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STGP8M120DF3

STMicroelectronics

STGP8M120DF3 by STMicroelectronics

STGP8M120DF3 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.3V, operates up to 175 °C, and supports 1200V with a collector current of 16A. Its compact design ensures efficient thermal management in various systems.

Median Price

$5.290

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 178 parts In-Stock

1+ parts

$5.290

100+ parts

$2.850

1k+ parts

$2.240

10k+ parts

-

178

$5.290

$2.850

$2.240

-

Avnet

USA . 900 parts In-Stock

1+ parts

-

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-

1k+ parts

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900

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Distributors (In-Stock)

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Digiode

USA . 3,591 parts In-Stock

1+ parts

$2.679

100+ parts

-

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3,591

$2.679

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Cyclops Electronics Ltd

UK . 10,869 parts In-Stock

1+ parts

-

100+ parts

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10,869

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-

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IBS Electronics

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$2.977

1k+ parts

$2.873

10k+ parts

$2.834

4,000

-

$2.977

$2.873

$2.834

Vyrian

USA . 2,458 parts In-Stock

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-

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2,458

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Anansix

USA . 1,460 parts In-Stock

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1,460

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,866 parts In-Stock

1+ parts

$0.696

100+ parts

-

1k+ parts

$0.627

10k+ parts

-

1,866

$0.696

-

$0.627

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MKK Technologies

India . 1,333 parts In-Stock

1+ parts

$1.310

100+ parts

-

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1,333

$1.310

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DigiPath Technology Company

USA . 1,333 parts In-Stock

1+ parts

$1.310

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-

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1,333

$1.310

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Corphita

USA . 338 parts In-Stock

1+ parts

$2.538

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338

$2.538

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AZTECH Wire

Italy . 643 parts In-Stock

1+ parts

$15.550

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643

$15.550

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Microchip USA

USA . 11,988 parts In-Stock

1+ parts

$18.720

100+ parts

$18.605

1k+ parts

$18.605

10k+ parts

$18.605

11,988

$18.720

$18.605

$18.605

$18.605

QUARKTWIN TECHNOLOGY LTD

USA . 20,684 parts In-Stock

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20,684

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Parana Technologies

USA . 1,103 parts In-Stock

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100+ parts

$0.833

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1,103

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$0.833

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Perfect Parts

USA . 804 parts In-Stock

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804

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Overview

Unlock unparalleled power control with the STGP8M120DF3 IGBT from STMicroelectronics. Renowned for quality and innovation, STMicroelectronics delivers exceptional performance and reliability in every device. This N-channel transistor, designed for superior efficiency, is perfect for applications ranging from industrial automation to renewable energy systems. With its robust design and advanced thermal capabilities, experience enhanced operational longevity and reduced energy costs, empowering your projects to soar above the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and resistance to environmental factors, making the product reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their efficiency and high-speed performance, making them suitable for power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides enhanced protection against reverse voltage, ensuring safer operation in power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control, this IGBT offers high performance in managing electricity efficiently.

Maximum VCEsat: 2.3 V

A low VCEsat allows for less power loss during operation, improving overall system efficiency.

Package Shape: RECTANGULAR

The rectangular shape is optimal for space utilization on printed circuit boards (PCBs), facilitating easier design integration.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical stability and ease of soldering, ensuring reliable connections.

Nominal Turn Off Time (toff): 356 ns

A quick turn-off time enables higher switching frequencies, enhancing the performance of the circuit.

No. of Terminals: 3

The three-terminal design simplifies integration in various applications, making it versatile for different circuit configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount style offers ease of installation and effective heat dissipation, crucial for high-power applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this IGBT can perform efficiently in demanding environments without reliability issues.

Maximum Collector-Emitter Voltage: 1200 V

A high voltage rating allows this IGBT to be used in various high-voltage applications, increasing its usability.

Transistor Element Material: SILICON

Silicon is a standard material that ensures good performance and availability, making replacements easier.

Maximum Gate-Emitter Voltage: 20 V

This voltage rating enhances flexibility in control applications, allowing for a broader range of interfacing options.

Minimum Operating Temperature: -55 °C

This low minimum temperature ensures reliable operation in extreme environments, suitable for aerospace and automotive applications.

Maximum Collector Current (IC): 16 A

A high collector current rating allows this IGBT to handle substantial loads, making it suitable for industrial applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

This threshold voltage enables easier interfacing with microcontrollers and other logic devices, ensuring compatibility.

Terminal Position: SINGLE

Single terminal positioning simplifies the design process and reduces the complexity of circuit layouts.

Case Connection: COLLECTOR

Collector case connection reduces stray inductance, improving switching performance and efficiency.

Nominal Turn On Time (ton): 28.8 ns

A short turn-on time contributes to reduced switching losses, enhancing the efficiency of high-frequency applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGP8M120DF3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

356 ns

Nominal Turn On Time (ton):

28.8 ns

Maximum VCEsat:

2.3 V

Trade Compliance

STGP8M120DF3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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