems.

Maximum VCEsat: 2.45 V

A low VCEsat value reduces power loss during operation, which enhances energy efficiency and helps in managing thermal performance.

Package Shape: RECTANGULAR

The rectangular package design allows for better integration into circuits, providing a compact solution for power electronics.

No. of Elements: 6

Having multiple elements supports higher power ratings and flexibility in circuit design, enabling complex applications.

Nominal Turn Off Time (toff): 364 ns

A relatively fast turn off time improves switching speeds, which is essential for high-frequency applications and reduces switching losses.

No. of Terminals: 35

A higher number of terminals allows for versatile connections, ensuring compatibility with various circuit configurations.

Maximum Power Dissipation (Abs): 250 W

With a maximum power dissipation of 250 W, this product can handle significant power levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure mounting options, ensuring stability and ease of heat dissipation for improved thermal management.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this IGBT to function effectively in harsh environments, ensuring reliability and longevity.

Maximum Collector-Emitter Voltage: 1200 V

A high voltage rating enables this IGBT to be used in high-voltage applications, expanding its usability in various power systems.

Transistor Element Material: SILICON

Silicon as the base material ensures good electrical properties and performance, making it a standard choice for power transistors.

Maximum Gate-Emitter Voltage: 20 V

A maximum gate-emitter voltage of 20 V allows for optimal driving conditions and ensures compatibility with standard gate drive circuits.

Minimum Operating Temperature: -40 °C

A wide operating temperature range ensures reliable performance even in extreme conditions, making it suitable for various indoor and outdoor applications.

Maximum Collector Current (IC): 35 A

With a collector current rating of 35 A, this IGBT can handle substantial load currents, making it a strong choice for industrial and commercial applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

A threshold voltage of 7 V allows for efficient switching with standard driver circuits, facilitating easier integration into existing designs.

Terminal Position: UPPER

Upper terminal positioning can simplify PCB design and assembly, streamlining overall circuit layout.

Nominal Turn On Time (ton): 170 ns

A quick turn on time improves overall circuit response and makes this IGBT adept for applications requiring fast switching.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) A2C35S12M3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X35

No. of Elements:

6

No. of Terminals:

35

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

364 ns

Nominal Turn On Time (ton):

170 ns

Maximum VCEsat:

2.45 V

Trade Compliance

A2C35S12M3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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