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A1P35S12M3-F

STMicroelectronics

A1P35S12M3-F by STMicroelectronics

A1P35S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 2,498 parts In-Stock

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2,498

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Digiode

USA . 2,255 parts In-Stock

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Anansix

USA . 743 parts In-Stock

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743

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Flip Electronics

USA . 30 parts In-Stock

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30

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IDEA Electronic Components Group

UK . 976 parts In-Stock

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$0.825

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$0.743

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976

$0.825

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$0.743

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MKK Technologies

India . 207 parts In-Stock

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$1.552

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$1.552

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DigiPath Technology Company

USA . 207 parts In-Stock

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$1.552

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$1.552

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Native Components

USA . 110 parts In-Stock

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$11.785

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$11.785

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AZTECH Wire

Italy . 160 parts In-Stock

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$12.860

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$12.860

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Northwest PG Solutions

USA . 2,089 parts In-Stock

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$12.963

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$11.667

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$12.963

$11.667

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Component Stockers USA

USA . 1 parts In-Stock

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$51.000

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1

$51.000

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Microchip USA

USA . 7,399 parts In-Stock

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$122.659

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$122.659

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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Corphita

USA . 3,503 parts In-Stock

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Parana Technologies

USA . 1,235 parts In-Stock

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$0.987

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$0.987

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Perfect Parts

USA . 121 parts In-Stock

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Eastek

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Overview

Unlock unparalleled power control with the A1P35S12M3-F from STMicroelectronics, a leader in semiconductor innovation. Designed for demanding applications, this N-Channel IGBT ensures exceptional efficiency and reliability, even in extreme conditions. With a robust design that handles high voltage and temperature, it’s perfect for industrial and energy solutions. Elevate your projects with a component that combines quality, performance, and value, empowering you to achieve operational excellence.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer lower on-resistance and higher efficiency, making them ideal for high-power applications.

Configuration: COMPLEX

Complex configurations allow for versatile circuit designs and improved performance in power applications.

Transistor Application: POWER CONTROL

Designed specifically for power control, this IGBT is well-suited for applications requiring high voltage and current handling.

Maximum VCEsat: 2.45 V

A low saturation voltage helps to minimize power loss during operation, improving overall efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient heat dissipation and easy integration into various circuit layouts.

No. of Elements: 6

Having multiple elements provides redundancy and enhances the capability to handle high currents effectively.

Nominal Turn Off Time (toff): 398 ns

A relatively short turn-off time enables faster switching capabilities, beneficial for high-frequency applications.

No. of Terminals: 22

The 22 terminals offer a flexible connection layout, which aids in complex circuit designs and ensures reliable performance.

Maximum Power Dissipation (Abs): 250 W

With a high power dissipation threshold, this IGBT can handle substantial loads, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for robust mechanical attachment and effective thermal management in various environments.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability and performance under extreme conditions.

Maximum Collector-Emitter Voltage: 1200 V

This high voltage rating allows for use in a wide range of industrial and power electronics applications.

Transistor Element Material: SILICON

Silicon is the industry-standard material for power devices, offering excellent performance characteristics.

Maximum Gate-Emitter Voltage: 20 V

The ability to handle a high gate-emitter voltage allows for flexibility in driving circuits.

Minimum Operating Temperature: -40 °C

A wide operating temperature range ensures adaptability in diverse environmental conditions.

Maximum Collector Current (IC): 35 A

With a maximum collector current of 35 A, this IGBT can manage significant power levels effectively.

Maximum Gate-Emitter Threshold Voltage: 7 V

A moderate threshold voltage aids in achieving reliable turn-on characteristics, making it easier to drive.

Terminal Position: UPPER

Upper terminal positioning facilitates existing circuit integration and access during installation.

Case Connection: ISOLATED

An isolated case connection enhances safety and prevents short circuits in complex circuits.

Nominal Turn On Time (ton): 142 ns

Fast turn-on times improve the overall switching performance, making it ideal for high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) A1P35S12M3-F attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X22

No. of Elements:

6

No. of Terminals:

22

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

398 ns

Nominal Turn On Time (ton):

142 ns

Maximum VCEsat:

2.45 V

Trade Compliance

A1P35S12M3-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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