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STGWA20HP65FB2

STMicroelectronics

STGWA20HP65FB2 by STMicroelectronics

STGWA20HP65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 40A collector current, and operates in temps from -55 °C to 175 °C. Ideal for high-performance applications like motor drives and power converters.

Median Price

$3.150

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 570 parts In-Stock

1+ parts

$3.150

100+ parts

$1.700

1k+ parts

$1.145

10k+ parts

$0.977

570

$3.150

$1.700

$1.145

$0.977

Mouser Electronics

USA . 493 parts In-Stock

1+ parts

$3.150

100+ parts

$1.150

1k+ parts

$1.120

10k+ parts

-

493

$3.150

$1.150

$1.120

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Avnet

USA . 1,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,200

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,759 parts In-Stock

1+ parts

$2.498

100+ parts

-

1k+ parts

-

10k+ parts

-

1,759

$2.498

-

-

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Vyrian

USA . 6,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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6,980

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-

-

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Anansix

USA . 2,244 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,244

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 566 parts In-Stock

1+ parts

$0.820

100+ parts

-

1k+ parts

$0.738

10k+ parts

-

566

$0.820

-

$0.738

-

MKK Technologies

India . 1,401 parts In-Stock

1+ parts

$1.541

100+ parts

-

1k+ parts

-

10k+ parts

-

1,401

$1.541

-

-

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DigiPath Technology Company

USA . 1,401 parts In-Stock

1+ parts

$1.541

100+ parts

-

1k+ parts

-

10k+ parts

-

1,401

$1.541

-

-

-

Corphita

USA . 1,772 parts In-Stock

1+ parts

$2.367

100+ parts

-

1k+ parts

-

10k+ parts

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1,772

$2.367

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-

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Component Stockers USA

USA . 455 parts In-Stock

1+ parts

$2.790

100+ parts

$1.510

1k+ parts

-

10k+ parts

-

455

$2.790

$1.510

-

-

Microchip USA

USA . 7,169 parts In-Stock

1+ parts

$18.590

100+ parts

-

1k+ parts

-

10k+ parts

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7,169

$18.590

-

-

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,000

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iodParts Technologies Inc.

India . 230 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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230

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Parana Technologies

USA . 52 parts In-Stock

1+ parts

-

100+ parts

$0.980

1k+ parts

-

10k+ parts

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52

-

$0.980

-

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Overview

Experience unmatched reliability and efficiency with the STGWA20HP65FB2 from STMicroelectronics, a leader in semiconductor innovation. Designed for optimal power control, this high-performance IGBT combines superior thermal management with robust voltage capabilities, making it perfect for industrial applications and renewable energy systems. Enhance your projects with a component that ensures durability, reduced energy loss, and exceptional performance under demanding conditions. Elevate your solutions today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent insulation and reliability, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel type allows for faster switching and higher efficiency, making it ideal for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a single configuration with a built-in diode simplifies circuit design and provides protection against reverse current.

Transistor Application: POWER CONTROL

Designed specifically for power control, this IGBT is optimized for handling high voltages and currents effectively.

Maximum VCEsat: 2.1 V

A low maximum VCEsat ensures reduced power loss, improving the overall efficiency of power electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient heat dissipation and easier integration into various circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical support and easy soldering, enhancing reliability in harsh environments.

Nominal Turn Off Time (toff): 178 ns

A quick turn-off time contributes to efficient switching performance in applications requiring rapid on-off cycles.

No. of Terminals: 3

The three terminals provide necessary connections for collector, emitter, and gate, ensuring versatility in applications.

Maximum Power Dissipation (Abs): 147 W

A high power dissipation rating allows this IGBT to handle large amounts of power, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure installation, contributing to stable performance under various operational conditions.

Maximum Operating Temperature: 175 °C

High operating temperature capability expands the range of applications, making it suitable for high-performance environments.

Maximum Collector-Emitter Voltage: 650 V

This maximum voltage rating allows for use in high-voltage applications, enhancing the versatility of the IGBT.

Transistor Element Material: SILICON

Silicon material ensures good performance and durability while maintaining cost-effectiveness in manufacturing.

Maximum Gate-Emitter Voltage: 20 V

A higher maximum gate-emitter voltage improves the robustness of the control circuit, providing design flexibility.

Minimum Operating Temperature: -55 °C

The ability to operate at low temperatures increases reliability and performance in extreme environments.

Maximum Collector Current (IC): 40 A

The high current-handling capacity allows this IGBT to support demanding applications, contributing to overall system efficiency.

Maximum Gate-Emitter Threshold Voltage: 7 V

A lower threshold voltage enhances gate control, resulting in improved operation and efficiency in switching applications.

Terminal Position: SINGLE

Single terminal positioning simplifies the design process for integration into various power management systems.

Case Connection: COLLECTOR

The collector connection allows for efficient power delivery while ensuring stable operation in a variety of circuit configurations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGWA20HP65FB2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

178 ns

Maximum VCEsat:

2.1 V

Trade Compliance

STGWA20HP65FB2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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