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2MBI200UD-120

Fuji Electric

2MBI200UD-120 by Fuji Electric

Fuji Electric's 2MBI200UD-120 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 300A, and turn off time of 370ns. Ideal for power control applications due to its fast switching capabilities and high voltage handling.

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AZTECH Wire

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Argo Parts USA

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Glotronic Ltd.

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Overview

Unleash the power of innovation with the Fuji Electric 2MBI200UD-120 Insulated Gate Bipolar Transistor. This N-CHANNEL transistor boasts a SERIES CONNECTED, CENTER TAP design with 2 ELEMENTS and BUILT-IN DIODE for efficient POWER CONTROL applications. With a maximum Collector-Emitter Voltage of 1200V and a Collector Current of 300A, this transistor offers unmatched performance and reliability. Trust Fuji Electric's renowned quality and expertise to elevate your projects to new heights. Experience the difference with the 2MBI200UD-120 and unlock endless possibilities in the world of electronics.

Feature Benefit Bullets

Terminal Placement: RADIAL

Radial terminal placement allows for easy and secure installation in various circuits.

Shape (Package): DISK PACKAGE

Disk package shape offers a compact and durable design, ideal for space-constrained applications.

Resistance: 0.065 ohm

Low resistance value ensures efficient current flow and minimal power loss.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and ensures proper circuit setup.

Operating Voltage: 30 V

With an operating voltage of 30V, this product can safely handle moderate electrical loads.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for reliable performance in various environmental conditions.

Mounting Type: THROUGH HOLE MOUNT

Through hole mounting provides a sturdy and secure connection to the circuit board.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) 2MBI200UD-120 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fuji Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

370 ns

Nominal Turn On Time (ton):

360 ns

Trade Compliance

2MBI200UD-120 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fuji Electric

Fuji Electric has been supporting industrial and social infrastructure by extensively developing power semiconductor and power electronics solutions as core technologies. In addition, we are now working to realize a responsible and sustainable society through our energy and environment business by offering renewable energy solutions, as well as power stabilization, energy saving, and automation solutions, in order to help achieve the worldwide goal of a decarbonized society. Fuji Electric’s strength is its ability to independently develop and manufacture power semiconductors as key energy-saving devices. We utilize these devices in our power electronics equipment and offer customers comprehensive engineering services that integrate these products. By leveraging our strengths, we are contributing to the realization of the worldwide goal of a decarbonized society.

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