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STGWA40IH65DF

STMicroelectronics

STGWA40IH65DF by STMicroelectronics

STGWA40IH65DF from STMicroelectronics is a robust N-channel IGBT ideal for high-power applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and handles up to 80A current. Its compact design ensures efficient thermal management in demanding environments.

Median Price

$1.560

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 366 parts In-Stock

1+ parts

$4.920

100+ parts

$2.480

1k+ parts

$2.470

10k+ parts

-

366

$4.920

$2.480

$2.470

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Verical

USA . 1,490 parts In-Stock

1+ parts

-

100+ parts

$1.483

1k+ parts

-

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1,490

-

$1.483

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Avnet

USA . 540 parts In-Stock

1+ parts

-

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540

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Future Electronics

Canada . 510 parts In-Stock

1+ parts

-

100+ parts

$1.560

1k+ parts

$1.500

10k+ parts

$1.470

510

-

$1.560

$1.500

$1.470

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 29 parts In-Stock

1+ parts

$2.190

100+ parts

$2.030

1k+ parts

-

10k+ parts

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29

$2.190

$2.030

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-

Digiode

USA . 3,588 parts In-Stock

1+ parts

$4.674

100+ parts

-

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3,588

$4.674

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Vyrian

USA . 6,344 parts In-Stock

1+ parts

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6,344

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Anansix

USA . 851 parts In-Stock

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851

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,177 parts In-Stock

1+ parts

$1.299

100+ parts

-

1k+ parts

$1.169

10k+ parts

-

2,177

$1.299

-

$1.169

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MKK Technologies

India . 1,821 parts In-Stock

1+ parts

$2.443

100+ parts

-

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10k+ parts

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1,821

$2.443

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DigiPath Technology Company

USA . 1,821 parts In-Stock

1+ parts

$2.443

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1,821

$2.443

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Component Stockers USA

USA . 395 parts In-Stock

1+ parts

$4.080

100+ parts

$2.780

1k+ parts

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10k+ parts

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395

$4.080

$2.780

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Corphita

USA . 1,487 parts In-Stock

1+ parts

$4.428

100+ parts

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1,487

$4.428

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AZTECH Wire

Italy . 1,152 parts In-Stock

1+ parts

$10.310

100+ parts

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1,152

$10.310

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Microchip USA

USA . 6,333 parts In-Stock

1+ parts

$32.175

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6,333

$32.175

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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QUARKTWIN TECHNOLOGY LTD

USA . 4,043 parts In-Stock

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4,043

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Parana Technologies

USA . 1,824 parts In-Stock

1+ parts

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100+ parts

$1.553

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1,824

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$1.553

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Eastek

USA . 30 parts In-Stock

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30

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Overview

Elevate your power management solutions with the STGWA40IH65DF from STMicroelectronics, renowned for its exceptional quality and innovation. This N-channel IGBT combines high efficiency and reliability, making it ideal for various applications such as motor drives, renewable energy systems, and industrial automation. With a robust design that withstands extreme temperatures, customers benefit from superior performance and longevity, ensuring optimal operation in demanding environments. Choose STMicroelectronics for unmatched expertise and support!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protects the internal components from environmental factors.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their lower on-state resistance and better efficiency, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances switching performance and reduces component count in designs.

Maximum VCEsat: 2 V

A low saturation voltage (VCEsat) ensures minimal power loss during operation, improving overall energy efficiency.

Package Shape: RECTANGULAR

The rectangular shape can be more space-efficient on PCBs, allowing for flexible design layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides robust mechanical stability and is ideal for high-power applications.

Nominal Turn Off Time (toff): 263 ns

A fast turn-off time allows for higher switching speeds, which is critical for applications in power electronics.

No. of Terminals: 3

The three-terminal configuration simplifies connections and aids in easy integration into various circuits.

Maximum Power Dissipation (Abs): 238 W

A high power dissipation capability enables the device to operate in demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style increases the reliability of thermal management, enhancing performance in high-temperature environments.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature ensures the device can handle extreme conditions, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 650 V

A high voltage rating allows the IGBT to be used in various high-voltage applications.

Transistor Element Material: SILICON

Silicon as a material provides reliable performance and has a proven track record in transistor technologies.

Maximum Gate-Emitter Voltage: 20 V

A higher gate-emitter voltage extends the control range, resulting in improved switching performance.

Minimum Operating Temperature: -55 °C

The ability to operate at low temperatures makes this IGBT suitable for a wider range of operating environments, including extreme conditions.

Maximum Collector Current (IC): 80 A

Support for a high collector current allows the IGBT to handle significant loads, ideal for industrial and automotive applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

A suitable gate-emitter threshold voltage ensures reliable operation under varying conditions.

Terminal Position: SINGLE

Single terminal position simplifies the layout in electronic designs, making it user-friendly.

Case Connection: COLLECTOR

Collector connection design provides effective current flow and simplified thermal management.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGWA40IH65DF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

263 ns

Maximum VCEsat:

2 V

Trade Compliance

STGWA40IH65DF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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