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2MBI450VE-120-50

Fuji Electric

2MBI450VE-120-50 by Fuji Electric

Fuji Electric 2MBI450VE-120-50 is a N-CHANNEL IGBT with 2 elements, built-in diode, VCEsat of 2.6V, and IC of 520A. Ideal for motor control applications due to its high power dissipation of 3350W and operating temperature up to 150°C. Features fast turn-off time (toff) of 800ns and turn-on time (ton) of 600ns for efficient performance.

Median Price

$209.224

Lifecycle Status

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3

In-Stock Inventory

1k+

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Ozdisan Elektronik

Türkiye . 24 parts In-Stock

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$209.224

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Vyrian

USA . 5,466 parts In-Stock

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Nova Conductors

Japan . 79 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,426 parts In-Stock

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$1.265

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AZTECH Wire

Italy . 453 parts In-Stock

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$16.865

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Argo Parts USA

USA . 4,551 parts In-Stock

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Continental Prestige Electronics

USA . 2,356 parts In-Stock

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Perfect Parts

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Aranea Global

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Overview

Experience exceptional performance and reliability with the 2MBI450VE-120-50 by Fuji Electric. As a leading manufacturer in the industry, Fuji Electric delivers cutting-edge Insulated Gate Bipolar Transistors (IGBT) that are perfect for motor control applications. With its advanced features and high-quality construction, this N-CHANNEL transistor offers unparalleled value to customers seeking efficient power management solutions. Trust Fuji Electric to provide you with the best in class components for your projects, ensuring optimal performance and longevity.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower on-state voltage drop and higher switching speeds, making them suitable for high power applications such as motor control.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control applications, providing efficient and reliable performance in controlling the speed and direction of motors.

Maximum VCEsat: 2.6 V

Low VCEsat helps in reducing power losses and improving efficiency in switching operations.

Maximum Power Dissipation (Abs): 3350 W

High power dissipation capability allows the IGBT to handle large amounts of power without overheating, suitable for high-power motor control applications.

Maximum Collector-Emitter Voltage: 1200 V

High voltage rating enables the IGBT to withstand high voltage spikes and surges, enhancing the reliability of the motor control system.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) 2MBI450VE-120-50 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fuji Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

800 ns

Nominal Turn On Time (ton):

600 ns

Maximum VCEsat:

2.6 V

Trade Compliance

2MBI450VE-120-50 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fuji Electric

Fuji Electric has been supporting industrial and social infrastructure by extensively developing power semiconductor and power electronics solutions as core technologies. In addition, we are now working to realize a responsible and sustainable society through our energy and environment business by offering renewable energy solutions, as well as power stabilization, energy saving, and automation solutions, in order to help achieve the worldwide goal of a decarbonized society. Fuji Electric’s strength is its ability to independently develop and manufacture power semiconductors as key energy-saving devices. We utilize these devices in our power electronics equipment and offer customers comprehensive engineering services that integrate these products. By leveraging our strengths, we are contributing to the realization of the worldwide goal of a decarbonized society.

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