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A2C25S12M3

STMicroelectronics

A2C25S12M3 by STMicroelectronics

A2C25S12M3 by STMicroelectronics is an N-channel IGBT designed for motor control applications. It features a max VCEsat of 2.45V, 1200V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. Its robust design includes a bridge configuration with built-in diodes.

Median Price

$42.670

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1 parts In-Stock

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$19.400

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$19.400

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Arrow

USA . 1 parts In-Stock

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$42.670

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1

$42.670

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Verical

USA . 1 parts In-Stock

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$42.670

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$42.670

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Mouser Electronics

USA . 33 parts In-Stock

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$54.800

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33

$54.800

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Distributors (In-Stock)

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Digiode

USA . 3,886 parts In-Stock

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$16.444

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3,886

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Vyrian

USA . 7,168 parts In-Stock

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Anansix

USA . 2,144 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 23 parts In-Stock

1+ parts

$1.542

100+ parts

-

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$1.388

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23

$1.542

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$1.388

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MKK Technologies

India . 1,177 parts In-Stock

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$2.899

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1,177

$2.899

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DigiPath Technology Company

USA . 1,177 parts In-Stock

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$2.899

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$2.899

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Corphita

USA . 1,750 parts In-Stock

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$15.579

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$15.579

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Component Stockers USA

USA . 35 parts In-Stock

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$32.150

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$32.150

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Native Components

USA . 446 parts In-Stock

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$51.522

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$49.462

446

$51.522

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$49.462

Northwest PG Solutions

USA . 1,861 parts In-Stock

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$56.675

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1,861

$56.675

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Microchip USA

USA . 2,227 parts In-Stock

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$154.307

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Perfect Parts

USA . 96 parts In-Stock

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Parana Technologies

USA . 44 parts In-Stock

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$1.844

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$1.844

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Eastek

USA . 18 parts In-Stock

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Overview

Elevate your motor control solutions with the A2C25S12M3 from STMicroelectronics—an industry leader renowned for its cutting-edge technology and commitment to quality. This N-channel IGBT features a robust bridge configuration, delivering reliable performance for demanding applications. With exceptional power dissipation capabilities and a wide temperature range, it ensures efficiency and longevity, empowering your designs to achieve new heights of reliability and effectiveness. Choose A2C25S12M3 for unparalleled value and innovation in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and effective thermal management, making the IGBT suitable for various demanding applications.

Polarity or Channel Type: N-CHANNEL

As an N-channel device, this IGBT provides low on-state voltage drop, improving efficiency and reducing power losses in motor control applications.

Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

The bridge configuration with built-in diodes enhances performance in AC drive applications and simplifies circuit design, providing reliable operation.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control, this IGBT offers excellent switching characteristics, making it ideal for various motor drive systems.

Maximum VCEsat: 2.45 V

A maximum VCEsat of 2.45 V contributes to lower conduction losses, enhancing efficiency in power electronic applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient heat dissipation and compact assembly in circuit boards, optimizing space usage.

No. of Elements: 6

With six elements, this IGBT can handle complex control tasks with improved performance, making it suitable for high-demand applications.

Nominal Turn Off Time (toff): 338 ns

A nominal turn-off time of 338 ns allows for quick response times in dynamic applications, contributing to better efficiency and control.

No. of Terminals: 35

Having 35 terminals provides flexibility in circuit design and facilitates integration into various types of electronic systems.

Maximum Power Dissipation (Abs): 197 W

A maximum power dissipation of 197 W allows this IGBT to operate efficiently under high loads, ensuring reliability in demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount design enhances stability during operation, making it easy to manage thermal performance and mechanical integrity.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this IGBT is reliable in high-temperature environments, making it ideal for industrial applications.

Maximum Collector-Emitter Voltage: 1200 V

A maximum collector-emitter voltage of 1200 V ensures robust performance in high-voltage environments, expanding its use cases.

Transistor Element Material: SILICON

Silicon material provides excellent electrical characteristics and thermal stability, ensuring reliable performance in a variety of applications.

Maximum Gate-Emitter Voltage: 20 V

With a maximum gate-emitter voltage of 20 V, this IGBT is versatile and compatible with a wide range of gate drive circuits.

Minimum Operating Temperature: -40 °C

Operating effectively down to -40 °C allows this IGBT to be used in extreme conditions, ensuring reliability in various climates.

Maximum Collector Current (IC): 25 A

A maximum collector current rating of 25 A makes this IGBT suitable for medium to high-power applications, enhancing its versatility.

Maximum Gate-Emitter Threshold Voltage: 7 V

The maximum gate-emitter threshold voltage of 7 V indicates good switching performance, ensuring efficient operation in control circuits.

Terminal Position: UPPER

Upper terminal positioning simplifies circuit layout and installation in compact spaces, improving design flexibility.

Nominal Turn On Time (ton): 125.2 ns

With a nominal turn-on time of 125.2 ns, this IGBT ensures rapid switching, which is beneficial for high-frequency applications.

Reference Standard: UL RECOGNIZED

Being UL recognized enhances safety assurance and adds credibility, making this IGBT a reliable component for commercial and industrial applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) A2C25S12M3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X35

No. of Elements:

6

No. of Terminals:

35

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

338 ns

Nominal Turn On Time (ton):

125.2 ns

Maximum VCEsat:

2.45 V

Trade Compliance

A2C25S12M3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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