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FGH30S130P

Onsemi

FGH30S130P by Onsemi

FGH30S130P by Onsemi is an N-CHANNEL IGBT with 1300V VCE, 60A IC, and 500W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and operates up to 175°C. With a fast tf of 210ns and toff of 905ns, this IGBT offers efficient switching performance in a rectangular package with through-hole terminals.

Median Price

$6.695

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 30 parts In-Stock

1+ parts

$6.540

100+ parts

$4.100

1k+ parts

-

10k+ parts

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30

$6.540

$4.100

-

-

Mouser Electronics

USA . 871 parts In-Stock

1+ parts

$6.650

100+ parts

$4.750

1k+ parts

$4.560

10k+ parts

$4.550

871

$6.650

$4.750

$4.560

$4.550

Arrow

USA . 213 parts In-Stock

1+ parts

$6.695

100+ parts

$5.315

1k+ parts

$4.718

10k+ parts

-

213

$6.695

$5.315

$4.718

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DigiKey

USA . 4 parts In-Stock

1+ parts

$8.050

100+ parts

-

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4

$8.050

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Chip1Stop

Japan . 183 parts In-Stock

1+ parts

$9.030

100+ parts

$4.540

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-

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183

$9.030

$4.540

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Element14

Singapore . 314 parts In-Stock

1+ parts

$523.040

100+ parts

$350.190

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-

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314

$523.040

$350.190

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Verical

USA . 212 parts In-Stock

1+ parts

-

100+ parts

$5.323

1k+ parts

$4.724

10k+ parts

-

212

-

$5.323

$4.724

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$4.545

100+ parts

-

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-

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100

$4.545

-

-

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Digiode

USA . 1,216 parts In-Stock

1+ parts

$6.014

100+ parts

-

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-

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1,216

$6.014

-

-

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TME

Poland . 19 parts In-Stock

1+ parts

$7.320

100+ parts

$4.700

1k+ parts

$4.400

10k+ parts

-

19

$7.320

$4.700

$4.400

-

Bristol Electronics

USA . 152 parts In-Stock

1+ parts

$9.660

100+ parts

$5.796

1k+ parts

$5.554

10k+ parts

-

152

$9.660

$5.796

$5.554

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Chip Stock

USA . 440 parts In-Stock

1+ parts

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440

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Vyrian

USA . 360 parts In-Stock

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360

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Dan-Mar Components

USA . 152 parts In-Stock

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152

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 92 parts In-Stock

1+ parts

$4.365

100+ parts

-

1k+ parts

-

10k+ parts

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92

$4.365

-

-

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Ampacity Inc.

Singapore . 335 parts In-Stock

1+ parts

$4.520

100+ parts

-

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-

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335

$4.520

-

-

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Semicontronic

India . 96 parts In-Stock

1+ parts

$4.520

100+ parts

$4.407

1k+ parts

$4.384

10k+ parts

-

96

$4.520

$4.407

$4.384

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Continental Prestige Electronics

USA . 6,835 parts In-Stock

1+ parts

$4.540

100+ parts

-

1k+ parts

-

10k+ parts

$4.449

6,835

$4.540

-

-

$4.449

Corphita

USA . 930 parts In-Stock

1+ parts

$5.697

100+ parts

-

1k+ parts

-

10k+ parts

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930

$5.697

-

-

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Allen Electronics Distributors

USA . 26 parts In-Stock

1+ parts

$8.860

100+ parts

-

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26

$8.860

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Component Stockers USA

USA . 18 parts In-Stock

1+ parts

$9.180

100+ parts

-

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18

$9.180

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

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20,000

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QUARKTWIN TECHNOLOGY LTD

USA . 19,101 parts In-Stock

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19,101

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Lixinc

USA . 11,358 parts In-Stock

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11,358

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Problanco Electronics

Mexico . 7,761 parts In-Stock

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7,761

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Perfect Parts

USA . 6,552 parts In-Stock

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6,552

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SupplyDigital Components

Austria . 5,676 parts In-Stock

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5,676

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Kepictronics

USA . 4,500 parts In-Stock

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4,500

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Microchip USA

USA . 4,463 parts In-Stock

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4,463

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Argo Parts USA

USA . 2,623 parts In-Stock

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2,623

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Supply Digital

USA . 2,557 parts In-Stock

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2,557

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TANS Electronics

Latvia . 2,313 parts In-Stock

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2,313

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Kulean Microsystems

USA . 1,981 parts In-Stock

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1,981

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UHIMA Technologies

Türkiye . 588 parts In-Stock

1+ parts

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588

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Netroflash

USA . 50 parts In-Stock

1+ parts

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100+ parts

$4.454

1k+ parts

$4.318

10k+ parts

$4.227

50

-

$4.454

$4.318

$4.227

Overview

Unlock the power of the FGH30S130P by Onsemi, a high-quality Insulated Gate Bipolar Transistor designed for power control applications. Manufactured by Onsemi, this N-CHANNEL transistor offers unparalleled reliability and performance. With a maximum collector-emitter voltage of 1300V and a maximum power dissipation of 500W, this transistor is ideal for a wide range of industrial uses. Experience seamless power control with the FGH30S130P and elevate your projects to new heights with its exceptional value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high insulation properties and mechanical strength, reducing the risk of electrical failure and physical damage.

Polarity or Channel Type: N-CHANNEL

Offers high efficiency and superior performance in power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode within the IGBT, enhancing convenience and reducing component count.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring reliable and efficient performance in controlling power flow.

Maximum Power Dissipation (Abs): 500 W

Can handle high power dissipation, making it suitable for power-intensive applications without overheating.

Maximum Operating Temperature: 175 °C

Capable of operating at high temperatures, enhancing its durability and reliability in various environments.

Maximum Collector-Emitter Voltage: 1300 V

Provides high voltage tolerance, making it suitable for applications requiring high voltage switching.

Maximum Collector Current (IC): 60 A

Supports high collector current, making it suitable for applications with high current requirements.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGH30S130P attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1300 V

Maximum Fall Time (tf):

210 ns

Maximum Gate-Emitter Threshold Voltage:

7.5 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

905 ns

Nominal Turn On Time (ton):

413 ns

Trade Compliance

FGH30S130P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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