Loading...

2MBI1000VXB-170E-50

Fuji Electric

2MBI1000VXB-170E-50 by Fuji Electric

Insulated Gate Bipolar Transistors; Maximum Collector Current (IC): 1400 A; Maximum Gate-Emitter Voltage: 20 V; No. of Elements: 1; Maximum VCEsat: 2.55 V; Maximum Collector-Emitter Voltage: 1700 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Vyrian

USA . 312 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

312

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 402 parts In-Stock

1+ parts

$1.190

100+ parts

-

1k+ parts

-

10k+ parts

-

402

$1.190

-

-

-

AZTECH Wire

Italy . 312 parts In-Stock

1+ parts

$9.964

100+ parts

-

1k+ parts

-

10k+ parts

-

312

$9.964

-

-

-

Continental Prestige Electronics

USA . 5,331 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,331

-

-

-

-

Argo Parts USA

USA . 3,729 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,729

-

-

-

-

Perfect Parts

USA . 1,245 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,245

-

-

-

-

GreenTree Electronics

Israel . 232 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

232

-

-

-

-

Bastille Electronics

Australia . 34 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

34

-

-

-

-

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) 2MBI1000VXB-170E-50 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fuji Electric

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Maximum Gate-Emitter Voltage:

20 V

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Sub-Category:

Insulated Gate BIP Transistors

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum VCEsat:

2.55 V

Trade Compliance

2MBI1000VXB-170E-50 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fuji Electric

Fuji Electric has been supporting industrial and social infrastructure by extensively developing power semiconductor and power electronics solutions as core technologies. In addition, we are now working to realize a responsible and sustainable society through our energy and environment business by offering renewable energy solutions, as well as power stabilization, energy saving, and automation solutions, in order to help achieve the worldwide goal of a decarbonized society. Fuji Electric’s strength is its ability to independently develop and manufacture power semiconductors as key energy-saving devices. We utilize these devices in our power electronics equipment and offer customers comprehensive engineering services that integrate these products. By leveraging our strengths, we are contributing to the realization of the worldwide goal of a decarbonized society.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 13