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A2C50S65M2-F

STMicroelectronics

A2C50S65M2-F by STMicroelectronics

A2C50S65M2-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 650V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a power dissipation of 208W, it's ideal for high-performance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,145 parts In-Stock

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10,145

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Digiode

USA . 750 parts In-Stock

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750

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Anansix

USA . 188 parts In-Stock

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188

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ComSIT Distribution GmbH

Germany . 14 parts In-Stock

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14

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,907 parts In-Stock

1+ parts

$1.085

100+ parts

-

1k+ parts

$0.976

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1,907

$1.085

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$0.976

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MKK Technologies

India . 1,832 parts In-Stock

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$2.040

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1,832

$2.040

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DigiPath Technology Company

USA . 1,832 parts In-Stock

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$2.040

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1,832

$2.040

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AZTECH Wire

Italy . 748 parts In-Stock

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$14.520

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748

$14.520

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Native Components

USA . 730 parts In-Stock

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$44.990

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$43.191

730

$44.990

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$43.191

Northwest PG Solutions

USA . 1,943 parts In-Stock

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$49.489

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1,943

$49.489

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Microchip USA

USA . 8,337 parts In-Stock

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$150.213

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8,337

$150.213

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Component Stockers USA

USA . 81 parts In-Stock

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$813.950

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81

$813.950

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Corphita

USA . 2,229 parts In-Stock

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2,229

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Parana Technologies

USA . 606 parts In-Stock

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$1.297

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606

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$1.297

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Perfect Parts

USA . 40 parts In-Stock

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40

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Eastek

USA . 18 parts In-Stock

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Overview

Elevate your power control solutions with the A2C50S65M2-F from STMicroelectronics, a leader in innovation and reliability. This advanced N-channel IGBT ensures exceptional efficiency and robust performance across diverse applications—from renewable energy systems to industrial automation. With its superior thermal management and impressive voltage tolerance, this device promises enhanced durability and reduced operational costs, making it an invaluable asset for any project. Experience the difference that quality engineering can make!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs offer better performance in high-speed switching applications, making them ideal for power control.

Configuration: COMPLEX

The complex configuration allows for versatile applications, enhancing efficiency in power management systems.

Transistor Application: POWER CONTROL

Designed specifically for power control, this IGBT ensures reliable operation in demanding power applications.

Maximum VCEsat: 2.3 V

A low VCEsat improves efficiency by minimizing power losses during operation, thus improving overall system performance.

Package Shape: RECTANGULAR

The rectangular shape facilitates easier mounting and integration into various system layouts.

No. of Elements: 7

Having multiple elements supports higher current carrying capabilities and improves thermal performance.

Nominal Turn Off Time (toff): 298 ns

A relatively low turn-off time allows for rapid switching, which is essential for efficient power control.

No. of Terminals: 35

The high number of terminals offers flexible connectivity options for complex circuit designs.

Maximum Power Dissipation (Abs): 208 W

This high power dissipation capability enables the device to handle demanding workloads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mounting simplifies installation and enhances thermal management in real-world applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability and performance under extreme conditions.

Maximum Collector-Emitter Voltage: 650 V

This high voltage rating allows for use in industrial applications where high voltage operation is required.

Transistor Element Material: SILICON

Silicon is well-suited for IGBT applications, providing a good balance between performance and cost.

Maximum Gate-Emitter Voltage: 20 V

A higher gate-emitter voltage supports better switching characteristics and allows for flexibility in driver design.

Minimum Operating Temperature: -40 °C

The extended operating temperature range ensures suitable performance in low-temperature environments.

Maximum Collector Current (IC): 50 A

High collector current capacity supports robust performance in power applications, enhancing overall system capacity.

Maximum Gate-Emitter Threshold Voltage: 7 V

A moderate threshold voltage allows for efficient control with minimal input requirements.

Terminal Position: UPPER

Upper terminal positioning eases access and integration in circuit boards, simplifying the design process.

Case Connection: ISOLATED

Isolated case connections reduce the risk of short circuits and enhance the safety of the device's operation.

Nominal Turn On Time (ton): 167 ns

A low turn-on time contributes to rapid switching capabilities, making this IGBT ideal for high-frequency applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) A2C50S65M2-F attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X35

No. of Elements:

7

No. of Terminals:

35

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

298 ns

Nominal Turn On Time (ton):

167 ns

Maximum VCEsat:

2.3 V

Trade Compliance

A2C50S65M2-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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