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STGI25N36LZAG

STMicroelectronics

STGI25N36LZAG by STMicroelectronics

STGI25N36LZAG from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 1.25V, supports up to 25A collector current, and operates b/w -55 °C to 175 °C. Its built-in TVS diode enhances reliability in harsh environments.

Median Price

$1.049

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 111,396 parts In-Stock

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$1.049

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$0.999

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111,396

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$1.049

$0.999

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Vyrian

USA . 5,198 parts In-Stock

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5,198

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Digiode

USA . 3,376 parts In-Stock

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3,376

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Anansix

USA . 2,409 parts In-Stock

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2,409

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,162 parts In-Stock

1+ parts

$1.808

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-

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$1.627

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1,162

$1.808

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$1.627

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MKK Technologies

India . 139 parts In-Stock

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$3.399

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139

$3.399

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DigiPath Technology Company

USA . 139 parts In-Stock

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$3.399

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139

$3.399

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Microchip USA

USA . 9,089 parts In-Stock

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$7.737

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$7.737

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AZTECH Wire

Italy . 775 parts In-Stock

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$18.420

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775

$18.420

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Parana Technologies

USA . 2,036 parts In-Stock

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$2.162

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2,036

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Corphita

USA . 440 parts In-Stock

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Overview

Unlock the power of reliable performance with STMicroelectronics' STGI25N36LZAG, an exceptional Insulated Gate Bipolar Transistor (IGBT) designed for automotive ignition applications. Renowned for its superior quality and robust engineering, STMicroelectronics delivers a product that ensures efficiency and durability under demanding conditions. With built-in protection features and high operational thresholds, this IGBT is your ideal partner for maximizing energy management and enhancing system reliability. Choose STMicroelectronics for unmatched innovation and peace of mind!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Utilizing a plastic/epoxy body material enhances durability and ensures reliable performance under various environmental conditions.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration provides efficient electron mobility, which is beneficial for faster switching and better overall performance.

Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

The built-in transient voltage suppressor (TVS) diode and resistor enhance protection and stability, especially in automotive applications.

Transistor Application: AUTOMOTIVE IGNITION

Designed specifically for automotive ignition, this IGBT ensures reliability and performance in critical ignition systems.

Maximum VCEsat: 1.25 V

A low collector-emitter saturation voltage minimizes power losses, leading to improved efficiency in the application.

Package Shape: RECTANGULAR

The rectangular package shape allows efficient space utilization on the PCB, making it suitable for compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides mechanical stability and makes it easier to work with in assembly processes.

Nominal Turn Off Time (toff): 14500 ns

A relatively long turn-off time provides a smooth switching experience, critical for minimizing noise in automotive circuits.

No. of Terminals: 3

With three terminals, this IGBT offers flexibility in circuit design and integration with other components.

Maximum Power Dissipation (Abs): 150 W

A high power dissipation capability allows the device to manage thermal loads effectively, ensuring operational stability.

Package Style (Meter): IN-LINE

The in-line package style is suited for streamlined assembly processes and helps maintain a compact design.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature enhances reliability in extreme automotive environments.

Maximum Collector-Emitter Voltage: 385 V

This high voltage rating makes the IGBT suitable for high-voltage applications, ensuring safety and performance.

Transistor Element Material: SILICON

Silicon-based transistors provide reliable operation and are well-understood in the industry for performance characteristics.

Maximum Gate-Emitter Voltage: 16 V

A maximum gate-emitter voltage of 16 V allows compatibility with a wide range of control circuits and drivers.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature enables reliable operation in harsh environments typically found in automotive applications.

Maximum Collector Current (IC): 25 A

With a high maximum collector current rating, this IGBT can handle substantial loads, ensuring robust performance.

Maximum Gate-Emitter Threshold Voltage: 2.1 V

A low gate-emitter threshold voltage facilitates easier control and reduces power losses during operation.

Terminal Position: SINGLE

The single terminal position helps simplify circuit design and makes the part easier to mount in various applications.

Case Connection: COLLECTOR

With collector case connection, this IGBT is positioned for optimal thermal management and current flow.

Nominal Turn On Time (ton): 4560 ns

A rapid turn-on time facilitates high-speed switching, making this IGBT suitable for applications requiring quick responses.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that this product meets rigorous automotive reliability and quality standards.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGI25N36LZAG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

385 V

Maximum Gate-Emitter Threshold Voltage:

2.1 V

Maximum Gate-Emitter Voltage:

16 V

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

14500 ns

Nominal Turn On Time (ton):

4560 ns

Maximum VCEsat:

1.25 V

Trade Compliance

STGI25N36LZAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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