Loading...

A2P75S12M3-F

STMicroelectronics

A2P75S12M3-F by STMicroelectronics

A2P75S12M3-F by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector current (IC) of 75A. It is commonly used for power control applications due to its high power dissipation capability and wide operating temperature range (-40°C to 150°C).

Median Price

$52.460

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

1+ parts

$52.460

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$52.460

-

-

-

Verical

USA . 1 parts In-Stock

1+ parts

$52.460

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$52.460

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 688 parts In-Stock

1+ parts

$49.837

100+ parts

-

1k+ parts

-

10k+ parts

-

688

$49.837

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$75.520

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$75.520

-

-

-

Vyrian

USA . 4,084 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,084

-

-

-

-

Anansix

USA . 1,601 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,601

-

-

-

-

VNN

France . 600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

600

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 595 parts In-Stock

1+ parts

$0.868

100+ parts

-

1k+ parts

$0.781

10k+ parts

-

595

$0.868

-

$0.781

-

MKK Technologies

India . 272 parts In-Stock

1+ parts

$1.631

100+ parts

-

1k+ parts

-

10k+ parts

-

272

$1.631

-

-

-

DigiPath Technology Company

USA . 272 parts In-Stock

1+ parts

$1.631

100+ parts

-

1k+ parts

-

10k+ parts

-

272

$1.631

-

-

-

AZTECH Wire

Italy . 460 parts In-Stock

1+ parts

$6.109

100+ parts

-

1k+ parts

-

10k+ parts

-

460

$6.109

-

-

-

Ampacity Inc.

Singapore . 1 parts In-Stock

1+ parts

$44.590

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$44.590

-

-

-

Continental Prestige Electronics

USA . 2 parts In-Stock

1+ parts

$45.370

100+ parts

-

1k+ parts

-

10k+ parts

-

2

$45.370

-

-

-

Corphita

USA . 1,384 parts In-Stock

1+ parts

$47.214

100+ parts

-

1k+ parts

-

10k+ parts

-

1,384

$47.214

-

-

-

Microchip USA

USA . 2,462 parts In-Stock

1+ parts

$190.670

100+ parts

-

1k+ parts

-

10k+ parts

-

2,462

$190.670

-

-

-

Parana Technologies

USA . 781 parts In-Stock

1+ parts

-

100+ parts

$1.037

1k+ parts

-

10k+ parts

-

781

-

$1.037

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$74.009

1k+ parts

$71.744

10k+ parts

$70.233

100

-

$74.009

$71.744

$70.233

Overview

Introducing the A2P75S12M3-F, a game-changing Insulated Gate Bipolar Transistor (IGBT) by STMicroelectronics. With its N-CHANNEL polarity and COMPLEX configuration, this transistor is designed for POWER CONTROL applications. But what sets it apart is its exceptional quality and manufacturer's expertise. STMicroelectronics delivers excellence in every product, and the A2P75S12M3-F is no exception. Its RECTANGULAR package shape, 33 terminals, and FLANGE MOUNT style make it versatile for various installations. With a maximum power dissipation of 454.4W and a maximum collector-emitter voltage of 1200V, this IGBT packs a powerful punch. Plus, its SILICON transistor element material ensures reliability and durability. Whether you're in industrial automation or renewable energy, the A2P75S12M3-F offers unrivaled value, benefits, and advantages. Don't miss out on this industry-leading solution from STMicroelectronics!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower conduction losses and higher switching speeds, making them suitable for high power applications.

Configuration: COMPLEX

Complex configuration allows for more precise control over power delivery, making this IGBT ideal for power control applications.

Maximum VCEsat: 2.3 V

Low maximum VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to higher efficiency.

Maximum Power Dissipation (Abs): 454.4 W

High maximum power dissipation allows for the handling of large amounts of power, making this IGBT suitable for high power applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability and stability even in demanding environments.

Maximum Collector-Emitter Voltage: 1200 V

High maximum collector-emitter voltage rating allows for operation in high voltage applications.

Maximum Collector Current (IC): 75 A

High maximum collector current rating allows for handling of high current loads, making this IGBT suitable for power control applications.

Nominal Turn On Time (ton): 235 ns

Fast turn on time allows for quick switching speeds, making this IGBT ideal for applications requiring high efficiency and fast response times.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) A2P75S12M3-F attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X33

No. of Elements:

6

No. of Terminals:

33

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

517 ns

Nominal Turn On Time (ton):

235 ns

Maximum VCEsat:

2.3 V

Trade Compliance

A2P75S12M3-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1