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A2P75S12M3

STMicroelectronics

A2P75S12M3 by STMicroelectronics

A2P75S12M3 by STMicroelectronics is an N-channel IGBT designed for motor control applications. It features a max VCEsat of 2.3V, supports up to 75A collector current, and operates at temperatures from -40 °C to 150 °C. Its bridge configuration with 6 elements ensures efficient performance.

Median Price

$81.780

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7 parts In-Stock

1+ parts

$81.780

100+ parts

$65.090

1k+ parts

$64.940

10k+ parts

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7

$81.780

$65.090

$64.940

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 301 parts In-Stock

1+ parts

$77.691

100+ parts

-

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301

$77.691

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Vyrian

USA . 6,477 parts In-Stock

1+ parts

-

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6,477

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Anansix

USA . 1,861 parts In-Stock

1+ parts

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1,861

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,242 parts In-Stock

1+ parts

$0.305

100+ parts

-

1k+ parts

$0.275

10k+ parts

-

2,242

$0.305

-

$0.275

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MKK Technologies

India . 557 parts In-Stock

1+ parts

$0.574

100+ parts

-

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557

$0.574

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DigiPath Technology Company

USA . 557 parts In-Stock

1+ parts

$0.574

100+ parts

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557

$0.574

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-

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Continental Prestige Electronics

USA . 19 parts In-Stock

1+ parts

$44.760

100+ parts

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19

$44.760

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Corphita

USA . 4,738 parts In-Stock

1+ parts

$73.602

100+ parts

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4,738

$73.602

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Microchip USA

USA . 6,402 parts In-Stock

1+ parts

$193.522

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6,402

$193.522

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Native Components

USA . 145 parts In-Stock

1+ parts

$1,548.990

100+ parts

$1,518.010

1k+ parts

$1,502.520

10k+ parts

$1,487.030

145

$1,548.990

$1,518.010

$1,502.520

$1,487.030

Northwest PG Solutions

USA . 1,128 parts In-Stock

1+ parts

$1,703.889

100+ parts

-

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1,128

$1,703.889

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

1+ parts

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100+ parts

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4,500

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Parana Technologies

USA . 991 parts In-Stock

1+ parts

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100+ parts

$0.365

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991

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$0.365

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Overview

Elevate your motor control applications with the A2P75S12M3 IGBT from STMicroelectronics, a name synonymous with quality and innovation. This powerful N-channel device features a robust bridge configuration for efficient performance, ensuring reliability even in demanding environments. With excellent power dissipation and impressive thermal management capabilities, you'll experience enhanced efficiency and longevity, making it an ideal choice for industrial automation, electric vehicles, and more. Trust in ST’s heritage of excellence to drive your projects forward!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer lower on-state resistance and higher efficiency, making them ideal for applications that require effective power control.

Configuration: BRIDGE, 6 ELEMENTS

This configuration allows for efficient motor control, enabling smooth operation and precise control in various applications.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control applications, this IGBT is optimized for dynamic performance under varying load conditions.

Maximum VCEsat: 2.3 V

A low collector-emitter saturation voltage (VCEsat) enhances efficiency by minimizing power losses during operation.

Package Shape: RECTANGULAR

Rectangular packaging allows for easier mounting and thermal management, enhancing performance in confined spaces.

No. of Elements: 6

Having six elements allows for greater flexibility in configuration and improves the overall performance and reliability of the device.

Nominal Turn Off Time (toff): 517 ns

A nominal turn-off time of 517 ns contributes to faster switching capabilities, leading to improved efficiency in high-frequency applications.

No. of Terminals: 33

A higher number of terminals facilitates more complex connections and configurations, enhancing the versatility of the device in various applications.

Maximum Power Dissipation (Abs): 454.5 W

The ability to dissipate up to 454.5 W of power ensures that this IGBT can handle high-power applications without overheating, enhancing reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging improves heat dissipation and allows for secure installation, making it suitable for rugged industrial environments.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows the IGBT to perform effectively in high-temperature applications, ensuring robustness in extreme conditions.

Maximum Collector-Emitter Voltage: 1200 V

With a high maximum collector-emitter voltage rating, this IGBT can operate in high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon as the element material provides good thermal conductivity and reliability, which is crucial for high-performance power electronics.

Maximum Gate-Emitter Voltage: 20 V

A maximum gate-emitter voltage of 20 V allows for compatible drive voltages, ensuring effective control of the IGBT.

Minimum Operating Temperature: -40 °C

The capability to operate at a minimum temperature of -40 °C ensures reliability in low-temperature environments, broadening application scenarios.

Maximum Collector Current (IC): 75 A

A maximum collector current of 75 A allows this IGBT to handle high loads effectively, making it suitable for demanding applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

A relatively low gate-emitter threshold voltage enables easier turn-on, increasing the efficiency of gate driving circuits.

Terminal Position: UPPER

Upper terminal positioning can facilitate easier connection configurations in various mounting scenarios.

Case Connection: ISOLATED

Isolated case connections enhance safety and reduce the risk of short circuits, increasing the operational reliability of the device.

Nominal Turn On Time (ton): 235 ns

A nominal turn-on time of 235 ns provides fast switching capabilities, which is essential for high-speed applications and overall efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) A2P75S12M3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X33

No. of Elements:

6

No. of Terminals:

33

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

517 ns

Nominal Turn On Time (ton):

235 ns

Maximum VCEsat:

2.3 V

Trade Compliance

A2P75S12M3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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