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STGW75H65DFB2-4

STMicroelectronics

STGW75H65DFB2-4 by STMicroelectronics

STGW75H65DFB2-4 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 115A, and Pmax of 357W. Ideal for power control applications due to its fast turn-off time (toff) of 231ns and high collector-emitter voltage of 650V. Package style is flange mount with through-hole terminals.

Median Price

$4.510

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,800 parts In-Stock

1+ parts

$3.532

100+ parts

-

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1,800

$3.532

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Chip1Stop

Japan . 1,800 parts In-Stock

1+ parts

$5.350

100+ parts

$4.730

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-

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1,800

$5.350

$4.730

-

-

DigiKey

USA . 48 parts In-Stock

1+ parts

$8.230

100+ parts

$4.787

1k+ parts

$3.557

10k+ parts

-

48

$8.230

$4.787

$3.557

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EBV Elektronik

Germany . 3,360 parts In-Stock

1+ parts

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3,360

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Verical

USA . 1,800 parts In-Stock

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1,800

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Avnet

USA . 1,170 parts In-Stock

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1,170

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Future Electronics

Canada . 600 parts In-Stock

1+ parts

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100+ parts

$3.670

1k+ parts

$3.540

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600

-

$3.670

$3.540

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 715 parts In-Stock

1+ parts

$5.082

100+ parts

-

1k+ parts

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715

$5.082

-

-

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TME

Poland . 36 parts In-Stock

1+ parts

$6.410

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36

$6.410

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Vyrian

USA . 3,950 parts In-Stock

1+ parts

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3,950

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Anansix

USA . 2,816 parts In-Stock

1+ parts

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2,816

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IBS Electronics

USA . 600 parts In-Stock

1+ parts

-

100+ parts

$4.825

1k+ parts

$4.642

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600

-

$4.825

$4.642

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

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50

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IDEA Electronic Components Group

UK . 1,305 parts In-Stock

1+ parts

$1.206

100+ parts

-

1k+ parts

$1.086

10k+ parts

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1,305

$1.206

-

$1.086

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MKK Technologies

India . 751 parts In-Stock

1+ parts

$2.268

100+ parts

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751

$2.268

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DigiPath Technology Company

USA . 751 parts In-Stock

1+ parts

$2.268

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751

$2.268

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Corphita

USA . 4,739 parts In-Stock

1+ parts

$4.815

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4,739

$4.815

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Continental Prestige Electronics

USA . 5 parts In-Stock

1+ parts

$7.270

100+ parts

$4.750

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5

$7.270

$4.750

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Ampacity Inc.

Singapore . 996 parts In-Stock

1+ parts

$7.420

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996

$7.420

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Microchip USA

USA . 2,621 parts In-Stock

1+ parts

$23.100

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2,621

$23.100

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Netroflash

USA . 2,000 parts In-Stock

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2,000

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Eastek

USA . 1,770 parts In-Stock

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1,770

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Parana Technologies

USA . 1,609 parts In-Stock

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$1.442

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1,609

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$1.442

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Authorized Procurement Solutions

USA . 600 parts In-Stock

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600

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Overview

Enhance your power control applications with the STGW75H65DFB2-4 Insulated Gate Bipolar Transistor by STMicroelectronics. With a maximum VCEsat of 2V and a maximum operating temperature of 175°C, this N-channel transistor offers superior performance and reliability. Its single configuration with a built-in diode simplifies installation, while the high maximum collector-emitter voltage of 650V ensures robust operation. Trust in STMicroelectronics' reputation for quality and innovation, and experience the value and benefits that the STGW75H65DFB2-4 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the internal components, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and faster switching speeds compared to P-channel, enhancing efficiency.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for easy and efficient flyback diode protection, saving space and simplifying circuit design.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimized performance and reliability in such operations.

Maximum VCEsat: 2 V

Low VCEsat reduces power dissipation and improves efficiency in high-power applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various systems and applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, ensuring stable operation in demanding environments.

Nominal Turn Off Time (toff): 231 ns

Fast turn-off time enables quick switching and control in power applications, enhancing performance and efficiency.

No. of Terminals: 4

Having 4 terminals allows for versatile connectivity options and configurations in different circuit designs.

Maximum Power Dissipation (Abs): 357 W

High power dissipation capability allows for handling large amounts of power without overheating or damage.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides mechanical stability and thermal management, ensuring long-term reliability in various applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range makes the product suitable for use in challenging environments with elevated temperatures.

Maximum Collector-Emitter Voltage: 650 V

High collector-emitter voltage rating allows for safe operation in high-voltage applications, ensuring reliability and safety.

Transistor Element Material: SILICON

Silicon material offers excellent performance characteristics such as high conductivity and reliability, making the product a high-quality choice.

Maximum Gate-Emitter Voltage: 20 V

Sufficient gate-emitter voltage rating ensures proper control and operation of the IGBT, enhancing overall performance.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for reliable operation even in harsh cold environments, increasing the product's versatility.

Maximum Collector Current (IC): 115 A

High collector current rating enables the IGBT to handle large current loads, making it suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

Gate-emitter threshold voltage ensures controlled switching behavior, preventing unintended operation and improving overall reliability.

Terminal Position: SINGLE

Single terminal position simplifies installation and wiring, reducing complexity and potential errors in circuit connections.

Case Connection: COLLECTOR

Case connection to collector provides enhanced thermal management and electrical insulation, contributing to the product's reliability.

Nominal Turn On Time (ton): 42 ns

Fast turn-on time allows for quick response and switching, improving efficiency and performance in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGW75H65DFB2-4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

231 ns

Nominal Turn On Time (ton):

42 ns

Maximum VCEsat:

2 V

Trade Compliance

STGW75H65DFB2-4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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